The Thermal Stability of Fluorine Doped Silicon Oxide Films Formed by Ecrcvd With SiF4 and O2 Gases

1996 ◽  
Vol 443 ◽  
Author(s):  
Seoghyeong Lee ◽  
Jae-Yoon Yoo ◽  
Jong-Wan Park
Keyword(s):  
Thermal Stability ◽  
Dielectric Properties ◽  
Plasma Treatment ◽  
Exposure Time ◽  
Moisture Absorption ◽  
Silicon Oxide ◽  
Reliability Test ◽  
Air Exposure ◽  
Doped Silicon ◽  
Thermal Stability Of

AbstractThe reliability of SiOF films for intermetal dielectrics in multilevel interconnections of ULSIs is investigated. SiOF films were deposited by ECRCVD using H-free source gases, i.e., SiF4 and O2. The effect of post plasma treatment on the moisture absorption and dielectric properties of SiOF films were carried out in terms of air exposure time. The reliability test of Cu / TiN / SiOF / Si specimen was carried out in terms of temperatures by RTA in N2 ambient. After O2 plasma treatment, no appreciable peak directly related to moisture absorption was detected. The C-V characteristics of the O2 plasma treated SiOF film showed that the film remained to hold the sound dielectric properties even after boiling treatment. The Cu / TiN / SiOF / Si system was found to be reliable up to 600 °C.

Effect of Post Plasma Treatment on Reliability and Dielectric Properties of SiOF Films Deposited by ECRCVD With SiF4 and O2

1997 ◽  
Vol 476 ◽  
Author(s):  
Seoghyeong Lee ◽  
Jae-Yoon Yoo ◽  
Kyunghui Oh ◽  
Jong-Wan Park
Keyword(s):  
Dielectric Properties ◽  
Plasma Treatment ◽  
Silicon Oxide ◽  
Treatment Time ◽  
Relative Dielectric Constant ◽  
Breakdown Field ◽  
Plasma Treatment Time ◽  
Breakdown Field Strength ◽  
Thermal Stability Of

AbstractThe effect of post plasma treatment on dielectric properties and reliability of fluorine doped silicon oxide (SiOF) films were investigated by measuring their C-V and I-V characteristics, XPS, AFM, and AES. The post plasma treatment of SiOF films was carried out in-situ at 300 °C in the deposition chamber. In this research, when the post plasma treatment time increased, we obtained the following results: (1) The etch rate of SiOF films decreased from 80Å/sec to 10Å/sec. (2) Surface roughness of the plasma treated SiOF films was increased due to the ion bombardment effect of the plasma. (3) The refractive index and relative dielectric constant increased from 1.391 to 1.461 and 3.14 to 3.9, respectively, due to the changes of surface chemistry by the post plasma treatment. (4) The leakage current density of SiOF films prepared by ECRCVD using SiF4 and O2 was less than 1 × 10−9A/cm2. (5) The breakdown field strength increased from 3.5 MV/cm to 8 MV/cm. (6) The thermal stability of the Cu/TiN/SiOF/Si system remained stable up to 600 °C.

Thermal stability of the phases formed in the near surface layers of unalloyed steels by nitrogen pulsed plasma treatment

Vacuum ◽  
2007 ◽  
Vol 81 (10) ◽  
pp. 1188-1190 ◽  
Author(s):  
Bożena Sartowska ◽  
Jerzy Piekoszewski ◽  
Lech Waliś ◽  
Jacek Stanisławski ◽  
Lech Nowicki ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Plasma Treatment ◽  
Pulsed Plasma ◽  
Surface Layers ◽  
Near Surface ◽  
Unalloyed Steels ◽  
Thermal Stability Of

Thermal stability of supersaturated oxygen-doped silicon epitaxial films

1990 ◽  
Vol 44 (2) ◽  
pp. 115-119 ◽  
Author(s):  
A.E.M.J. Fischer ◽  
W.F.J. Slijkerman ◽  
J.F. Van Der Veen ◽  
I. Ohdomari
Keyword(s):  
Thermal Stability ◽  
Epitaxial Films ◽  
Doped Silicon ◽  
Thermal Stability Of

Covalent polymer functionalization of graphene for improved dielectric properties and thermal stability of epoxy composites

2016 ◽  
Vol 122 ◽  
pp. 27-35 ◽  
Author(s):  
Yan-Jun Wan ◽  
Wen-Hu Yang ◽  
Shu-Hui Yu ◽  
Rong Sun ◽  
Ching-Ping Wong ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Dielectric Properties ◽  
Epoxy Composites ◽  
Thermal Stability Of

Improved Thermal Stability of Ag Thin Films by Organic Subnanolayer at Interface with Silicon Oxide Layer

2009 ◽  
Vol 48 (11) ◽  
pp. 118002 ◽  
Author(s):  
Midori Kawamura ◽  
Terumasa Fudei ◽  
Yoshio Abe ◽  
Katsutaka Sasaki
Keyword(s):  
Thin Films ◽  
Thermal Stability ◽  
Oxide Layer ◽  
Silicon Oxide ◽  
Silicon Oxide Layer ◽  
Thermal Stability Of

scholarly journals Investigation on the Properties of PMMA/Reactive Halloysite Nanocomposites Based on Halloysite with Double Bonds

Polymers ◽  
2018 ◽  
Vol 10 (8) ◽  
pp. 919 ◽  
Author(s):  
Shiwei Chen ◽  
Zhizhou Yang ◽  
Fuzhong Wang
Keyword(s):  
Mechanical Property ◽  
Thermal Stability ◽  
Molecular Weight ◽  
Polymer Nanocomposites ◽  
Moisture Absorption ◽  
Young Modulus ◽  
Double Bonds ◽  
Scanning Calorimetry ◽  
General Applicability ◽  
Thermal Stability Of

PMMA/reactive halloysite nanocomposites were firstly prepared using reactive halloysite with double bonds. The halloysite was functionalized to improve its dispersion in the polymer matrix. The reactive halloysite could increase the molecular weight of PMMA. The molecular distribution of PMMA/reactive halloysite nanocomposite was more uniform than that of PMMA. The moisture absorption of PMMA/reactive halloysite nanocomposite increased with the addition of the reactive halloysite. Thermogravimetric analysis (TGA) and differential scanning calorimetry (DSC) confirmed that the thermal stability of PMMA/reactive halloysite nanocomposites was greatly enhanced. Significant improvement in the mechanical property of PMMA nanocomposites was achieved by the addition of 3 wt % reactive halloysite. A 31.1% increase in tensile strength and a 64.2% increase in Young’ modulus of the nanocomposites with 3 wt % of the reactive halloysite were achieved. Finally, the formation mechanism of PMMA/reactive halloysites nanocomposites was proposed. This approach demonstrated the potential for general applicability to other polymer nanocomposites.

Low-Temperature Deposition of Amorphous Carbon Films for Surface Passivation of Carbon-Doped Silicon Oxide

2007 ◽  
Vol 26-28 ◽  
pp. 645-648 ◽  
Author(s):  
Keisuke Yamaoka ◽  
Yoshikazu Terai ◽  
Naomichi Okada ◽  
Takashi Yamaguchi ◽  
Yuji Yoshizako ◽  
...  
Keyword(s):  
Low Temperature ◽  
Amorphous Carbon ◽  
Moisture Absorption ◽  
Surface Passivation ◽  
Silicon Oxide ◽  
Carbon Films ◽  
Rf Power ◽  
Temperature Plasma ◽  
Carbon Doped ◽  
Doped Silicon

Low-temperature plasma-enhanced chemical vapor deposition of amorphous carbon (a-C:H) films was investigated for surface passivation of carbon-doped silicon oxide (SiOCH) films. The a-C:H films were deposited using CH4 and Ar gases at 40–65°C. FT-IR results showed that the deposited films are a-C:H which incorporates hydrocarbon groups. In current−voltage measurements, the a-C:H showed a low leakage current of ~10–10 A/cm2 in air, indicating that the a-C:H films have a potential as a surface passivation layer to prevent moisture absorption in air. The insulating properties of room-temperature deposited SiOCH covered by the a-C:H strongly depended on radio frequency (RF) power in the SiOCH deposition. In the SiOCH film deposited at high RF power of 200 W, the resistivity in air was improved by the a-C:H passivation.

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