Titanium disilicide formation for detection of temperature drift and oxygen leak in rapid thermal processing tool

2015 ◽  
Author(s):  
Neelakandan Sivanantham ◽  
Chai Chun Hoo ◽  
Lim Wei Hong ◽  
Sae Tae Veera
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Temperature Drift ◽  
Titanium Disilicide

A GaAs Sagfet Process Using TiSi2 and Rapid Thermal Annealing

1985 ◽  
Vol 52 ◽  
Author(s):  
D. Wood ◽  
J. Mun
Keyword(s):  
Gallium Arsenide ◽  
High Temperature ◽  
Barrier Height ◽  
Ideality Factor ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Titanium Disilicide ◽  
Auger Analysis ◽  
Conventional Annealing ◽  
First Time

ABSTRACTFor the first time a combination of titanium disilicide and rapid thermal processing has been used to produce a high temperature stable gate on gallium arsenide. A barrier height of 0.79 V with an ideality factor of 1.02 has been obtained after annealing up to 800°C, and useful results are found up to 900°C. Auger analysis shows little intermixing of the silicide with the underlying substrate, which is not the case for conventional annealing. The advantages of titanium disilicide over the more commonly used tungsten silicide with regard to film resistivity and stress will be discussed. A self-aligned gate MESFET (SAGFET) process has been developed using TiSi2 as the gate material.

scholarly journals Dopants redistribution during titanium‐disilicide formation by rapid thermal processing

1987 ◽  
Vol 61 (3) ◽  
pp. 1228-1230 ◽  
Author(s):  
A. A. Pasa ◽  
J. P. de Souza ◽  
I. J. R. Baumvol ◽  
F. L. Freire
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Titanium Disilicide

Point Defect Reaction in Silicon Wafers by Rapid Thermal Processing at More Than 1300°C Using an Oxidation Ambient

2019 ◽  
Vol 8 (1) ◽  
pp. P35-P40 ◽  
Author(s):  
Haruo Sudo ◽  
Kozo Nakamura ◽  
Susumu Maeda ◽  
Hideyuki Okamura ◽  
Koji Izunome ◽  
...  
Keyword(s):  
Point Defect ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Silicon Wafers ◽  
Defect Reaction

Modeling, Identification, and Control of Rapid Thermal Processing Systems

1994 ◽  
Vol 141 (11) ◽  
pp. 3200-3209 ◽  
Author(s):  
Charles D. Schaper ◽  
Mehrdad M. Moslehi ◽  
Krishna C. Saraswat ◽  
Thomas Kailath
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
And Control

5 nm Gate Oxide Grown by Rapid Thermal Processing for Future MOSFETs

1990 ◽  
Vol 29 (Part 2, No. 1) ◽  
pp. L137-L140 ◽  
Author(s):  
Hisashi Fukuda ◽  
Akira Uchiyama ◽  
Takahisa Hayashi ◽  
Toshiyuki Iwabuchi ◽  
Seigo Ohno
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Gate Oxide

Diffusion of Zn into Gaas 0.6 P0.4:Te From Zn-Doped Oxide Films By Rapid Thermal Processing

1987 ◽  
Vol 92 ◽  
Author(s):  
A. Usami ◽  
Y. Tokuda ◽  
H. Shiraki ◽  
H. Ueda ◽  
T. Wada ◽  
...  
Keyword(s):  
Diffusion Coefficient ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Oxide Films ◽  
Zn Diffusion ◽  
Enhanced Diffusion ◽  
Conventional Furnace ◽  
Zn Concentration ◽  
The Difference ◽  
Doped Oxide

ABSTRACTRapid thermal processing using halogen lamps was applied to the diffusion of Zn into GaAs0.6 P0.4:Te from Zn-doped oxide films. The Zn diffusion coefficient of the rapid thermal diffused (RTD) samples at 800°C for 6 s was about two orders of magnitude higher than that of the conventional furnace diffused samples at 800°C for 60 min. The enhanced diffusion of Zn by RTD may be ascribed to the stress field due to the difference in the thermal expansion coefficient between the doped oxide films and GaAs0.6P0.4 materials, and due to the temperature gradient in GaAs0.6P0 4 materials. The Zn diffusion coefficient at Zn concentration of 1.0 × l018 cm−3 was 3.6 × 10−11, 3.1 × 10−11 and 5.0 × 10−12 cm2 /s for the RTD samples at 950°C for 6 s from Zn-, (Zn,Ga)- and (Zn,P)-doped oxide films, respectively. This suggests that Zn diffusibility was controlled by the P in the doped oxide films.

Some results from CuGaSe 2 solar cells prepared by rapid thermal processing

2000 ◽  
Vol 361-362 ◽  
pp. 454-457 ◽  
Author(s):  
O. Schenker ◽  
M. Klenk ◽  
E. Bucher
Keyword(s):  
Solar Cells ◽  
Thermal Processing ◽  
Rapid Thermal Processing

Ni Silicide Formation on Polycrystalline SiGe and SiGeC Layers

2002 ◽  
Vol 745 ◽  
Author(s):  
Erik Haralson ◽  
Tobias Jarmar ◽  
Johan Seger ◽  
Henry H. Radamson ◽  
Shi-Li Zhang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Lateral Diffusion ◽  
Lateral Growth ◽  
Silicide Formation ◽  
Diffusion Couples ◽  
Planar Configuration ◽  
20 Nm

ABSTRACTThe reactions of Ni with polycrystalline Si, Si0.82Ge0.18 and Si0.818Ge0.18C0.002 films in two different configurations during rapid thermal processing were studied. For the usually studied planar configuration with 20 nm thick Ni on 130–290 nm thick Si1-x-yGexCy, NiSi1-xGex(C) forms at 450°C on either Si0.82Ge0.18 or Si0.818Ge0.18C0.002, comparable to NiSi formed on Si. However, the agglomeration of NiSi1-xGex(C) on Si0.818Ge0.18C0.002 occurs at 625°C, about 50°C higher than that of NiSi1-xGex on Si0.82Ge0.18. For thin-film lateral diffusion couples, a 200-nm thick Ni film was in contact with 80–130 nm thick Si1-x-yGexCy through 1–10 μm sized contact openings in a 170 nm thick SiO2 isolation. While the Ni3Si phase was formed for both the Si0.82Ge0.18 and Si0.818Ge0.18C0.002 samples, the presence of 0.2 at.% C caused a slightly slower lateral growth.

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