Electrical characteristics analysis and comparison between through silicon via(TSV) and through glass via(TGV)

Author(s):  
Jihye Kim ◽  
Insu Hwang ◽  
Youngwoo Kim ◽  
Heegon Kim ◽  
Joungho Kim ◽  
...  
2021 ◽  
Author(s):  
Valentin Ion ◽  
Horia Andrei ◽  
Emil Diaconu ◽  
Mihaita Nicolae Ardeleanu ◽  
Andrei Cosmin Gheorghe

2020 ◽  
Author(s):  
Bo Pu

<p>The 2.5D interposer becomes a crucial solution to realize grand bandwidth of HBM for the increasing data requirement of high performance computing (HPC) and Artificial Intelligence (AI) applications. To overcome high speed switching bottleneck caused by the large resistive and capacitive characteristics of interposer, design methods to achieve an optimized performance in a limited routing area are proposed. Unlike the conventional single through silicon via (TSV), considering the reliability, multiple TSV are used as the robust 3D interconnects for each signal path. An equivalent model to accurately describe the electrical characteristics of the multiple TSVs, and a configuration pattern strategy of TSV to mitigate crosstalk are also proposed.</p>


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