Fabrication of VGA size near-infrared image sensor using room-temperature flip-chip bonding technology

Author(s):  
Takanori Shuto ◽  
Keiichiro Iwanabe ◽  
Mutsuo Ogura ◽  
Katsuhiko Nishida ◽  
Tanemasa Asano
2014 ◽  
Vol 53 (4S) ◽  
pp. 04EB01 ◽  
Author(s):  
Takanori Shuto ◽  
Keiichiro Iwanabe ◽  
Mutsuo Ogura ◽  
Katsuhiko Nishida ◽  
Tanemasa Asano

2013 ◽  
Author(s):  
T. Shuto ◽  
K. Iwanabe ◽  
M. Ogura ◽  
K. Nishida ◽  
T. Asano

Author(s):  
Hiroshi Komatsu

Since its early days of the industry, electronics apparatus has been in a rigid and flat surfaced case. ICs have been soldered on rigid substrate at high bonding temperature. However, in the IoT era, electronics components connect with the variety of applications which require different forms and shapes of outlook which lead substrate and board should be flexible and complex form. Conventional flip chip bonding technology, such as solder bump and copper pillar, need to raise bonding temperature around 260-degree C, eventually does not satisfy this flexile hybrid electronics (FHE) application requirement. We have originally developed flip chip bonding technology which consists of the bump formation by Conductive Paste (CP) printing followed by Non-Conductive Paste (NCP) dispensing and flip chip bonding at temperature as low as 120-degree C. Bumps with silver particle loaded epoxy resin on substrate were formed by screen printing. This enable us to make fine bump formation down to 60um minimum bump pitch and 30um bump diameter with tuning of screen-printing process. After the bump formation, NCP dispensing and flip chip bonding at 120-degree C which secure reasonable low electric resistance, 8×1E-4 ohm cm2, and strong adhesion of chip and substrate. The bonding temperature of this technology can be lowered down to 80-degree C without much difficulties, but just by fine tuning of Ag paste and its contents. This momentum will create a lot more of future applications and be one of the core technologies in the coming IoT era in FHE.


2014 ◽  
Vol 2014 (1) ◽  
pp. 000301-000306
Author(s):  
Hidekazu TANISAWA ◽  
Kohei HIYAMA ◽  
Takeshi ANZAI ◽  
Hiroki TAKAHASHI ◽  
Yoshinori MURAKAMI ◽  
...  

This paper reports on a flip-chip bonding technology using an aluminum bump at high temperatures, such as for SiC semiconductors. In recent years, double-sided mounting structures have been proposed for the purposes of miniaturization and low inductance. The surface mounting method requires durability to withstand high temperatures. We propose a new technique for the flip-chip bonding of an Al bump made from bonding wire. The recrystallization temperature of aluminum is under 250 °C. As a result, there is an expectation of mitigating mechanical stress between the chip and bonded substrate. A high-temperature exposure test at 250 °C for 3000 hours and a thermal-cycle test between −40 and 250 °C for 3000 cycles have been executed. Results indicate that shear strength of the Al bump meets the requirements set forth in the IEC60749-19 guideline until 2000 cycles at room temperature.


1992 ◽  
Vol 31 (Part 2, No.1A/B) ◽  
pp. L36-L38 ◽  
Author(s):  
Toshinori Ogashiwa ◽  
Hiroshi Nakagawa ◽  
Hideyuki Akimoto ◽  
Hiroyuki Shigyo ◽  
Susumu Takada

Author(s):  
T. Yoshida ◽  
Y. Fukasawa ◽  
T. Deguchi ◽  
K. Kawaguchi ◽  
T. Sugiyama ◽  
...  

2003 ◽  
Vol 43 (12) ◽  
pp. 2065-2075 ◽  
Author(s):  
Kazuto Nishida ◽  
Kazumichi Shimizu ◽  
Michiro Yoshino ◽  
Hideo Koguchi ◽  
Nipon Taweejun

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