An innovated 500V UHV ESD self-protection device structure

Background/Objectives: There is the needs for the service not only to keep a user informed of access to potentially dangerous people approaching from the rear by alarm sound or vibration through automatic sensor installed the device but to transmit location as well as sensing time to guardian through smartphone appwhen women are going off the beaten track on the way home late at nightMethods/Statistical analysis :It is composed of app that is interlocked with a protection device installed human body detection sensor and camera capable of autosensing potentially dangerous people approaching according to proximity sensor. This autodetection makes it possible not only to inform user on approaching the people by alarm sound as well as vibration but to transmit sensor detecting time and location to guardian.Findings: Self-protection device based IoT which not only is informed approaching a dangerous person by alarm and vibration using a device attached sensor in case of sensing the people’s approaching but catches danger through smartphone application to take a picture and images included time and location is developed in this study.Improvements/Applications: This device will be expected to use not only women but students who are bullied at school. Pictures at school violence are transmitted to guardian if the student who has a device attached to the front of himmay occur school violence. Other improvements including if the device is dropped or handled roughly are under active consideration to send pictures or explanation of situation for guardian.

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A novel ESD protection device structure for HV-MOS ICs

2009 IEEE International Reliability Physics Symposium ◽

10.1109/irps.2009.5173326 ◽

2009 ◽

Cited By ~ 9

Author(s):

Tsutomu Imoto ◽

Kouzou Mawatari ◽

Kuniko Wakiyama ◽

Toshio Kobayashi ◽

Motoyasu Yano ◽

...

Keyword(s):

Protection Device ◽

Device Structure ◽

Esd Protection

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GAMBARAN KADAR ENZIM KOLINESTERASE DALAM DARAH PADA KELOMPOK TANI MEKAR NADI DI DESA BATUNYA KECAMATAN BATURITI

Meditory : The Journal of Medical Laboratory ◽

10.33992/m.v6i2.455 ◽

2019 ◽

Vol 6 (2) ◽

pp. 108-115

Author(s):

Nyoman Mastra

Keyword(s):

Sampling Method ◽

Descriptive Study ◽

Test System ◽

The Other ◽

System Model ◽

Enzyme Analysis ◽

Protection Device ◽

Negative Effects ◽

Result Show ◽

Self Protection

Background: Pesticides is poison and dangerous materials. It can cause negative effects to human health directly or indirectly. Blood cholinesterase enzyme analysis is one of the methods to indicate that someone is poisons by pesticide. Purpose: This research is a descriptive study. The aim of this study is to illustrate the cholinesterase levels in the farmer’s blood especially the farmers in Batunya village. Methods: The population in this research was 30 farmers who are the members of Groups Tani Mekar Nadi. The sampling method that used in this research was saturation sampling. Data collection used the questionnaire. The test-mateChE cholinesterase test system (model 400) is the device that used to check the level of cholinesterase in the farmers’ blood. Result: The result show that 22 peoples (73,3%) cholinesterase level was abnormal. In the other hand, 8 of the farmer (26,7%) has normal level of cholinesterase. Conclusion: From the result it can be concluded that it’s still important to monitor the level of cholinesterase in farmers’ blood to increase awareness towards the danger of pesticide, always use self-protection device, and conducting a good pesticide management.Keywords: pesticide, cholinesterase, poisoned

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The Characteristics of ESD Protection Device Based on Static Induction Thyristors

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.303-306.1803 ◽

2013 ◽

Vol 303-306 ◽

pp. 1803-1807

Author(s):

Jian Hong Yang ◽

Lin Jiao Zhang ◽

Fei Hu Zhao

Keyword(s):

Negative Resistance ◽

Testing System ◽

Protection Device ◽

Device Structure ◽

Novel Structure ◽

Esd Protection ◽

Static Induction ◽

The Time Domain ◽

Static Induction Thyristors ◽

Time Domain Reflectometer

A novel structure of ESD protection device based on the static induction thyristors (SITh) was in further investigation. Detailed analysis of the negative resistance characteristics of SITh was presented, especially its blocking and conducting states that satisfy the requirements in ESD events. The characteristics of SITh for ESD protection were obtained using the Time Domain Reflectometer (TDR) type of Transmission Line Pulse (TLP) testing system. The results illustrate that SITh for ESD protection has the following advantages: 1) It has a strong ESD stress handing capability (3.75 kV); 2) Its second breakdown current is large enough (2.5 A) to release great ESD current; 3) DC leakage current of SITh is very small (1 μA); 4) SITh can break through the limitations of transitional trigger voltages, whose trigger voltage is dynamically adjustable as well; 5) The ESD response time can be controlled through optimizing device structure of SITh.

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Influence of MBE Growth Conditions on Dislocation Densities of GaAs/Ge Epilayers Grown on Silicon Substrates

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100118692 ◽

1985 ◽

Vol 43 ◽

pp. 364-365

Author(s):

K.M. Hones ◽

P. Sheldon ◽

B.G. Yacobi ◽

A. Mason

Keyword(s):

High Efficiency ◽

Lattice Mismatch ◽

Low Cost ◽

Growth Conditions ◽

Nonradiative Recombination ◽

Device Structure ◽

Si Substrates ◽

Transmission Electron ◽

Dislocation Densities ◽

Dislocation Type

There is increasing interest in growing epitaxial GaAs on Si substrates. Such a device structure would allow low-cost substrates to be used for high-efficiency cascade- junction solar cells. However, high-defect densities may result from the large lattice mismatch (∼4%) between the GaAs epilayer and the silicon substrate. These defects can act as nonradiative recombination centers that can degrade the optical and electrical properties of the epitaxially grown GaAs. For this reason, it is important to optimize epilayer growth conditions in order to minimize resulting dislocation densities. The purpose of this paper is to provide an indication of the quality of the epitaxially grown GaAs layers by using transmission electron microscopy (TEM) to examine dislocation type and density as a function of various growth conditions. In this study an intermediate Ge layer was used to avoid nucleation difficulties observed for GaAs growth directly on Si substrates. GaAs/Ge epilayers were grown by molecular beam epitaxy (MBE) on Si substrates in a manner similar to that described previously.

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Measurement of lattice parameter at the nanometer scale using convergent-beam microdiffraction from a thermal emission source

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100149283 ◽

1993 ◽

Vol 51 ◽

pp. 690-691

Author(s):

W. T. Pike

Keyword(s):

Electron Microscope ◽

Transmission Electron Microscope ◽

Thermal Emission ◽

Lattice Parameter ◽

Scanning Transmission Electron Microscope ◽

Emission Source ◽

Device Structure ◽

Transmission Electron ◽

Scanning Transmission ◽

Convergent Beam

With the advent of crystal growth techniques which enable device structure control at the atomic level has arrived a need to determine the crystal structure at a commensurate scale. In particular, in epitaxial lattice mismatched multilayers, it is of prime importance to know the lattice parameter, and hence strain, in individual layers in order to explain the novel electronic behavior of such structures. In this work higher order Laue zone (holz) lines in the convergent beam microdiffraction patterns from a thermal emission transmission electron microscope (TEM) have been used to measure lattice parameters to an accuracy of a few parts in a thousand from nanometer areas of material.Although the use of CBM to measure strain using a dedicated field emission scanning transmission electron microscope has already been demonstrated, the recording of the diffraction pattern at the required resolution involves specialized instrumentation. In this work, a Topcon 002B TEM with a thermal emission source with condenser-objective (CO) electron optics is used.

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Promoting Hearing Loss Prevention in Audiology Practice

Perspectives on Public Health Issues Related to Hearing and Balance ◽

10.1044/hcoa13.1.3 ◽

2012 ◽

Vol 13 (1) ◽

pp. 3-19 ◽

Cited By ~ 5

Author(s):

David C. Byrne ◽

Christa L. Themann ◽

Deanna K. Meinke ◽

Thais C. Morata ◽

Mark R. Stephenson

Keyword(s):

Hearing Loss ◽

Sound Level ◽

Health Campaigns ◽

Loss Prevention ◽

Hearing Conservation ◽

Prevention Services ◽

Occupational Programs ◽

Strategic Position ◽

Public Health Campaigns ◽

Self Protection

An audiologist should be the principal provider and advocate for all hearing loss prevention activities. Many audiologists equate hearing loss prevention with industrial audiology and occupational hearing conservation programs. However, an audiologist’s involvement in hearing loss prevention should not be confined to that one particular practice setting. In addition to supervising occupational programs, audiologists are uniquely qualified to raise awareness of hearing risks, organize public health campaigns, promote healthy hearing, implement intervention programs, and monitor outcomes. For example, clinical audiologists can show clients how to use inexpensive sound level meters, noise dosimeters, or phone apps to measure noise levels, and recommend appropriate hearing protection. Audiologists should identify community events that may involve hazardous exposures and propose strategies to minimize risks to hearing. Audiologists can help shape the knowledge, beliefs, motivations, attitudes, and behaviors of individuals toward self-protection. An audiologist has the education, tools, opportunity, and strategic position to facilitate or promote hearing loss surveillance and prevention services and activities. This article highlights real-world examples of the various roles and substantial contributions audiologists can make toward hearing loss prevention goals.

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