Comparative thermal noise analysis of DG MOSFET using SiO2, SiC-SiO2, Si3N4-SiO2, SiO2-Al2O3 as dielectric layer
2016 ◽
Vol 44
(12)
◽
pp. 2101-2113
◽
Keyword(s):
2014 ◽
Vol 24
(01)
◽
pp. 1550010
◽
2007 ◽
Vol 5
(4)
◽
pp. 479-482
◽
2015 ◽
Vol 645-646
◽
pp. 624-629
Keyword(s):
2011 ◽
Vol 58-60
◽
pp. 2074-2078
Keyword(s):
1995 ◽
Vol 117
(4)
◽
pp. 405-410
◽
Keyword(s):