Alloy: Parallel-serial memory channel architecture for single-chip heterogeneous processor systems

Author(s):  
Hao Wang ◽  
Chang-Jae Park ◽  
Gyung-su Byun ◽  
Jung Ho Ahn ◽  
Nam Sung Kim
Author(s):  
Katherine Guérard ◽  
Sébastien Tremblay

In serial memory for spatial information, some studies showed that recall performance suffers when the distance between successive locations increases relatively to the size of the display in which they are presented (the path length effect; e.g., Parmentier et al., 2005) but not when distance is increased by enlarging the size of the display (e.g., Smyth & Scholey, 1994). In the present study, we examined the effect of varying the absolute and relative distance between to-be-remembered items on memory for spatial information. We manipulated path length using small (15″) and large (64″) screens within the same design. In two experiments, we showed that distance was disruptive mainly when it is varied relatively to a fixed reference frame, though increasing the size of the display also had a small deleterious effect on recall. The insertion of a retention interval did not influence these effects, suggesting that rehearsal plays a minor role in mediating the effects of distance on serial spatial memory. We discuss the potential role of perceptual organization in light of the pattern of results.


2004 ◽  
Author(s):  
Fabrice B. R. Parmentier ◽  
Greg Elford ◽  
Dylan M. Jones

MRS Bulletin ◽  
1997 ◽  
Vol 22 (10) ◽  
pp. 19-27 ◽  
Author(s):  
Wei William Lee ◽  
Paul S. Ho

Continuing improvement of microprocessor performance historically involves a decrease in the device size. This allows greater device speed, an increase in device packing density, and an increase in the number of functions that can reside on a single chip. However higher packing density requires a much larger increase in the number of interconnects. This has led to an increase in the number of wiring levels and a reduction in the wiring pitch (sum of the metal line width and the spacing between the metal lines) to increase the wiring density. The problem with this approach is that—as device dimensions shrink to less than 0.25 μm (transistor gate length)—propagation delay, crosstalk noise, and power dissipation due to resistance-capacitance (RC) coupling become significant due to increased wiring capacitance, especially interline capacitance between the metal lines on the same metal level. The smaller line dimensions increase the resistivity (R) of the metal lines, and the narrower interline spacing increases the capacitance (C) between the lines. Thus although the speed of the device will increase as the feature size decreases, the interconnect delay becomes the major fraction of the total delay and limits improvement in device performance.To address these problems, new materials for use as metal lines and interlayer dielectrics (ILD) as well as alternative architectures have been proposed to replace the current Al(Cu) and SiO2 interconnect technology.


Impact ◽  
2019 ◽  
Vol 2019 (10) ◽  
pp. 44-46
Author(s):  
Masato Edahiro ◽  
Masaki Gondo

The pace of technology's advancements is ever-increasing and intelligent systems, such as those found in robots and vehicles, have become larger and more complex. These intelligent systems have a heterogeneous structure, comprising a mixture of modules such as artificial intelligence (AI) and powertrain control modules that facilitate large-scale numerical calculation and real-time periodic processing functions. Information technology expert Professor Masato Edahiro, from the Graduate School of Informatics at the Nagoya University in Japan, explains that concurrent advances in semiconductor research have led to the miniaturisation of semiconductors, allowing a greater number of processors to be mounted on a single chip, increasing potential processing power. 'In addition to general-purpose processors such as CPUs, a mixture of multiple types of accelerators such as GPGPU and FPGA has evolved, producing a more complex and heterogeneous computer architecture,' he says. Edahiro and his partners have been working on the eMBP, a model-based parallelizer (MBP) that offers a mapping system as an efficient way of automatically generating parallel code for multi- and many-core systems. This ensures that once the hardware description is written, eMBP can bridge the gap between software and hardware to ensure that not only is an efficient ecosystem achieved for hardware vendors, but the need for different software vendors to adapt code for their particular platforms is also eliminated.


Micromachines ◽  
2021 ◽  
Vol 12 (8) ◽  
pp. 879
Author(s):  
Ruiquan He ◽  
Haihua Hu ◽  
Chunru Xiong ◽  
Guojun Han

The multilevel per cell technology and continued scaling down process technology significantly improves the storage density of NAND flash memory but also brings about a challenge in that data reliability degrades due to the serious noise. To ensure the data reliability, many noise mitigation technologies have been proposed. However, they only mitigate one of the noises of the NAND flash memory channel. In this paper, we consider all the main noises and present a novel neural network-assisted error correction (ANNAEC) scheme to increase the reliability of multi-level cell (MLC) NAND flash memory. To avoid using retention time as an input parameter of the neural network, we propose a relative log-likelihood ratio (LLR) to estimate the actual LLR. Then, we transform the bit detection into a clustering problem and propose to employ a neural network to learn the error characteristics of the NAND flash memory channel. Therefore, the trained neural network has optimized performances of bit error detection. Simulation results show that our proposed scheme can significantly improve the performance of the bit error detection and increase the endurance of NAND flash memory.


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