A pattern transfer from semiconductors, and more: Nikon’s large-size photomask blanks for flat panel display

2020 ◽  
Author(s):  
Takashi Yagami ◽  
Yohei Takarada ◽  
Kento Hayashi ◽  
Shigehiko Miyagi ◽  
Yusuke Taki ◽  
...  
2008 ◽  
Vol 1066 ◽  
Author(s):  
Toshiaki Arai ◽  
Narihiro Morosawa ◽  
Yoshio Inagaki ◽  
Koichi Tatsuki ◽  
Tetsuo Urabe

ABSTRACTA novel crystallization method for silicon based thin film transistor (TFT) is proposed for the fabrication of high performance large size flat panel displays. In spite of using almost the same TFT fabrication process as that of hydrogenated amorphous silicon (a-Si:H) TFT, the proposed metal capped laser thermal annealing method realizes the formation of uniform and dense micro crystalline silicon (μc-Si), and provides mobility of 3.1 cm2/V•s, threshold voltage (ΔVth) of 2.3 V, and sub threshold slope (S) of 0.93 V/decade. Moreover, proposed stacked n+ amorphous silicon structure realizes extremely low off-current maintaining high on-current. As the reliability of TFT, a threshold voltage sift (ΔVth) under the high current bias stress test (BTS) condition was investigated, and realized the assumed ΔVth of +1.77 V after 100,000 hours stress of 10 μA and 50°C. This value is 2 orders smaller than that of a-Si:H TFT and only three times larger than that of low temperature poly silicon (LTPS) TFT.We believe that our μc-Si TFT technology is the suitable solution for the high quality, large size flat panel display mass-production.


MRS Bulletin ◽  
1996 ◽  
Vol 21 (8) ◽  
pp. 38-42 ◽  
Author(s):  
Richard A. Gottscho ◽  
Maria E. Barone ◽  
Joel M. Cook

The ever-shrinking dimensions of microelectronic devices has mandated the use of plasma processing in integrated circuit (IC) factories worldwide. Today the plasma-processing industry has grown to over $3 billion in revenues per year, well in excess of predictions made only a few years ago. Plasma etching and deposition systems are also found throughout flat-panel-display (FPD) factories despite the much larger dimensions of thin-film transistors (TFTs) that are used to switch picture elements (pixels) on and off. Besides the use of plasma in etching and depositing thin films, other processes include the following: removal of photoresist remnants after development (descumming), stripping developed photoresist after pattern transfer (ashing), and passivating defects in polycrystalline material. Why are plasma processes so prevalent?In etching, plasmas are used for high-fidelity transfer of the photolithographically defined pattern that defines the device or circuit. More generally, plasma provides the means to taper sidewalls. In Si processing, the sidewalls must be nearly vertical to obtain high density integration and faster performance. However in making FPDs, sidewalls are tapered to obtain uniform step coverage and reduce shorting. In deposition, plasmas are used to enable processing at low temperature. For both etching and deposition, only plasma processing provides an economically viable means for processing large area substrates: 300 mm for Si and more than 550 × 650 mm for FPDs. It is the ability to scale uniform reactant generation to larger areas that sets plasma apart from beam-based processes that might otherwise offer the desired materials modifications. The nonequilibrium characteristics of plasma further distinguish this processing method. Energetic electrons break apart reactant precursors while ions bombard the surface anisotropically.


2018 ◽  
Vol 4 (11) ◽  
pp. 133
Author(s):  
HyungTae Kim ◽  
EungJoo Ha ◽  
KyungChan Jin ◽  
ByungWook Kim

A system for inspecting flat panel displays (FPDs) acquires scanning images using multiline charge-coupled device (CCD) cameras and industrial machine vision. Optical filters are currently installed in front of these inspection systems to obtain high-quality images. However, the combination of optical filters required is determined manually and by using empirical methods; this is referred to as passive color control. In this study, active color control is proposed for inspecting FPDs. This inspection scheme requires the scanning of images, which is achieved using a mixed color light source and a mixing algorithm. The light source utilizes high-power light emitting diodes (LEDs) of multiple colors and a communication port to dim their level. Mixed light illuminates an active-matrix organic light-emitting diode (AMOLED) panel after passing through a beam expander and after being shaped into a line beam. The image quality is then evaluated using the Tenenbaum gradient after intensity calibration of the scanning images. The dimming levels are determined using the simplex search method which maximizes the image quality. The color of the light was varied after every scan of an AMOLED panel, and the variation was iterated until the image quality approached a local maximization. The number of scans performed was less than 225, while the number of dimming level combinations was 20484. The proposed method can reduce manual tasks in setting-up inspection machines, and hence is useful for the inspection machines in FPD processes.


2011 ◽  
Vol 50 (3) ◽  
pp. 03CB06 ◽  
Author(s):  
Tong-Hun Hwang ◽  
Ik-Seok Yang ◽  
Oh-Kyong Kwon ◽  
Min-Ki Ryu ◽  
Choon-Won Byun ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document