Perspective electronic circuits with ultralow energy consumption

2009 ◽  
Author(s):  
Vladimir V. Losev
Keyword(s):  
Energy Consumption ◽  
Electronic Circuits ◽  
Ultralow Energy

scholarly journals Self‐Assembly Strategy for Double Network Elastomer Nanocomposites with Ultralow Energy Consumption and Ultrahigh Wear Resistance

2020 ◽  
Vol 30 (34) ◽  
pp. 2003429 ◽  
Author(s):  
Xuan Qin ◽  
Jiadong Wang ◽  
Yanli Zhang ◽  
Zhao Wang ◽  
Sai Li ◽  
...  
Keyword(s):  
Wear Resistance ◽  
Energy Consumption ◽  
Self Assembly ◽  
Double Network ◽  
Ultralow Energy ◽  
Assembly Strategy

scholarly journals Magnon Torque Transferred into a Magnetic Insulator through an Antiferromagnetic Insulator

Nanomaterials ◽  
2021 ◽  
Vol 11 (11) ◽  
pp. 2766
Author(s):  
Zhiren Chen ◽  
Zehan Chen ◽  
Xiaotian Zhao ◽  
Baoshan Cui ◽  
Hongnan Zheng ◽  
...  
Keyword(s):  
Energy Consumption ◽  
High Efficiency ◽  
Spin Orbit ◽  
Ultralow Energy ◽  
Magnetic Insulators ◽  
Electrical Spin ◽  
Magnetic Insulator

Electrical spin-orbit torque (SOT) in magnetic insulators (MI) has been intensively studied due to its advantages in spin-orbitronic devices with ultralow energy consumption. However, the magnon torque in the MIs, which has the potential to further lower the energy consumption, still remains elusive. In this work, we demonstrate the efficient magnon torque transferred into an MI through an antiferromagnetic insulator. By fabricating a Pt/NiO/Tm3Fe5O12 heterostructure with different NiO thicknesses, we have systematically investigated the evolution of the transferred magnon torque. We show that the magnon torque efficiency transferred through the NiO into the MI can retain a high value (∼50%), which is comparable to the previous report for the magnon torque transferred into the metallic magnet. Our study manifests the feasibility of realizing the pure magnon-based spin-orbitronic devices with ultralow energy consumption and high efficiency.

Electrospun ZnSnO Nanofibers for Neuromorphic Transistors With Ultralow Energy Consumption

2019 ◽  
Vol 40 (11) ◽  
pp. 1776-1779 ◽  
Author(s):  
Yixin Zhu ◽  
Byoungchul Shin ◽  
Guoxia Liu ◽  
Fukai Shan
Keyword(s):  
Energy Consumption ◽  
Ultralow Energy

scholarly journals All-Optical Computing Based on Convolutional Neural Networks

2020 ◽  
Author(s):  
Kun Liao ◽  
Ye Chen ◽  
Zhongcheng Yu ◽  
Xiaoyong Hu ◽  
Xingyuan Wang ◽  
...  
Keyword(s):  
Neural Networks ◽  
Energy Consumption ◽  
Convolutional Neural Networks ◽  
Rapid Development ◽  
Computing Time ◽  
Optical Computing ◽  
Amplitude Control ◽  
Promising Alternative ◽  
Ultralow Energy ◽  
All Optical

Abstract The rapid development of information technology has fueled an ever-increasing demand for ultrafast and ultralow-energy-consumption computing. Existing computing instruments are pre-dominantly electronic processors. The scaling of computing speed is limited not only by data transfer between memory and processing units, but also by RC delay associated with integrated circuits. Using photons as information carriers is a promising alternative. Here, we report a strategy to realize ultrafast and ultralow-energy-consumption all-optical computing based on convolutional neural networks, leveraging entirely linear optical interactions. The device is constructed from cascaded silicon Y-shaped waveguides with side-coupled silicon waveguide segments to enable complete phase and amplitude control in each waveguide branch. The generic device concept can be used for equation solving, multifunctional logic operation, Fourier transformation, series expanding and encoding, as well as many other mathematical operations. Multiple computing functions were experimentally demonstrated to validate all-optical computing performances. The time-of-flight of light through the network structure corresponds to an ultrafast computing time of the order of several picoseconds with an ultralow energy consumption of dozens of femtojoules per bit. Our approach can be further expanded to fulfill other complex computing tasks based on non-von Neumann architectures and thus paves a new way for on-chip all-optical computing.

Implementation of frequency encoded all optical reversible logic

2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Nikhlesh Kumar Mishra ◽  
Upendra Chaurasiya ◽  
Saumya Srivastava ◽  
Shubham Shukla ◽  
Kamal K. Upadhyay
Keyword(s):  
Quantum Computing ◽  
Energy Consumption ◽  
Power Consumption ◽  
Rest Mass ◽  
Reversible Logic ◽  
Electronic Circuits ◽  
Research Areas ◽  
Fredkin Gate ◽  
Reversible Gate ◽  
All Optical

Abstract Reversible gate has been one of the emerging research areas that ensure continual process of innovation trends that explore and utilizes the resources. Due to the increasing power consumption of electronic circuits, it has been observed that quantum computing is one of its latest applications. This technology can be utilized by reducing the energy consumption by preserving the bits of information that are still useful. A photon has zero rest mass, while an electron has a nonzero rest mass. These characteristics inspired the researchers to develop an all-optical Fredkin gate. The proposed gate design overcomes the shortcomings of conventional Fredkin gates and provides better performance.

Interactions Between Al and Cr Thin Films

1976 ◽  
Vol 34 ◽  
pp. 638-639
Author(s):  
R. M. Anderson ◽  
T. M. Reith ◽  
M. J. Sullivan ◽  
E. K. Brandis
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Vacuum System ◽  
Processing Temperature ◽  
Diffusion Couples ◽  
Electronic Circuits ◽  
Intermetallic Formation ◽  
Si Substrates ◽  
Aluminum Silicon

Thin films of aluminum or aluminum-silicon can be used in conjunction with thin films of chromium in integrated electronic circuits. For some applications, these films exhibit undesirable reactions; in particular, intermetallic formation below 500 C must be inhibited or prevented. The Al films, being the principal current carriers in interconnective metal applications, are usually much thicker than the Cr; so one might expect Al-rich intermetallics to form when the processing temperature goes out of control. Unfortunately, the JCPDS and the literature do not contain enough data on the Al-rich phases CrAl7 and Cr2Al11, and the determination of these data was a secondary aim of this work.To define a matrix of Cr-Al diffusion couples, Cr-Al films were deposited with two sets of variables: Al or Al-Si, and broken vacuum or single pumpdown. All films were deposited on 2-1/4-inch thermally oxidized Si substrates. A 500-Å layer of Cr was deposited at 120 Å/min on substrates at room temperature, in a vacuum system that had been pumped to 2 x 10-6 Torr. Then, with or without vacuum break, a 1000-Å layer of Al or Al-Si was deposited at 35 Å/s, with the substrates still at room temperature.

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