DFT calculations: Stress dependence structural and band gap study of anatase and rutile TiO2

Author(s):  
Tariq Mahmood ◽  
Chuanbao Cao ◽  
Rashid Ahmed ◽  
Maqsood Ahmed ◽  
Ibrar Ahmed Zafar
RSC Advances ◽  
2020 ◽  
Vol 10 (40) ◽  
pp. 23743-23748
Author(s):  
Clark Zhang ◽  
Xuan Luo

DFT calculations revealed MAZnCl3 as a suitable replacement of MAPbI3, and revealed new low band-gap transition metal perovskites


2018 ◽  
Vol 20 (41) ◽  
pp. 26405-26413 ◽  
Author(s):  
Woo Gyu Han ◽  
Woon Bae Park ◽  
Satendra Pal Singh ◽  
Myoungho Pyo ◽  
Kee-Sun Sohn

A plausible configuration for Li0.5CoO2 was pinpointed using NSGA-III-assisted DFT calculations involving redox potential, band gap energy and magnetic moment.


2016 ◽  
Vol 4 (40) ◽  
pp. 15647-15654 ◽  
Author(s):  
Hugo Santos Silva ◽  
Isabel Fraga Domínguez ◽  
Anthony Perthué ◽  
Paul D. Topham ◽  
Pierre-Olivier Bussière ◽  
...  

A rapid and efficient method to identify the weak points of the complex chemical structure of low band gap (LBG) polymers when submitted to light exposure is reported.


2016 ◽  
Vol 4 (36) ◽  
pp. 8459-8465 ◽  
Author(s):  
Zhemi Xu ◽  
Zhimin Ao ◽  
Dewei Chu ◽  
Sean Li

Both experiments and DFT calculations show UV irradiation can tune the band gap of graphene. Most importantly, such a band gap transition is reversible and can be controlled by the alternative treatment of UV irradiation and dark storage.


2014 ◽  
Vol 2 (17) ◽  
pp. 3429-3438 ◽  
Author(s):  
David O. Scanlon ◽  
John Buckeridge ◽  
C. Richard A. Catlow ◽  
Graeme W. Watson

Using state-of-the-art hybrid DFT calculations we explain the defect chemistry of LaCuOSe, a poorly understood wide band gap p-type conductor.


2020 ◽  
Author(s):  
Konrad Siemensmeyer ◽  
Craig A. Peeples ◽  
Patrik Tholen ◽  
Bünyemin Çoşut ◽  
Gabriel Hanna ◽  
...  

<p>Herein is reported the first semiconducting and magnetic phosphonate metal-organic framework (MOF), TUB75, which contains a one-dimensional inorganic building unit composed of a zig-zag chain of corner-sharing copper dimers. The solid-state UV-Vis spectrum of TUB75 reveals the existence of a narrow band gap of 1.4 eV, which agrees well with the 1.77 eV one obtained from DFT calculations. Magnetization measurements show that TUB75 is composed of antiferromagnetically coupled copper dimer chains. Due to their rich structural chemistry and exceptionally high thermal/chemical stabilities, phosphonate MOFs like TUB75 may open new vistas in engineerable electrodes for supercapacitors. </p>


RSC Advances ◽  
2020 ◽  
Vol 10 (15) ◽  
pp. 8927-8935 ◽  
Author(s):  
Douglas Duarte de Vargas ◽  
Rogério José Baierle

Using density functional theory (DFT) calculations we investigate the structural and electronic properties of a heterogeneous van der Waals (vdW) structure consisting of silicene and NiI2 single layers.


2020 ◽  
Vol 12 (9) ◽  
pp. 1413-1419
Author(s):  
Hyunbok Lee ◽  
Younjoo Lee ◽  
Donghee Kang ◽  
Yeonjin Yi ◽  
Sang Wan Cho

Recently, organic photovoltaics (OPVs) have attracted attention as a next-generation energy source as their power conversion efficiency (PCE) has significantly improved. To increase the PCE of OPVs further, a fundamental understanding of material properties of a new organic semiconductor is highly important. Copper naphthalocyanine (CuNc) is composed of macrocyclic ligands with extended benzene rings of copper phthalocyanine (CuPc). Thus, it can be considered as a potential candidate for an efficient p-type organic semiconductor, similar to a well-known conventional p-type organic semiconductor CuPc. In this study, we investigated the electronic structure of thermally evaporated CuNc on indium tin oxide (ITO) wit in situ ultraviolet and X-ray photoelectron spectroscopy (UPS and XPS) and density functional theory (DFT) calculations. DFT calculations predict that CuNc has a lower ionization energy (IE) and band gap than CuPc. However, the IE measured by UPS and the band gap measured by UV-vis absorption of the deposited film were much higher than CuPc. Derived from the measured UPS, XPS spectra and DFT calculation results, we concluded that CuNc could be decomposed with thermal evaporation in a vacuum and the pyrrole-based material might be deposited on ITO. The increased IE and band gap were attributed to the disappearance of the highest occupied molecular orbital originating from the macrocyclic ligands with D4h symmetry. Therefore, the thermal evaporation method would not be a suitable method to obtain the CuNc film for device application, and the alternative solution process at low temperature would be more adequate.


Author(s):  
Chun Yuen HO ◽  
Chia Hsiang Li ◽  
Chao Ping Liu ◽  
Zhi-Quan Huang ◽  
Feng-Chuan Chuang ◽  
...  

Abstract CdO-ZnO alloys (CdxZn1-xO) exhibit a transformation from the wurtzite (WZ) to the rocksalt (RS) phase at a CdO composition of ~70% with a drastic change in the band gap and electrical properties. RS-CdxZn1-xO alloys (x>0.7) are particularly interesting for transparent conductor applications due to their wide band gap and high electron mobility. In this work, we synthesized RS-CdxZn1-xO alloys doped with different concentrations of In dopants and evaluated their electrical and optical properties. Experimental results are analyzed in terms of the amphoteric native defect model and compared directly to defect formation energies obtained by hybrid density functional theory (DFT) calculations. A saturation in electron concentration of ~7x1020cm-3 accompanied by a rapid drop in electron mobility is observed for the RS-CdxZn1-xO films with 0.7≤x<1 when the In dopant concentration [In] is larger than 3%. Hybrid DFT calculations confirm that the formation energy of metal vacancy acceptor defects is significantly lower in RS-CdxZn1-xO than in CdO, and hence limits the free carrier concentration. Mobility calculations reveal that due to the strong compensation by native defects, RS-CdxZn1-xO alloys exhibit a compensation ratio of >0.7 for films with x<0.8. As a consequence of the compensation by native defects, in heavily doped RS-CdxZn1-xO carrier-induced band filling effect is limited. Furthermore, the much lower mobility of the RS-CdxZn1-xO alloys also results in a higher resistivity and reduced transmittance in the near infra-red region (λ>1100 nm), making the material not suitable as transparent conductors for full spectrum photovoltaics.


2006 ◽  
Vol 88 (25) ◽  
pp. 251910 ◽  
Author(s):  
Keshu Wan ◽  
Alessandro Alan Porporati ◽  
Gan Feng ◽  
Hui Yang ◽  
Giuseppe Pezzotti

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