Micro Crystalline Silicon TFT by the Metal Capped Diode Laser Thermal Annealing Method

2008 ◽  
Vol 1066 ◽  
Author(s):  
Toshiaki Arai ◽  
Narihiro Morosawa ◽  
Yoshio Inagaki ◽  
Koichi Tatsuki ◽  
Tetsuo Urabe
Keyword(s):  
Amorphous Silicon ◽  
Thermal Annealing ◽  
Threshold Voltage ◽  
High Performance ◽  
Crystalline Silicon ◽  
Stress Test ◽  
Flat Panel Display ◽  
Flat Panel ◽  
Large Size ◽  
Annealing Method

ABSTRACTA novel crystallization method for silicon based thin film transistor (TFT) is proposed for the fabrication of high performance large size flat panel displays. In spite of using almost the same TFT fabrication process as that of hydrogenated amorphous silicon (a-Si:H) TFT, the proposed metal capped laser thermal annealing method realizes the formation of uniform and dense micro crystalline silicon (μc-Si), and provides mobility of 3.1 cm2/V•s, threshold voltage (ΔVth) of 2.3 V, and sub threshold slope (S) of 0.93 V/decade. Moreover, proposed stacked n+ amorphous silicon structure realizes extremely low off-current maintaining high on-current. As the reliability of TFT, a threshold voltage sift (ΔVth) under the high current bias stress test (BTS) condition was investigated, and realized the assumed ΔVth of +1.77 V after 100,000 hours stress of 10 μA and 50°C. This value is 2 orders smaller than that of a-Si:H TFT and only three times larger than that of low temperature poly silicon (LTPS) TFT.We believe that our μc-Si TFT technology is the suitable solution for the high quality, large size flat panel display mass-production.

Amorphous Silicon Ultra Thin Base Bipolar Phototransistor with High Performance (β=12, τx ≤30μs)

1985 ◽  
Vol 54 ◽  
Author(s):  
C. Y. Chang ◽  
B. S. Wu ◽  
Y. K. Fang ◽  
R. H. Lee
Keyword(s):  
Amorphous Silicon ◽  
High Speed ◽  
High Performance ◽  
Response Speed ◽  
High Gain ◽  
Bipolar Transistor ◽  
Current Gain ◽  
Flat Panel Display ◽  
Element Array ◽  
Good Agreement

ABSTRACTAn n+ /i/p /i/n amorphous silicon bipolar transistor has been successfully fabricated with a current gain of 12 and a response speed of 30 yS This new structure of bipolar transistor has a very thin base (200Å), therefore, high gain and high speed is obtainable. This device has a very promising applications as a flat panel display transistor and a phototransistor in photosensing element/array and photo coupler. Electrical and optical characteristics have been extensively investigated. Theoretical model and experimental results are plausibly in good agreement.Variation from the fundamental structure is also been developed, such as the Schottky emitter Al/i/p /i/n bipolar transistor.

High-performance metal-semiconductor-metal photodetector with a thin hydrogenated amorphous silicon layer on crystalline silicon

1995 ◽  
Vol 31 (24) ◽  
pp. 2123-2124 ◽  
Author(s):  
Li-Hong Laih ◽  
Jyh-Wong Hong ◽  
Tean-Sen Jen ◽  
Rong-Heng Yuang ◽  
Wen-Chin Tsay ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
High Performance ◽  
Crystalline Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Layer ◽  
Metal Semiconductor Metal ◽  
Hydrogenated Amorphous

ELECTRICAL AND OPTICAL PROPERTIES OF OLED USING NEW EMISSIVE MATERIAL Al2Nq4

2006 ◽  
Vol 05 (06) ◽  
pp. 859-864
Author(s):  
KI-SUNG YANG ◽  
HO-SIK LEE ◽  
SEUNG-UN KIM ◽  
YOON-KI JANG ◽  
DOO-SEOK KIM ◽  
...  
Keyword(s):  
High Performance ◽  
Room Temperature ◽  
System Model ◽  
Flat Panel Display ◽  
Flat Panel ◽  
Electrical And Optical Properties ◽  
Light Emitting ◽  
Current Voltage ◽  
Analysis System ◽  
Green Photoluminescence

Since the first report of the light-emitting diodes based on Alq 3, many organic materials have been synthesized and extended efforts have been made to obtain high performance electroluminescent (EL) device. We synthesized new emissive material, 1, 4-dihydoxy-5, 8-naphtaquinone· Alq 3 complex( Al 2 Nq 4), and extended efforts have been made to obtain high-performance electroluminescent (EL) devices. Current–voltage (I–V) and luminance–voltage (L–V) characteristics were measured by Flat Panel Display Analysis System (Model 200-AT) at room temperature. The Al 2 Nq 4 shows green photoluminescence and electroluminescence spectra at about 510 nm, and ITO/Al 2 Nq 4/Cathode device shows typical rectifying characteristics.

Progress in Electroluminescent Devices Using Molecular Thin Films

MRS Bulletin ◽  
1997 ◽  
Vol 22 (6) ◽  
pp. 39-45 ◽  
Author(s):  
Tetsuo Tsutsui
Keyword(s):  
High Performance ◽  
High Efficiency ◽  
Charge Injection ◽  
Visible Spectral Range ◽  
Flat Panel Display ◽  
Organic Thin Film ◽  
Molecular Materials ◽  
Flat Panel ◽  
High Quality ◽  
Injection Type

Organic electroluminescence (EL) is moving from a simple curiosity in laboratories to the reality of commercial use. The day will soon arrive when high-quality green EL displays find practical usage. Charge-injection-type EL involves the combination of positive and negative charge carriers injected from electrodes in contact with an organic thin film. The occurrence of EL through bipolar charge injection into organic solids was clarified for single crystals of anthracene and related compounds in the 1960s. Few new developments in physics exist today for organic EL. However worldwide enthusiasm for charge-injection-type EL, which started in the mid-1980s, has been increasing rapidly. The motivation for this renewed interest is straightforward. High-efficiency surface emission across the whole visible spectral range can be obtained easily, and prospects now exist for full-color flat-panel-display technology.Since the demonstration of high-performance EL devices made of multilayers of vacuum-sublimed dye films by Tang and VanSlyke, much progress has occurred in the research and development of EL devices made from molecular materials. A variety of molecular materials such as vacuum-sublimed dye films, fully π-conjugated polymers, polymers with chromophores orr skeletal chains, or side chains, and polymer-dispersed dye films can be used for EL devices.Among a variety of EL devices, multilayer-structure versions made of vacuum-sublimed dye films exhibit the best performance. Application-oriented research in the development of high-quality flat-panel displays has been performed during the past 10 years, mainly in Japan's private-sector laboratories.

Performance Enhancement of Channel-Engineered Al–Zn–Sn–O Thin-Film Transistors with Highly Conductive In–Ga–Zn–O Buried Layer via Vacuum Rapid Thermal Annealing

2020 ◽  
Vol 20 (8) ◽  
pp. 4671-4677
Author(s):  
Sung-Hun Kim ◽  
Won-Ju Cho
Keyword(s):  
Thin Film ◽  
Thermal Annealing ◽  
Temperature Stress ◽  
Rapid Thermal Annealing ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
High Performance ◽  
Gate Bias ◽  
Buried Layer ◽  
Bias Temperature Stress

In this study, we propose, fabricate, and examine the electrical characteristics of high-performance channel-engineered amorphous aluminum-doped zinc tin oxide (a-AZTO) thin-film transistors (TFTs). Amorphous indium gallium zinc oxide (a-IGZO) film with improved conductivity (obtained via rapid thermal annealing in vacuum) is applied as the local conductive buried layer (LCBL) of the channel-engineered a-AZTO TFTs. The optical transmittance of the a-IGZO and a-AZTO films in the visible region is >85%. The a-IGZO LCBL reduces the resistance of the a-AZTO channel, thereby resulting in increased drain current and improved device performance. We find that our fabricated channel-engineered a-AZTO TFTs with LCBLs are superior to non-channel-engineered a-AZTO TFTs without LCBLs in terms of electrical properties such as the threshold voltage, mobility, subthreshold swing, and on–off current ratios. In particular, as the a-IGZO LCBL length at the bottom of the channel increases, the channel resistance gradually decreases, eventually resulting in a mobility of 22.8 cm2/V · s, subthreshold swing of 470 mV/dec, and on–off current ratio of 3.98×107. We also investigate the effect of the a-IGZO LCBL on the operational reliability of a-AZTO TFTs by measuring the variation in the threshold voltage for positive gate bias temperature stress (PBTS), negative gate bias temperature stress (NBTS), and negative gate bias temperature illumination stress (NBTIS). The results indicate that the TFT instability for temperature and light is not affected by the LCBL. Therefore, our proposed channel-engineered a-AZTO TFT can form a promising high-performance high-reliability switching device for next-generation displays.

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