SI Considerations in Flexible Channels on High-Speed Intra-Panel Interface for Large-Size Flat Panel Display Applications

Author(s):  
Jinho Kim ◽  
Jihyun Lee ◽  
Seonha Lee ◽  
Jungsun Yoo ◽  
Sungwook Moon ◽  
...  
1997 ◽  
Vol 471 ◽  
Author(s):  
R. Pethe ◽  
C. Deshpandey ◽  
S. Dixit ◽  
E. Demaray ◽  
D. Meakin ◽  
...  

Large grain poly-Silicon (p-Si) films have been evaluated for high speed TFT for flat panel displays [1,2]. It is expected that with good quality p-Si, “System on Glass” products, in which entire electronic circuitry is incorporated directly onto glass are achievable [3]. This approach therefore has the potential to fabricate Integrated AMLCD's (IAMLCD) and bypass conventional Si wafer based products and integrate CMOS circuits with direct view TFT LCD manufacturing. To realize this potential; it is necessary to develop a production process for depositing repeatable, good quality p-Si films on to large area glass substrates.


2008 ◽  
Vol 1066 ◽  
Author(s):  
Toshiaki Arai ◽  
Narihiro Morosawa ◽  
Yoshio Inagaki ◽  
Koichi Tatsuki ◽  
Tetsuo Urabe

ABSTRACTA novel crystallization method for silicon based thin film transistor (TFT) is proposed for the fabrication of high performance large size flat panel displays. In spite of using almost the same TFT fabrication process as that of hydrogenated amorphous silicon (a-Si:H) TFT, the proposed metal capped laser thermal annealing method realizes the formation of uniform and dense micro crystalline silicon (μc-Si), and provides mobility of 3.1 cm2/V•s, threshold voltage (ΔVth) of 2.3 V, and sub threshold slope (S) of 0.93 V/decade. Moreover, proposed stacked n+ amorphous silicon structure realizes extremely low off-current maintaining high on-current. As the reliability of TFT, a threshold voltage sift (ΔVth) under the high current bias stress test (BTS) condition was investigated, and realized the assumed ΔVth of +1.77 V after 100,000 hours stress of 10 μA and 50°C. This value is 2 orders smaller than that of a-Si:H TFT and only three times larger than that of low temperature poly silicon (LTPS) TFT.We believe that our μc-Si TFT technology is the suitable solution for the high quality, large size flat panel display mass-production.


2020 ◽  
Author(s):  
Takashi Yagami ◽  
Yohei Takarada ◽  
Kento Hayashi ◽  
Shigehiko Miyagi ◽  
Yusuke Taki ◽  
...  

Author(s):  
Georgios Ermidis ◽  
Rasmus C. Ellegard ◽  
Vincenzo Rago ◽  
Morten B. Randers ◽  
Peter Krustrup ◽  
...  

The purpose of this study was to quantify the exercise intensity and technical involvement of U9 boys’ and girls’ team handball during different game formats, and the differences between genders. Locomotor activity (total distance, distance in speed zones, accelerations, and decelerations), heart rate (HR), and technical involvement (shots, goals, and duels) metrics were collected during various 15 min game formats from a total of 57 Danish U9 players (37 boys and 20 girls). Game formats were a small size pitch (20 × 13 m) with 3 vs 3 players and offensive goalkeepers (S3 + 1) and 4 vs 4 players (S4), a medium size pitch (25.8 × 20 m) with 4 vs 4 (M4) and 5 vs 5 (M5) players, and a large size pitch (40 × 20 m) with 5 vs 5 (L5) players. Boys and girls covered a higher total distance (TD) of high-speed running (HSR) and sprinting during L5 games compared to all other game formats (p < 0.05; ES = (−0.9 to −2.1), (−1.4 to −2.8), and (−0.9 to −1.3) respectively). Players covered the highest amount of sprinting distance in L5 games compared to all other game formats (p < 0.01; ES = 0.8 to 1.4). In all the game formats, players spent from 3.04 to 5.96 min in 180–200 bpm and 0.03 min to 0.85 min in >200 bpm of the total 15 min. In addition, both genders had more shots in S3 + 1 than M5 (p < 0.01; ES = 1.0 (0.4;1.7)) and L5 (p < 0.01; ES = 1.1 (0.6;2.2)). Team handball matches have high heart rates, total distances covered, and high-intensity running distances for U9 boys and girls irrespective of the game format. Locomotor demands appeared to be even higher when playing on larger pitches, whereas the smaller pitch size and fewer players led to elevated technical involvement.


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