Thermal Stability of COFEB-MGO Free Layer with Perpendicular Anisotropy in Different Size of Devices

2016 ◽  
Author(s):  
Hung-Yi Tsai ◽  
Chun-Liang Yang ◽  
Chih-Huang Lai
Keyword(s):  
Thermal Stability ◽  
Perpendicular Anisotropy ◽  
Free Layer ◽  
Thermal Stability Of

Field-Free switching of perpendicular magnetization through spin-orbit torque in FePt/[TiN/NiFe]5 multilayers

Nanoscale ◽  
2021 ◽  
Author(s):  
Chao Sun ◽  
Yiyi Jiao ◽  
Chao Zuo ◽  
Xin Hu ◽  
Ying Tao ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Magnetic Materials ◽  
Spin Orbit ◽  
Perpendicular Anisotropy ◽  
Perpendicular Magnetization ◽  
Magnetic Switching ◽  
Thermal Stability Of

In order to maintain thermal stability of SOT devices with nanoscale size, it is desirable to achieve current induced magnetic switching in magnetic materials with high perpendicular anisotropy. In the...

Reversal and thermal stability of ordered moments in nano-rings of perpendicular anisotropy Co/Pd multilayers

2015 ◽  
Vol 48 (29) ◽  
pp. 295005 ◽  
Author(s):  
M Kaur ◽  
M Raju ◽  
D Varandani ◽  
Anurag Gupta ◽  
T D Senguttuvan ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Perpendicular Anisotropy ◽  
Thermal Stability Of

Influence of a composite free layer structure on thermal stability of perpendicular magnetic tunnel junction

2018 ◽  
Vol 124 (6) ◽  
pp. 063903 ◽  
Author(s):  
Witold Skowroński ◽  
Stanisław Łazarski ◽  
Piotr Rzeszut ◽  
Sławomir Ziętek ◽  
Jakub Chęciński ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Tunnel Junction ◽  
Layer Structure ◽  
Magnetic Tunnel Junction ◽  
Free Layer ◽  
Thermal Stability Of

Origin of Thermal Stability of IrMn Based Specular Spin Valve Type GMR Multilayer

2004 ◽  
Vol 449-452 ◽  
pp. 1065-1068 ◽  
Author(s):  
S.Y. Yoon ◽  
D.H. Lee ◽  
K.H. Jeong ◽  
D.H. Yoon ◽  
Su Jeong Suh
Keyword(s):  
Thermal Stability ◽  
Oxide Layer ◽  
Thermal Annealing ◽  
Diffusion Barrier ◽  
Spin Valve ◽  
Free Layer ◽  
Valve System ◽  
Nano Oxide ◽  
Thermal Stability Of

By using the sputtering process, we made the IrMn based specular spin valve system, whose nano-oxide layer (NOL) was formed by natural oxidation. After thermal annealing at 305 and 410 °C, the thermal stability of the specular spin valve was observed. We found that the highest magnetoresistance (MR) ratio of about 12 % MR was produced after optimum annealing at 305 °C but the sample annealed at 410 °C also had a high MR ratio about 10 %. It is superior to other studies at this temperature. Based on the AES and XPS results, we could conclude that this enhanced thermal stability was due to the stable Cu layer between the pinned layer and free layer and to the NOL as a diffusion barrier for the Mn.

The Ordered Phase Formation in Ti-Al-Ga Alloys

1970 ◽  
Vol 28 ◽  
pp. 440-441
Author(s):  
Shiro Fujishiro ◽  
Harold L. Gegel
Keyword(s):  
Thermal Stability ◽  
High Temperature ◽  
Titanium Alloys ◽  
Growth Kinetics ◽  
Stoichiometric Composition ◽  
Good Potential ◽  
Alpha Titanium ◽  
Cold Rolled ◽  
Kinetics Of ◽  
Thermal Stability Of

Ordered-alpha titanium alloys having a DO19 type structure have good potential for high temperature (600°C) applications, due to the thermal stability of the ordered phase and the inherent resistance to recrystallization of these alloys. Five different Ti-Al-Ga alloys consisting of equal atomic percents of aluminum and gallium solute additions up to the stoichiometric composition, Ti3(Al, Ga), were used to study the growth kinetics of the ordered phase and the nature of its interface.The alloys were homogenized in the beta region in a vacuum of about 5×10-7 torr, furnace cooled; reheated in air to 50°C below the alpha transus for hot working. The alloys were subsequently acid cleaned, annealed in vacuo, and cold rolled to about. 050 inch prior to additional homogenization

Microstructure studies of tungsten silicide schottky contacts on Gaas

1987 ◽  
Vol 45 ◽  
pp. 328-329
Author(s):  
Yih-Cheng Shih ◽  
E. L. Wilkie
Keyword(s):  
Thermal Stability ◽  
Field Effect Transistors ◽  
Schottky Contact ◽  
Schottky Contacts ◽  
Excellent Thermal Stability ◽  
Barrier Heights ◽  
Gaas Substrates ◽  
Film Adhesion ◽  
Threshold Voltages ◽  
Thermal Stability Of

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.

Thermal stability of Al-Cu-Fe icosahedral alloys

1991 ◽  
Vol 1 (12) ◽  
pp. 1823-1836 ◽  
Author(s):  
M. Bessière ◽  
A. Quivy ◽  
S. Lefebvre ◽  
J. Devaud-Rzepski ◽  
Y. Calvayrac
Keyword(s):  
Thermal Stability ◽  
Thermal Stability Of
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