Deposition of Precursor Poly - Silicon Films for Flat Panel Display Applications

1997 ◽  
Vol 471 ◽  
Author(s):  
R. Pethe ◽  
C. Deshpandey ◽  
S. Dixit ◽  
E. Demaray ◽  
D. Meakin ◽  
...  
Keyword(s):  
High Speed ◽  
Flat Panel Displays ◽  
Flat Panel Display ◽  
Large Area ◽  
Flat Panel ◽  
Glass Substrates ◽  
Poly Silicon ◽  
Electronic Circuitry ◽  
Si Films ◽  
Si Wafer

Large grain poly-Silicon (p-Si) films have been evaluated for high speed TFT for flat panel displays [1,2]. It is expected that with good quality p-Si, “System on Glass” products, in which entire electronic circuitry is incorporated directly onto glass are achievable [3]. This approach therefore has the potential to fabricate Integrated AMLCD's (IAMLCD) and bypass conventional Si wafer based products and integrate CMOS circuits with direct view TFT LCD manufacturing. To realize this potential; it is necessary to develop a production process for depositing repeatable, good quality p-Si films on to large area glass substrates.

A Large Area Rapid Thermal Processor for Flat Panel Displays

1993 ◽  
Vol 303 ◽  
Author(s):  
Chunghsin Lee ◽  
Robert B. Bramhall
Keyword(s):  
Heat Source ◽  
Great Difficulty ◽  
Flat Panel Displays ◽  
Flat Panel Display ◽  
Large Area ◽  
Flat Panel ◽  
Batch Type ◽  
Blue Phosphor ◽  
Single Arc ◽  
Heating Uniformity

ABSTRACTThe advantages of rapid thermal processing over slow, batch type processing have been demonstrated clearly in flat panel display manufacturing for a number of years. In the case of electroluminescence FPD, the brightness of the blue phosphor is increased by as much as 100%.However, rapid thermal processors that use a lamp-based heat source - either a tungsten lamp array or a single arc lamp - have great difficulty in achieving heating uniformity over large areas.By using a resistance-heated continuous heat source developed initially for RTP processing of large silicon wafers, temperature uniformity of less than +/− 2.5°C has been achieved over a panel with diagonal of 530mm.A description of the system and its characteristics are presented.

Use of Plasma Processing in Making Integrated Circuits and Flat-Panel Displays

MRS Bulletin ◽  
1996 ◽  
Vol 21 (8) ◽  
pp. 38-42 ◽  
Author(s):  
Richard A. Gottscho ◽  
Maria E. Barone ◽  
Joel M. Cook
Keyword(s):  
Integrated Circuits ◽  
Plasma Etching ◽  
Integrated Circuit ◽  
Plasma Processing ◽  
Pattern Transfer ◽  
Flat Panel Displays ◽  
Flat Panel Display ◽  
Large Area ◽  
Flat Panel ◽  
Microelectronic Devices

The ever-shrinking dimensions of microelectronic devices has mandated the use of plasma processing in integrated circuit (IC) factories worldwide. Today the plasma-processing industry has grown to over $3 billion in revenues per year, well in excess of predictions made only a few years ago. Plasma etching and deposition systems are also found throughout flat-panel-display (FPD) factories despite the much larger dimensions of thin-film transistors (TFTs) that are used to switch picture elements (pixels) on and off. Besides the use of plasma in etching and depositing thin films, other processes include the following: removal of photoresist remnants after development (descumming), stripping developed photoresist after pattern transfer (ashing), and passivating defects in polycrystalline material. Why are plasma processes so prevalent?In etching, plasmas are used for high-fidelity transfer of the photolithographically defined pattern that defines the device or circuit. More generally, plasma provides the means to taper sidewalls. In Si processing, the sidewalls must be nearly vertical to obtain high density integration and faster performance. However in making FPDs, sidewalls are tapered to obtain uniform step coverage and reduce shorting. In deposition, plasmas are used to enable processing at low temperature. For both etching and deposition, only plasma processing provides an economically viable means for processing large area substrates: 300 mm for Si and more than 550 × 650 mm for FPDs. It is the ability to scale uniform reactant generation to larger areas that sets plasma apart from beam-based processes that might otherwise offer the desired materials modifications. The nonequilibrium characteristics of plasma further distinguish this processing method. Energetic electrons break apart reactant precursors while ions bombard the surface anisotropically.

Development of Field Emission Flat Panel Displays at Motorola

1998 ◽  
Vol 509 ◽  
Author(s):  
A. A. Talin ◽  
B. Chalamala ◽  
B. F. Coll ◽  
J. E. Jaskie ◽  
R. Petersen ◽  
...  
Keyword(s):  
Field Emission ◽  
Flat Panel Displays ◽  
Flat Panel Display ◽  
Field Emission Display ◽  
Flat Panel ◽  
High Brightness ◽  
The Past ◽  
The World ◽  
Cathode Ray Tube ◽  
New Type

Over the past few years, Motorola, as well as several other companies around the world, have been developing a new type of flat panel display, called the field emission display (FED). The FED combines many of the advantages of its cousin, the cathode ray tube (CRT), including high brightness and contrast, wide angle viewability, and speed in a flat package that is only a few millimeters thick. A 14 cm diagonal FED prototype built at Motorola Flat Panel Display Division is shown below, in Figure 1.

Chimney-Shaped and Plateau-Shaped Gate Electrode Field Emission Arrays

1998 ◽  
Vol 509 ◽  
Author(s):  
F. G. Tarntair ◽  
C. C. Wang ◽  
W. K. Hong ◽  
H. K. Huang ◽  
H. C. Cheng
Keyword(s):  
Thin Film Deposition ◽  
Film Deposition ◽  
Uniform Structure ◽  
Flat Panel Display ◽  
Gate Electrode ◽  
Large Area ◽  
Flat Panel ◽  
Field Emitter Arrays ◽  
The Matrix ◽  
Field Emission Arrays

AbstractA triode structure of chimney-shaped field emitter arrays is proposed in this article. This triode structure includes the chimney-shaped emitter, thermal oxidation dioxide, and the plateau-shaped singlecrystalline silicon gate electrode. For the application of the matrix-addressable and large area flat panel display, the uniform structure of the emitters and the yield become critical manufacturing issues when attempting to control nano-meter size features. The uniformity and yield of the chimney-shaped emitters are very well controlled. The nano-sized gate-to-emitter separations can be created by the changing thickness of the insulator. The uniformity of the insulator and emitter material can be controlled within 3% which can be obtained by most large area thin film deposition tools, not by photolithography.

Thin films engineering of indium tin oxide: Large area flat panel displays application

2006 ◽  
Vol 200 (20-21) ◽  
pp. 5751-5759 ◽  
Author(s):  
U. Betz ◽  
M. Kharrazi Olsson ◽  
J. Marthy ◽  
M.F. Escolá ◽  
F. Atamny
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Flat Panel Displays ◽  
Large Area ◽  
Flat Panel

UV-Optics for Excimer Laser based Crystallization Processes

2001 ◽  
Vol 685 ◽  
Author(s):  
H.-J. Kahlert ◽  
Frank Simon ◽  
Berthold Burghardt
Keyword(s):  
Excimer Laser ◽  
Average Power ◽  
Industrial Applications ◽  
Flat Panel Display ◽  
Uniform Illumination ◽  
Optical Efficiency ◽  
Glass Substrates ◽  
Line Beam ◽  
Si Films ◽  
Polycrystalline Silicon Films

AbstractLaser based crystallization of thin amorphous films on glass substrates have entered into industrial applications since several years. The excimer laser based process provides a low temperature procedure to obtain polycrystalline silicon films on flat panel display substrates to fabricate thin film transistors (TFT's).The key to this application is a uniform illumination of the. Line Beam systems provide up to 365mm long homogeneous exposure fields operated with up to 300 W average power 308nm excimer lasers. The paper covers a technical overview of Line Beam Optics layout, recent developments and results.Further high resolution optics are described and discussed for sequential lateral solidification (SLS) (1,2,3) processes. The SLS application has demonstrated to efficiently produce directionally solidified microstructures or even grain-boundary –free regions on Si-films. Diffraction limited resolution in the range of several micrometers and high optical throughput are important parameters to this application.General considerations are presented to describe technical limits which compromise laser beam related coherence effects, optimum uniform illumination, adequate resolution and depth of focus and optical efficiency for the practical application.

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