Mechanisms for the enhancement of the thermal stability of organic thin films by aluminum oxide capping layers

2006 ◽  
Vol 21 (2) ◽  
pp. 455-464 ◽  
Author(s):  
S. Sellner ◽  
A. Gerlach ◽  
F. Schreiber ◽  
M. Kelsch ◽  
N. Kasper ◽  
...  

We present a detailed study of the thermal stability of organic thin films of diindenoperylene encapsulated by sputtered aluminum oxide layers. We studied the influence of capping layer thickness, stoichiometry, and heating rate on the thermal stability of capped films and their eventual breakdown. Under optimized encapsulation conditions (thick and stoichiometric capping layer), the organic films desorb only at temperatures 200 °C above the desorption of the uncapped film. Moreover, the capped organic films retain their crystalline order at these elevated temperatures, whereas they would normally (i.e., uncapped) be in the gas phase. This study therefore also shows a way of studying organic materials under temperature conditions normally inaccessible. Considering results from complementary techniques, we discuss possible scenarios for the eventual breakdown. The results have implications for the performance and long-term stability of organic devices for which stability against elevated temperatures as well as against exposure to ambient gases is crucial.

2004 ◽  
Vol 16 (19) ◽  
pp. 1750-1753 ◽  
Author(s):  
S. Sellner ◽  
A. Gerlach ◽  
F. Schreiber ◽  
M. Kelsch ◽  
N. Kasper ◽  
...  

2020 ◽  
Vol 117 (8) ◽  
pp. 082405 ◽  
Author(s):  
Delin Zhang ◽  
Dingbin Huang ◽  
Ryan J. Wu ◽  
Dustin Lattery ◽  
Jinming Liu ◽  
...  

Langmuir ◽  
2017 ◽  
Vol 33 (8) ◽  
pp. 1751-1762 ◽  
Author(s):  
Pawilai Chinwangso ◽  
Han Ju Lee ◽  
Andrew C. Jamison ◽  
Maria D. Marquez ◽  
Chul Soon Park ◽  
...  

2002 ◽  
Vol 14 (13-14) ◽  
pp. 961-963 ◽  
Author(s):  
A.C. Dürr ◽  
F. Schreiber ◽  
M. Kelsch ◽  
H.D. Carstanjen ◽  
H. Dosch

2021 ◽  
Vol 46 (5) ◽  
pp. 4137-4153
Author(s):  
Neha Verma ◽  
Rob Delhez ◽  
Niek M. van der Pers ◽  
Frans D. Tichelaar ◽  
Amarante J. Böttger

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Shengxi Wang ◽  
Anurag Roy ◽  
Kyriakos Komvopoulos

AbstractAmorphous carbon (a-C) films are widely used as protective overcoats in many technology sectors, principally due to their excellent thermophysical properties and chemical inertness. The growth and thermal stability of sub-5-nm-thick a-C films synthesized by filtered cathodic vacuum arc on pure (crystalline) and nitrogenated (amorphous) silicon substrate surfaces were investigated in this study. Samples of a-C/Si and a-C/SiNx/Si stacks were thermally annealed for various durations and subsequently characterized by high-resolution transmission electron microscopy (TEM) and electron energy loss spectroscopy (EELS). The TEM images confirmed the continuity and uniformity of the a-C films and the 5-nm-thick SiNx underlayer formed by silicon nitrogenation using radio-frequency sputtering. The EELS analysis of cross-sectional samples revealed the thermal stability of the a-C films and the efficacy of the SiNx underlayer to prevent carbon migration into the silicon substrate, even after prolonged heating. The obtained results provide insight into the important attributes of an underlayer in heated multilayered media for preventing elemental intermixing with the substrate, while preserving the structural stability of the a-C film at the stack surface. An important contribution of this investigation is the establishment of an experimental framework for accurately assessing the thermal stability and elemental diffusion in layered microstructures exposed to elevated temperatures.


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