The Dielectric Properties and Radiation Resistance of Aluminum Oxide Layers Obtained by Atomic Layer Deposition

Author(s):  
Dmitriy I. Dolzhenko ◽  
Viktoria M. Kapralova ◽  
Nikolay T. Sudar
2010 ◽  
Vol 22 (32) ◽  
pp. 3564-3567 ◽  
Author(s):  
Paul Poodt ◽  
Adriaan Lankhorst ◽  
Fred Roozeboom ◽  
Karel Spee ◽  
Diederik Maas ◽  
...  

Author(s):  
Sungho Park ◽  
Byung Jun Kim ◽  
Tae Yeon Kim ◽  
Eui Young Jung ◽  
Kyu-Myung Lee ◽  
...  

We have developed a visible-light phototransistor with excellent photodetection characteristics and stability via atomic layer deposition (ALD) to add a thin layer of aluminum oxide (Al2O3) to quantum dot (QD)/zinc oxide (ZnO) films.


2010 ◽  
Vol 20 (18) ◽  
pp. 3099-3105 ◽  
Author(s):  
David J. Comstock ◽  
Steven T. Christensen ◽  
Jeffrey W. Elam ◽  
Michael J. Pellin ◽  
Mark C. Hersam

2010 ◽  
Vol 96 (18) ◽  
pp. 182901 ◽  
Author(s):  
C. Wiemer ◽  
L. Lamagna ◽  
S. Baldovino ◽  
M. Perego ◽  
S. Schamm-Chardon ◽  
...  

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