Failure Mechanism Study for Low-k Device Bond Pad Crack Post Temperature Cycle

2019 ◽  
Author(s):  
Haiyan Liu ◽  
Xingshou Pang ◽  
Sean Xu
Keyword(s):  
Failure Mechanism ◽  
Temperature Cycle ◽  
Mechanism Study ◽  
Low K

Delamination-induced dielectric breakdown in Cu/low-k interconnects

2008 ◽  
Vol 23 (6) ◽  
pp. 1802-1808 ◽  
Author(s):  
T.L. Tan ◽  
C.L. Gan ◽  
A.Y. Du ◽  
Y.C. Tan ◽  
C.M. Ng
Keyword(s):  
Activation Energy ◽  
Failure Mechanism ◽  
Thermal Process ◽  
Dielectric Breakdown ◽  
Time Dependent ◽  
Bond Breaking ◽  
Capping Layer ◽  
Time Dependent Dielectric Breakdown ◽  
Potential Failure ◽  
Low K

Delamination at an interface with the weakest adhesion strength, which is found to be between the SiC(N) capping layer and the SiOCH low-k dielectric, is a potential failure mechanism contributing to time-dependent dielectric breakdown (TDDB) reliability. Bond breaking at that interface is believed to be driven by a field-enhanced thermal process and catalyzed by leakage current through the capping layer based on physical analyses and TDDB measurements. Delamination is found to be easier in terminated tips and corners than in parallel comb lines due to the layout orientation of the Cu lines. Moreover, TDDB activation energy Ea can be an indicator of the ease of delamination, whereby a lower Ea corresponds to an easier delamination.

Wet Clean Induce Pattern Collapse Mechanism Study

2012 ◽  
Vol 187 ◽  
pp. 253-256 ◽  
Author(s):  
C.C. Yang ◽  
C.C. Ko ◽  
H. Ou Yang ◽  
K.F. Chen ◽  
Y.Y. Peng ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
Surfactant Solution ◽  
Future Generation ◽  
Collapse Mechanism ◽  
Mechanism Study ◽  
Induce Pattern ◽  
Dry Etch ◽  
First Time ◽  
Low K

Pattern collapse phenomenon was first time observed in BEOL application with the integration of ultra low-k film scheme. With the dimension and pitch shrinkage, the pattern collapse defects are getting worse during wet clean process. In this study, the line collapse defects can be significantly reduced by adding surfactant solution to the rinse liquid. Moreover, higher aspect ratio (>4) will also deteriorate the collapse window. In addition, the kink or bowing trench profile will induce localized stress at the interface. Accordingly, optimization of both wet clean and dry etch process are the successful keys to solve line collapse issue toward future generation and beyond.

scholarly journals Failure Mechanism Study of Direct Action Solenoid Valve Based on Thermal-Structure Finite Element Model

IEEE Access ◽  
2020 ◽  
Vol 8 ◽  
pp. 58357-58368
Author(s):  
Jianfeng Li ◽  
Mingqing Xiao ◽  
Yao Sun ◽  
Guangshu Nie ◽  
Yaojun Chen ◽  
...  
Keyword(s):  
Finite Element ◽  
Finite Element Model ◽  
Failure Mechanism ◽  
Direct Action ◽  
Thermal Structure ◽  
Element Model ◽  
Solenoid Valve ◽  
Mechanism Study
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