GaN-based Room Temperature Spintronics for Next Generation Low Power Consumption Electronic Devices

Author(s):  
Vishal Saravade ◽  
Amirhossein Ghods ◽  
Andrew P. Woode ◽  
Chuanle Zhou ◽  
Ian Ferguson
2021 ◽  
Vol 6 (32) ◽  
pp. 8338-8344
Author(s):  
Xingyan Shao ◽  
Shuo Wang ◽  
Leqi Hu ◽  
Tingting Liu ◽  
Xiaomei Wang ◽  
...  

2016 ◽  
Vol 108 (1) ◽  
pp. 011106 ◽  
Author(s):  
Lei Dong ◽  
Chunguang Li ◽  
Nancy P. Sanchez ◽  
Aleksander K. Gluszek ◽  
Robert J. Griffin ◽  
...  

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Mohammad Kazemi ◽  
Mark F. Bocko

Abstract Spin-orbit electronics (spin-orbitronics) has been widely discussed for enabling nonvolatile devices that store and process information with low power consumption. The potential of spin-orbitronics for memory and logic applications has been demonstrated by perpendicular anisotropy magnetic devices comprised of heavy-metal/ferromagnet or topological-insulator/ferromagnet bilayers, where the heavy metal or topological insulator provides an efficient source of spin current for manipulating information encoded in the bistable magnetization state of the ferromagnet. However, to reliably switch at room temperature, spin-orbit devices should be large to reduce thermal fluctuations, thereby compromising scalability, which in turn drastically increases power dissipation and degrades performance. Here, we show that the scalability is not a fundamental limitation in spin-orbitronics, and by investigating the interactions between the geometry of the ferromagnetic layer and components of the spin-orbit torque, we derive design rules that lead to deeply scalable spin-orbit devices. Furthermore, employing experimentally verified models, we propose deeply scaled spin-orbit devices exhibiting high-speed deterministic switching at room temperature. The proposed design principles are essential for design and implementation of very-large-scale-integration (VLSI) systems that provide high performance operation with low power consumption.


2011 ◽  
Author(s):  
S. Forouhar ◽  
C. Frez ◽  
K. J. Franz ◽  
A. Ksendzov ◽  
Y. Qiu ◽  
...  

2015 ◽  
Vol 719-720 ◽  
pp. 611-614
Author(s):  
Jia Rong Wang ◽  
Xiao Dong Xia ◽  
Zong Da Zhang ◽  
Han Yang

The successive approximation analog-to-digital converter (ADC) has been widely used in electronic devices due to the corresponding characteristics which are low cost, low power consumption, high accuracy and so on. This paper expounds a design of successive approximation A / D converter to show how to use TCL5615 which is a dual-channel serial 10-bit D/A converter (DAC) to make the conversion accuracy to reach 14-bit.


2010 ◽  
Vol 1257 ◽  
Author(s):  
James L Gole ◽  
Serdar Ozdemir ◽  
Sharka M Prokes ◽  
David M Dixon

AbstractActive nanostructures which provide unique transformations are being introduced to phase matched porous silicon (PS) nano/micropores to form a platform for low power consumption highly selective sensors and microreactors. TiO2-xNx photocatalysts have been formed in seconds at room temperature at the nanoscale via the direct nitration of anatase TiO2 nanocolloids. Tunability throughout the visible depends upon the degree of agglomeration and the ability to seed these nanoparticles with metal ions. Co metal ion seeding leads to the efficient room temperature phase transformation, of anatase to rutile TiO2, where normally much higher temperatures are required. Seeding of a properly nitridated TiO2 nanocolloid with transition metal ions (Co, Ni) allows for the enhancement of the infrared spectra of the TiO2-xNx nitridated titania surface in excess of 10-fold, providing a means to analyze for minor contaminants and intermediates. Evidence for nitrogen fixation is found in Fe treated systems. The TiO2-xNx systems act as visible light absorbing photocatalyts. These photocatalysts and additional nanostructured metal oxides can be placed on the surface of PS-based sensor and microreactor configurations to greatly improve the interface response.


2020 ◽  
Vol 12 (1) ◽  
Author(s):  
Nan Wang ◽  
Xudong Luo ◽  
Lu Han ◽  
Zhiqiang Zhang ◽  
Renyun Zhang ◽  
...  

AbstractMultiferroic nanomaterials have attracted great interest due to simultaneous two or more properties such as ferroelectricity, ferromagnetism, and ferroelasticity, which can promise a broad application in multifunctional, low-power consumption, environmentally friendly devices. Bismuth ferrite (BiFeO3, BFO) exhibits both (anti)ferromagnetic and ferroelectric properties at room temperature. Thus, it has played an increasingly important role in multiferroic system. In this review, we systematically discussed the developments of BFO nanomaterials including morphology, structures, properties, and potential applications in multiferroic devices with novel functions. Even the opportunities and challenges were all analyzed and summarized. We hope this review can act as an updating and encourage more researchers to push on the development of BFO nanomaterials in the future.


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