Influence of air exposure time on bonding strength in Au-Au surface activated wafer bonding

2015 ◽  
Author(s):  
Ken Okumura ◽  
Eiji Higurashi ◽  
Tadatomo Suga ◽  
Kei Hagiwara
Keyword(s):  
Exposure Time ◽  
Wafer Bonding ◽  
Bonding Strength ◽  
Air Exposure

Relationship Between Air Exposure Time and Water Relations of Cut Roses

2019 ◽  
Vol 27 (4) ◽  
pp. 267-277
Author(s):  
Suong Tuyet Thi Ha ◽  
Minjung Kwon ◽  
Toan Khac Nguyen ◽  
Jin-Hee Lim
Keyword(s):  
Water Relations ◽  
Exposure Time ◽  
Air Exposure

The Thermal Stability of Fluorine Doped Silicon Oxide Films Formed by Ecrcvd With SiF4 and O2 Gases

1996 ◽  
Vol 443 ◽  
Author(s):  
Seoghyeong Lee ◽  
Jae-Yoon Yoo ◽  
Jong-Wan Park
Keyword(s):  
Thermal Stability ◽  
Dielectric Properties ◽  
Plasma Treatment ◽  
Exposure Time ◽  
Moisture Absorption ◽  
Silicon Oxide ◽  
Reliability Test ◽  
Air Exposure ◽  
Doped Silicon ◽  
Thermal Stability Of

AbstractThe reliability of SiOF films for intermetal dielectrics in multilevel interconnections of ULSIs is investigated. SiOF films were deposited by ECRCVD using H-free source gases, i.e., SiF4 and O2. The effect of post plasma treatment on the moisture absorption and dielectric properties of SiOF films were carried out in terms of air exposure time. The reliability test of Cu / TiN / SiOF / Si specimen was carried out in terms of temperatures by RTA in N2 ambient. After O2 plasma treatment, no appreciable peak directly related to moisture absorption was detected. The C-V characteristics of the O2 plasma treated SiOF film showed that the film remained to hold the sound dielectric properties even after boiling treatment. The Cu / TiN / SiOF / Si system was found to be reliable up to 600 °C.

Inter-wafer bonding strength characterization by laser-induced shock waves

2012 ◽  
Vol 111 (9) ◽  
pp. 094902 ◽  
Author(s):  
George Youssef ◽  
Caroline Moulet ◽  
Mark S. Goorsky ◽  
Vijay Gupta
Keyword(s):  
Shock Waves ◽  
Wafer Bonding ◽  
Bonding Strength ◽  
Strength Characterization

A New Evaluation Method of Silicon Wafer Bonding Interfaces and Bonding Strength by KOH Etching

1992 ◽  
Vol 31 (Part 1, No. 4) ◽  
pp. 969-974 ◽  
Author(s):  
Kiyoshi MITani ◽  
Diego Feijoo ◽  
Giho Cha ◽  
Ulrich M. Gösele
Keyword(s):  
Silicon Wafer ◽  
Wafer Bonding ◽  
Bonding Strength ◽  
Evaluation Method ◽  
Koh Etching
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