Centroid and Inversion Charge Model for Long Channel Strained-Silicon GAA MOSFET with Quantum Effect

2020 ◽  
Author(s):  
Fatimah K.A. Hamid ◽  
N.Ezaila Alias ◽  
Zaharah Johari ◽  
Razali Ismail
Keyword(s):  
Quantum Effect ◽  
Strained Silicon ◽  
Charge Model ◽  
Inversion Charge ◽  
Long Channel ◽  
And Inversion

scholarly journals Threshold voltage modeling in (100), (110) and (111) oriented nanoscale MOSFET substrates

2011 ◽  
Vol 8 (2) ◽  
pp. 147-154
Author(s):  
Amit Chaudhry ◽  
Nath Jatindra
Keyword(s):  
Threshold Voltage ◽  
Crystal Orientation ◽  
Field Effect Transistor ◽  
Inversion Layer ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Charge Model ◽  
Inversion Charge ◽  
Effect Transistor ◽  
Good Agreement

An analytical model for the inversion layer quantization for nanoscale - Metal Oxide Semiconductor Field Effect Transistor (MOSFET) with different crystallographic substrate orientations, such as (100), (110) and (111) has been developed. The threshold voltage analysis has been studied using the quantum inversion charge model under three substrate orientations. The results indicate a significant impact of crystal orientation on the threshold voltage and the inversion charge density. The results have also been compared with the numerically reported results and show good agreement.

An IGFET inversion charge model for VLSI systems

1985 ◽  
Vol 32 (2) ◽  
pp. 434-440 ◽  
Author(s):  
L.L. Lewyn ◽  
J.D. Meindl
Keyword(s):  
Charge Model ◽  
Inversion Charge

Analytical Quantum Model for Germanium Channel Gate-All-Around (GAA) MOSFET

2019 ◽  
Vol 59 ◽  
pp. 137-148 ◽  
Author(s):  
Palanichamy Vimala ◽  
N.R. Nithin Kumar
Keyword(s):  
Inversion Layer ◽  
Drain Current ◽  
Oxide Semiconductor ◽  
Quantum Model ◽  
Quantum Confinement Effects ◽  
Charge Model ◽  
Proposed Model ◽  
Inversion Charge ◽  
Quantum Version ◽  
Quantum Mechanical Effects

The paper proposes analytical model for Gate-All-Around Metal Oxide Semiconductor Field Effect Transistor (GAA-MOSFET) for germanium channel including quantum mechanical effects. It is achieved by solving coupled Schrodinger-Poisson’s equation using variational approach. The proposed model takes quantum confinement effects to obtain charge centroid and inversion charge model. By using these models the quantum version of inversion layer capacitance, inversion charge distribution function and Drain current expressions are modelled and the performance evaluation of the developed model is compared with Silicon channel GAA-MOSFET. Analytically modelled expressions are verified by comparing the model with simulation results.

CMOS multiplier based on the relationship between drain current and inversion charge

2009 ◽  
Vol 3 (5) ◽  
pp. 239-247 ◽  
Author(s):  
M.B. Machado ◽  
C. Galup-Montoro ◽  
A.I.A. Cunha ◽  
M.C. Schneider ◽  
L.A. de Lacerda
Keyword(s):  
Drain Current ◽  
Inversion Charge ◽  
And Inversion ◽  
The Relationship
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