A GaAs Sagfet Process Using TiSi2 and Rapid Thermal Annealing

1985 ◽  
Vol 52 ◽  
Author(s):  
D. Wood ◽  
J. Mun
Keyword(s):  
Gallium Arsenide ◽  
High Temperature ◽  
Barrier Height ◽  
Ideality Factor ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Titanium Disilicide ◽  
Auger Analysis ◽  
Conventional Annealing ◽  
First Time

ABSTRACTFor the first time a combination of titanium disilicide and rapid thermal processing has been used to produce a high temperature stable gate on gallium arsenide. A barrier height of 0.79 V with an ideality factor of 1.02 has been obtained after annealing up to 800°C, and useful results are found up to 900°C. Auger analysis shows little intermixing of the silicide with the underlying substrate, which is not the case for conventional annealing. The advantages of titanium disilicide over the more commonly used tungsten silicide with regard to film resistivity and stress will be discussed. A self-aligned gate MESFET (SAGFET) process has been developed using TiSi2 as the gate material.

On the Contacts Formed in Ni-Al-Si System Due to Localized Melting by Means of Rapid Thermal Processing

1988 ◽  
Vol 100 ◽  
Author(s):  
A. Katz ◽  
Y. Komem
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Thermal Processing ◽  
Silicon Surface ◽  
Schottky Barrier Height ◽  
Rapid Thermal Processing ◽  
Solidification Process ◽  
Eutectic Liquid ◽  
Eutectic Melting ◽  
Rapid Melting

ABSTRACTLocalized rapid melting of an intermediate Al film in the Ni(30nm)/Al(10nm)/<100>n-Si system was successfully carried out by means of rapid thermal processing at temperatures higher than 580°C. This rapid melting resulted in the formation of a unique metal-silicon contact composed of three separated layers and has the following structure: Ni(Al0.5,Si0.5)/Al3 Ni/NiSi / <100>n-Si. It was found on the basis of quenching treatments after subsequent rapid thermal processings that an eutectic melting initiated at the Al-Si interface at 580°C, propagated towards the Ni layer and then formed a localized melt zone confined mainly to the region of the intermediate Al layer. The formation of the nickel silicides took place at the silicon surface after Ni diffusion through the melt zone, while the Al compounds were formed during a solidification process of the eutectic liquid. The eutectic melting at 580°C led to the decrease of the sheet resistance of the formed films from 3.2 to 2.6 / and to the increase of the Schottky barrier height of the contact from 0.6 to 0.76 eV.

Rapid Thermal Processing of III-Nitrides

1997 ◽  
Vol 470 ◽  
Author(s):  
J. Hong ◽  
J. W. Lee ◽  
C. B. Vartuli ◽  
J. D. MacKenzie ◽  
S. M. Donovan ◽  
...  
Keyword(s):  
High Temperature ◽  
Partial Pressure ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Device Fabrication ◽  
The Other ◽  
High Temperature Annealing ◽  
Surface Protection ◽  
Transient Thermal ◽  
Graphite Susceptor

ABSTRACTTransient thermal processing is employed for implant activation, contact alloying, implant isolation and dehydrogenation during III-nitride device fabrication. We have compared use of InN, AlN and GaN powder as methods for providing a N2 overpressure within a graphite susceptor for high temperature annealing of GaN, InN, A1N and InAlN. The AlN powder provides adequate surface protection to temperatures of ∼1100°C for AlN, > 1050°C for GaN, ∼600°C for InN and ∼800°C for the ternary alloy. While the InN powder provides a higher N2 partial pressure than AlN powder, at temperatures above ∼750°C the evaporation of In is sufficiently high to produce condensation of In droplets on the surfaces of the annealed samples. GaN powder achieved better surface protection than the other two cases.

Effects on TiN Film Properties of the Interaction Between Titanium and Borophosphosilicate Glass During High-Temperature Nitridation

1990 ◽  
Vol 202 ◽  
Author(s):  
C. S. Galovich ◽  
S. S. Lee ◽  
D. L. Kwong
Keyword(s):  
High Temperature ◽  
Structural Change ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Titanium Film ◽  
Film Properties ◽  
Titanium Layer ◽  
Tin Film ◽  
Borophosphosilicate Glass ◽  
Sem Analyses

ABSTRACTTitanium nitride, formed either by rapid thermal processing (RTP) or reactive sputtering, is commonly applied as a barrier film in the fabrication of metal-to-substrate contacts for CMOS devices. In one approach a titanium film is sputtered onto a patterned dielectric and then nitrided at a temperature greater than 500° C to form a TiN layer. Variations in the structure and resistivity of the titanium layer are observed when the titanium overlies a borophosphosilicate glass (BPSG) film. The structural change appears as a “wrinkling” of the TiN film and the TiN/BPSG interface. More severely wrinkled films are characterized by lower sheet resistivities. Results of TEM and SEM analyses are presented, as well as data on TiN resistivity and reflectance for nitridation temperatures in the range 650°C to 900°C, and for BPSG boron and phosphorus concentrations of approximately 3 to 5 wt. %. Mechanisms for the TiN wrinkling are discussed.

Demonstration of High Temperature Bandgap Voltage Reference Feasibility on SiC Material

2010 ◽  
Vol 645-648 ◽  
pp. 1131-1134 ◽  
Author(s):  
Viorel Banu ◽  
Pierre Brosselard ◽  
Xavier Jordá ◽  
Phillippe Godignon ◽  
José Millan
Keyword(s):  
High Temperature ◽  
Barrier Height ◽  
Ideality Factor ◽  
Schottky Diodes ◽  
Experimental Results ◽  
Voltage Reference ◽  
Bandgap Voltage Reference ◽  
Stable Voltage

This work demonstrates that a stable voltage reference with temperature, in the 25°C-300°C range is possible with SiC. This paper reports the simulated and experimental results as well and a practical and simplified vision on the principles of thermally compensated voltage reference circuits, usually named bandgap references. For our demonstration, we have used SiC Schottky diodes. The influence of the barrier height and the ideality factor on the voltage reference and a comparison between simulated and experimental results are also presented.

Integrated Rapid Thermal CVD Processing Solutions for 0.18–0.25μm Technologies

1997 ◽  
Vol 470 ◽  
Author(s):  
H. Gilboa ◽  
Y. E. Gilboa ◽  
Z. Atzmon ◽  
S. Levy ◽  
H. Spilberg ◽  
...  
Keyword(s):  
High Temperature ◽  
Flash Memory ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Chemical Vapor ◽  
Wafer Cleaning ◽  
Front End ◽  
Wafer Processing ◽  
Cluster Tool ◽  
Temperature Applications

ABSTRACTThe evolution of integrated single-wafer processing for high-temperature applications in the front end of the line (FEOL) occurred with the advancements in single-wafer rapid thermal processing and its acceptance as a manufacturing technology. The Integra RTCVD cluster tool for high-temperature applications features wafer cleaning, rapid thermal processing and single wafer chemical vapor deposition steps. The paper presents integrated vapor phase clean and RTCVD applications for FLASH memory gate stack and DRAM cell.

scholarly journals High Voltage Graphene Nanowall Trench MOS Barrier Schottky Diode Characterization for High Temperature Applications

2019 ◽  
Vol 9 (8) ◽  
pp. 1587
Author(s):  
Rahimah Mohd Saman ◽  
Sharaifah Kamariah Wan Sabli ◽  
Mohd Rofei Mat Hussin ◽  
Muhammad Hilmi Othman ◽  
Muhammad Aniq Shazni Mohammad Haniff ◽  
...  
Keyword(s):  
High Temperature ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Leakage Current ◽  
Barrier Layer ◽  
Ideality Factor ◽  
Schottky Barrier Height ◽  
Series Resistance ◽  
Measurement Data ◽  
Industrial Sectors

Graphene’s superior electronic and thermal properties have gained extensive attention from research and industrial sectors to study and develop the material for various applications such as in sensors and diodes. In this paper, the characteristics and performance of carbon-based nanostructure applied on a Trench Metal Oxide Semiconductor MOS barrier Schottky (TMBS) diode were investigated for high temperature application. The structure used for this study was silicon substrate with a trench and filled trench with gate oxide and polysilicon gate. A graphene nanowall (GNW) or carbon nanowall (CNW), as a barrier layer, was grown using the plasma enhanced chemical vapor deposition (PECVD) method. The TMBS device was then tested to determine the leakage current at 60 V under various temperature settings and compared against a conventional metal-based TMBS device using TiSi2 as a Schottky barrier layer. Current-voltage (I-V) measurement data were analyzed to obtain the Schottky barrier height, ideality factor, and series resistance (Rs) values. From I-V measurement, leakage current measured at 60 V and at 423 K of the GNW-TMBS and TiSi2-TMBS diodes were 0.0685 mA and above 10 mA, respectively, indicating that the GNW-TMBS diode has high operating temperature advantages. The Schottky barrier height, ideality factor, and series resistance based on dV/dln(J) vs. J for the GNW were calculated to be 0.703 eV, 1.64, and 35 ohm respectively.

Thermal Behavior of Large-Diameter Silicon Wafers during High-Temperature Rapid Thermal Processing in Single Wafer Furnace

2002 ◽  
Vol 41 (Part 1, No. 7A) ◽  
pp. 4442-4449 ◽  
Author(s):  
Woo Sik Yoo ◽  
Takashi Fukada ◽  
Ichiro Yokoyama ◽  
Kitaek Kang ◽  
Nobuaki Takahashi
Keyword(s):  
High Temperature ◽  
Thermal Behavior ◽  
Thermal Processing ◽  
Large Diameter ◽  
Rapid Thermal Processing ◽  
Silicon Wafers

Tungsten Silicide Zinc as a High Temperature Zinc Diffusion Source

1987 ◽  
Vol 92 ◽  
Author(s):  
D.L. Plumton
Keyword(s):  
High Temperature ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Halogen Lamp ◽  
Tungsten Silicide ◽  
Zn Concentration ◽  
Zinc Diffusion ◽  
Diffusion Source ◽  
Lamp System ◽  
Sputter Deposited

ABSTRACTA process for Zn diffusion into GaAs during rapid thermal processing has been developed using Zn doped tungsten silicide as the diffusion source. The WSi:Zn is a sputter deposited, solid source layer that undergoes capless annealing in a quartz-halogen lamp system. For a given time and temperature the diffusion of Zn into GaAs is controlled by both the Zn concentration and the W/Si ratio in the film. Tungsten-rich films are Zn concentration “independent” while Si-rich films are Zn concentration “dependent.” Changing the film composition allows shallow Zn diffusions at either a low or a high temperature. Deep Zn diffusions are possible through higher temperatures or longer anneal times for any given WSi:Zn composition.

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