Low threshold current 1.3 µm Fabry-Perot III-V quantum dot lasers on (001) Si with superior reliability

2018 ◽  
Author(s):  
Daehwan Jung ◽  
Justin Norman ◽  
MJ Kennedy ◽  
Robert Herrick ◽  
Chen Shang ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Threshold Current ◽  
Quantum Dot Lasers ◽  
Fabry Perot ◽  
Low Threshold

Growth, Fabrication, and Operating Characteristics of Ultra-Low Threshold Current Density 1.3 µm Quantum Dot Lasers

2005 ◽  
Vol 44 (4B) ◽  
pp. 2520-2522 ◽  
Author(s):  
Sumon K. Ray ◽  
Kristian M. Groom ◽  
Richard A. Hogg ◽  
Hui-Yun Liu ◽  
Ian R. Sellers ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Current Density ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Quantum Dot Lasers ◽  
Operating Characteristics ◽  
Low Threshold

Effects of Spacer Thickness on the Performance of InGaAs/GaAs Quantum Dot Lasers

2000 ◽  
Vol 642 ◽  
Author(s):  
Nien-Tze Yeh ◽  
Wei-Shen Liu ◽  
Shu-Han Chen ◽  
Jen-Inn Chyi
Keyword(s):  
Quantum Dot ◽  
Quantum Efficiency ◽  
Internal Quantum Efficiency ◽  
Characteristic Temperature ◽  
Threshold Current ◽  
Inhomogeneous Broadening ◽  
Quantum Dot Lasers ◽  
Low Threshold ◽  
Spacer Thickness ◽  
Gaas Quantum Dot

ABSTRACTIt is found that the performance of self-assembled In0.5Ga0.5As/GaAs multi-stack quantum dot lasers is sensitive to the GaAs spacer thickness between the dots. Reducing the spacer thickness from 30 nm to 10 nm leads to narrow photoluminescence linewidth, low threshold current, high characteristic temperature and high internal quantum efficiency. This behavior is attributed to inhomogeneous broadening caused by dot size fluctuation related to spacer thickness.

Selective Oxidation to Form Dielectric Apertures for Low Threshold VCSELs and Microcavity Spontaneous Light Emitters

1999 ◽  
Vol 573 ◽  
Author(s):  
D. G. Deppe ◽  
D. L. Huffaker ◽  
L. A. Graham ◽  
Z. Zou ◽  
S. Csutak
Keyword(s):  
Quantum Dot ◽  
Quantum Well ◽  
Selective Oxidation ◽  
Threshold Current ◽  
Cavity Surface ◽  
Light Emitters ◽  
High Q ◽  
Fabry Perot ◽  
Low Threshold ◽  
Emitting Lasers

ABSTRACTSelective oxidation of AlAs (or AlGaAs) can be used to form buried, low refractive index apertures within high Q Fabry-Perot microcavities. These apertures provide electrical and optical confinement, and for vertical-cavity surface-emitting lasers (VCSELs) have resulted in ultra-low threshold room temperature lasing with threshold currents under 25 μA. When used with quantum dot light emitters, the oxide-apertured microcavity can also be used to control the spontaneous lifetime. We describe the microcavity fabrication based on high Q Fabry-Perot microcavities and selective oxidation, and design and cavity Q constraints for apertured microcavities for quantum well and quantum dot VCSELs and microcavity LEDs. Threshold current densities of quantum well VCSELs are as low as 98 A/cm2, while ground state lasing is also obtained for quantum dot VCSELs. Our initial experiments on microcavities with very small apertures and quantum dot emitters demonstrate up to a factor of 2.3 increase in the spontaneous emission rate.

InAs Quantum Dot Lasers with Extremely Low Threshold Current Density (7 A/cm2/Layer)

2005 ◽  
Vol 44 (No. 35) ◽  
pp. L1103-L1104 ◽  
Author(s):  
Hitoshi Shimizu ◽  
Shanmugam Saravanan ◽  
Junji Yoshida ◽  
Sayoko Ibe ◽  
Noriyuki Yokouchi
Keyword(s):  
Quantum Dot ◽  
Current Density ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Quantum Dot Lasers ◽  
Low Threshold ◽  
Inas Quantum Dot

scholarly journals 1.32 μm InAs/InGaAs/GaAs quantum dot lasers operating at room temperature with low threshold current density

2006 ◽  
Author(s):  
Abdelmajid Salhi ◽  
Vittorianna Tasco ◽  
Luigi Martiradonna ◽  
Giuseppe Visimberga ◽  
Laura Fortunato ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Current Density ◽  
Room Temperature ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Quantum Dot Lasers ◽  
Low Threshold ◽  
Gaas Quantum Dot
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