Synthetic and formation mechanism of Cu6Sn5 single-crystal layer on Cu pad for UBM application

2013 ◽  
Author(s):  
Zhihao Zhang ◽  
Huijun Cao ◽  
Mingyu Li
Keyword(s):  
Single Crystal ◽  
Formation Mechanism ◽  
Crystal Layer ◽  
Single Crystal Layer

Study on Epitaxial Growth of CeO2 (110)/Si(100) in Conjunction with Substrate Off-Orientation

1994 ◽  
Vol 341 ◽  
Author(s):  
Tomoyasu Inoue ◽  
Yasuhiro Yamamoto ◽  
Masataka Satoh ◽  
Tetsu Ohsuna ◽  
Hiroaki Myoren ◽  
...  
Keyword(s):  
Single Crystal ◽  
Epitaxial Growth ◽  
Thick Layer ◽  
Crystalline Quality ◽  
Orientation Effect ◽  
Layer Surface ◽  
Crystal Layer ◽  
Layer Formation ◽  
20 Nm ◽  
Single Crystal Layer

AbstractThe substrate off-orientation effect is systematically studied on epitaxial CeO2(110) layers on Si(100), and the crystalline quality is significantly improved by enhancement of domains whose 〈110〉 is perpendicular to the offset-direction (Si〈110〉). AFM measurements indicate that the CeO2 layer surface consists of stripe-shaped facets and that their size is typically 100˜200 nm long, 20 nm wide and ∼3 nm high for a 150 nm-thick layer. RHEED and XTEM reveal that CeO2〈110〉 axis is inclined from wafer normal by the off-angle. The step arrangement at Si surface observed by XTEM relates closely to the inclination of the facets. It is found that off-orientation (≥∼,2.5°) leads to single crystal layer formation. RBS analyses verify that the crystalline quality is significantly improved, especially at the surface. The best result is obtained at the off-angle of 2.5°.

Volatilize-Controlled Oriented Growth of the Single-Crystal Layer for Organic Field-Effect Transistors

Langmuir ◽  
2014 ◽  
Vol 30 (40) ◽  
pp. 12082-12088 ◽  
Author(s):  
Haoyan Zhao ◽  
Dong Li ◽  
Guifang Dong ◽  
Lian Duan ◽  
Xiaohui Liu ◽  
...  
Keyword(s):  
Single Crystal ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Crystal Layer ◽  
Organic Field Effect Transistors ◽  
Oriented Growth ◽  
Single Crystal Layer
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