Computing the six degrees of freedom of light emitting diodes in a monocular image

The active development of robotics requires increasingly complex remote control devices. The remote control devices are increasingly large, complex, and expensive. They decrease economic efficiency of robotics and increase their price. The scientific task is the research into possibility of applying optical ministicks on the basis of light emitting diodes as the new type basic multifunctional controls of unified humanmachine interfaces allowing us to control commonly known robotic equipment types using identical devices. During the research original ergonomic methods of purposeful combination of two ministicks on two actuating levers were used so that to provide convenience of tactile control of various robots without visual contact with controls. As a result of the research, new controls were created and patented. They became known as “polyjoysticks” (patent of Russian Federation No. 2497177) and allow controlling engineering facilities having up to 20 degrees of freedom which exceeds the similar parameters of known controls by factor of 3 to 5. Due to combined use of optical ministicks, two polyjoysticks and a video mask, a new generalpurpose generation humanmachine interface was created. It allows controlling various robots and vehicles, from tractor to aircraft. The discussion of the obtained results was carried out by comparing them with parameters of control panels of different robotics systems. The analysis of the comparison results has shown that the controls based on polyjoysticks and digital optical ministicks on the basis of light emitting diodes have the best indices in terms of implemented among known control devices, in terms of ratio of functionality to weight and volume of the devices. New interfaces have already been applied for developing multiagent robotic system control system for fire forest extinguishing.

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Influence of the Carrier Mobility and Charge Accumulation in Interfacial Layers on Deterioration in Organic Light-emitting Diodes

IEEJ Transactions on Fundamentals and Materials ◽

10.1541/ieejfms.137.291 ◽

2017 ◽

Vol 137 (5) ◽

pp. 291-297

Author(s):

Hirofumi Nakamura ◽

Miki Kuribayashi ◽

Chihaya Adachi

Keyword(s):

Carrier Mobility ◽

Light Emitting Diodes ◽

Organic Light Emitting Diodes ◽

Charge Accumulation ◽

Light Emitting ◽

Interfacial Layers ◽

Organic Light

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Injecting Inter-Layers and the Built-in Potential of Blue Polymer Light-Emitting Diodes

MRS Proceedings ◽

10.1557/proc-660-jj6.9 ◽

2000 ◽

Vol 660 ◽

Author(s):

Thomas M. Brown ◽

Ian S. Millard ◽

David J. Lacey ◽

Jeremy H. Burroughes ◽

Richard H. Friend ◽

...

Keyword(s):

Indium Tin Oxide ◽

Light Emitting Diodes ◽

Basic Structure ◽

Thin Layers ◽

Carrier Injection ◽

Semiconducting Polymer ◽

Light Emitting ◽

Physical Mechanisms ◽

Organic Solid ◽

Polymer Light Emitting Diodes

ABSTRACTThe semiconducting-polymer/injecting-electrode heterojunction plays a crucial part in the operation of organic solid state devices. In polymer light-emitting diodes (LEDs), a common fundamental structure employed is Indium-Tin-Oxide/Polymer/Al. However, in order to fabricate efficient devices, alterations to this basic structure have to be carried out. The insertion of thin layers, between the electrodes and the emitting polymer, has been shown to greatly enhance LED performance, although the physical mechanisms underlying this effect remain unclear. Here, we use electro-absorption measurements of the built-in potential to monitor shifts in the barrier height at the electrode/polymer interface. We demonstrate that the main advantage brought about by inter-layers, such as poly(ethylenedioxythiophene)/poly(styrene sulphonic acid) (PEDOT:PSS) at the anode and Ca, LiF and CsF at the cathode, is a marked reduction of the barrier to carrier injection. The electro- absorption results also correlate with the electroluminescent characteristics of the LEDs.

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Low-Temperature Operation of Green, Blue and UV InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes

MRS Proceedings ◽

10.1557/proc-764-c5.5 ◽

2003 ◽

Vol 764 ◽

Author(s):

X. A. Cao ◽

S. F. LeBoeuf ◽

J. L. Garrett ◽

A. Ebong ◽

L. B. Rowland ◽

...

Keyword(s):

Quantum Well ◽

Light Emitting Diodes ◽

Multiple Quantum Well ◽

Light Output ◽

Localized States ◽

Multiple Quantum ◽

Nonradiative Recombination ◽

Light Emitting ◽

Temperature Range ◽

Green Leds

Absract:Temperature-dependent electroluminescence (EL) of InGaN/GaN multiple-quantum-well light-emitting diodes (LEDs) with peak emission energies ranging from 2.3 eV (green) to 3.3 eV (UV) has been studied over a wide temperature range (5-300 K). As the temperature is decreased from 300 K to 150 K, the EL intensity increases in all devices due to reduced nonradiative recombination and improved carrier confinement. However, LED operation at lower temperatures (150-5 K) is a strong function of In ratio in the active layer. For the green LEDs, emission intensity increases monotonically in the whole temperature range, while for the blue and UV LEDs, a remarkable decrease of the light output was observed, accompanied by a large redshift of the peak energy. The discrepancy can be attributed to various amounts of localization states caused by In composition fluctuation in the QW active regions. Based on a rate equation analysis, we find that the densities of the localized states in the green LEDs are more than two orders of magnitude higher than that in the UV LED. The large number of localized states in the green LEDs are crucial to maintain high-efficiency carrier capture at low temperatures.

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