Modeling of positional plasma characteristics by inserting body tube of optical emission spectroscopy for plasma assisted atomic layer deposition system

2015 ◽  
Author(s):  
In Joong Kim ◽  
Yong Hyeon Shin ◽  
Ilgu Yun
Keyword(s):  
Atomic Layer Deposition ◽  
Emission Spectroscopy ◽  
Optical Emission Spectroscopy ◽  
Optical Emission ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Plasma Characteristics

scholarly journals Chemical Reaction and Ion Bombardment Effects of Plasma Radicals on Optoelectrical Properties of SnO2 Thin Films via Atomic Layer Deposition

Materials ◽  
2021 ◽  
Vol 14 (3) ◽  
pp. 690
Author(s):  
Pao-Hsun Huang ◽  
Zhi-Xuan Zhang ◽  
Chia-Hsun Hsu ◽  
Wan-Yu Wu ◽  
Chien-Jung Huang ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Optical Loss ◽  
Optical Emission ◽  
Hall Effect Measurement ◽  
Atomic Layer ◽  
Film Structure ◽  
Plasma Power ◽  
Layer Deposition ◽  
Sno2 Thin Films

In this study, the effect of radical intensity on the deposition mechanism, optical, and electrical properties of tin oxide (SnO2) thin films is investigated. The SnO2 thin films are prepared by plasma-enhanced atomic layer deposition with different plasma power from 1000 to 3000 W. The experimental results show that plasma contains different amount of argon radicals (Ar*) and oxygen radicals (O*) with the increased power. The three deposition mechanisms are indicated by the variation of Ar* and O* intensities evidenced by optical emission spectroscopy. The adequate intensities of Ar* and O* are obtained by the power of 1500 W, inducing the highest oxygen vacancies (OV) ratio, the narrowest band gap, and the densest film structure. The refractive index and optical loss increase with the plasma power, possibly owing to the increased film density. According to the Hall effect measurement results, the improved plasma power from 1000 to 1500 W enhances the carrier concentration due to the enlargement of OV ratio, while the plasma powers higher than 1500 W further cause the removal of OV and the significant bombardment from Ar*, leading to the increase of resistivity.

Effect of Dielectric Conductivity on Micro-Electrical Discharge Machining Plasma Characteristics Using Optical Emission Spectroscopy

2018 ◽  
Vol 6 (3) ◽  
Author(s):  
Soham S. Mujumdar ◽  
Davide Curreli ◽  
Shiv G. Kapoor
Keyword(s):  
Electron Density ◽  
Electrical Discharge ◽  
Emission Spectroscopy ◽  
Optical Emission Spectroscopy ◽  
Electrical Discharge Machining ◽  
Plasma Temperature ◽  
Optical Emission ◽  
Micro Electrical Discharge Machining ◽  
Plasma Characteristics ◽  
Dielectric Conductivity

Electrical conductivity of the dielectric liquid has been shown to play main role in discharge initiation and electrical breakdown as revealed by several modeling and experimental studies on electrical discharges in liquids. However, there has been lack of systematic efforts to evaluate how dielectric conductivity affects the micro-electrical discharge machining (micro-EDM) process, in particular. Experimental investigation has been carried out to understand the effect of dielectric conductivity on micro-EDM plasma characteristics using optical emission spectroscopy. Plasma temperature and electron density estimations have been obtained at five levels of electrical conductivity of water. It is found that while the plasma temperature shows a marginal decrease, electron density of the plasma increases with an increase in the conductivity. At increased electron density, a higher heat flux at anode can be expected resulting in increased material erosion.

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