InGaAs/InP double heterostructure bipolar transistors for high speed and high voltage driver circuit application

Author(s):  
R. Bauknecht ◽  
H. Duran ◽  
M. Schmatz ◽  
H. Melchior
1993 ◽  
Vol 62 (19) ◽  
pp. 2372-2374 ◽  
Author(s):  
K. Kurishima ◽  
H. Nakajima ◽  
T. Kobayashi ◽  
Y. Matsuoka ◽  
T. Ishibashi

1987 ◽  
Vol 8 (6) ◽  
pp. 282-284 ◽  
Author(s):  
R.N. Nottenburg ◽  
J.-C. Bischoff ◽  
M.B. Panish ◽  
H. Temkin

Author(s):  
N. David Theodore ◽  
Donald Y.C Lie ◽  
J. H. Song ◽  
Peter Crozier

SiGe is being extensively investigated for use in heterojunction bipolar-transistors (HBT) and high-speed integrated circuits. The material offers adjustable bandgaps, improved carrier mobilities over Si homostructures, and compatibility with Si-based integrated-circuit manufacturing. SiGe HBT performance can be improved by increasing the base-doping or by widening the base link-region by ion implantation. A problem that arises however is that implantation can enhance strain-relaxation of SiGe/Si.Furthermore, once misfit or threading dislocations result, the defects can give rise to recombination-generation in depletion regions of semiconductor devices. It is of relevance therefore to study the damage and anneal behavior of implanted SiGe layers. The present study investigates the microstructural behavior of phosphorus implanted pseudomorphic metastable Si0.88Ge0.12 films on silicon, exposed to various anneals.Metastable pseudomorphic Si0.88Ge0.12 films were grown ~265 nm thick on a silicon wafer by molecular-beam epitaxy. Pieces of this wafer were then implanted at room temperature with 100 keV phosphorus ions to a dose of 1.5×1015 cm-2.


2017 ◽  
Vol 10 (3) ◽  
pp. 122
Author(s):  
Flur Ismagilov ◽  
Nikita Uzhegov ◽  
Vyacheslav Vavilov ◽  
Denis Gusakov

2018 ◽  
Vol 4 (4) ◽  
pp. 4-13
Author(s):  
Vladimir A. SIDOROV ◽  
◽  
Gennady D. DOMASHENKO ◽  
Marat R. AKHMETGAREYEV ◽  
Yurii V. SHCHERBAKOV ◽  
...  

Polymers ◽  
2021 ◽  
Vol 13 (13) ◽  
pp. 2098
Author(s):  
Tomas Kalous ◽  
Pavel Holec ◽  
Jakub Erben ◽  
Martin Bilek ◽  
Ondrej Batka ◽  
...  

The electrospinning process that produces fine nanofibrous materials have a major disadvantage in the area of productivity. However, alternating current (AC) electrospinning might help to solve the problem via the modification of high voltage signal. The aforementioned productivity aspect can be observed via a camera system that focuses on the jet creation area and that measures the average lifespan. The paper describes the optimization of polyamide 6 (PA 6) solutions and demonstrates the change in the behavior of the process following the addition of a minor dose of oxoacid. This addition served to convert the previously unspinnable (using AC) solution to a high-quality electrospinning solution. The visual analysis of the AC electrospinning of polymeric solutions using a high-speed camera and a programmable power source was chosen as the method for the evaluation of the quality of the process. The solutions were exposed to high voltage applying two types of AC signal, i.e., the sine wave and the step change. All the recordings presented in the paper contained two sets of data: firstly, camera recordings that showed the visual expression of electrospinning and, secondly, signal recordings that provided information on the data position in the signal function.


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