Room Temperature Dry Etching of INP-Based Semiconductors for Optoelectronic Device Fabrication Using Inductively Coupled Plasma

2007 ◽  
Author(s):  
Changzheng Sun ◽  
Jian Wang ◽  
Qiwei Zhou ◽  
Bing Xiong ◽  
Yi Luo
Keyword(s):  
Inductively Coupled Plasma ◽  
Room Temperature ◽  
Optoelectronic Device ◽  
Dry Etching ◽  
Device Fabrication ◽  
Inductively Coupled

Low Bias Voltage Dry Etching of InP by Inductively Coupled Plasma Using SiCl4/Ar

1998 ◽  
Vol 37 (Part 1, No. 12A) ◽  
pp. 6655-6656 ◽  
Author(s):  
Akihiro Matsutani ◽  
Fumio Koyama ◽  
Kenichi Iga
Keyword(s):  
Bias Voltage ◽  
Inductively Coupled Plasma ◽  
Dry Etching ◽  
Inductively Coupled

Angled stripe InGaAsP/InP SLED fabricated by low-damage inductively coupled plasma dry etching

2004 ◽  
Author(s):  
Jun Zhang ◽  
Xiaodong Huang ◽  
Jin Chang ◽  
Yingjun Liu ◽  
Yi Gan ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Dry Etching ◽  
Inductively Coupled

Dry Etching of TaN/HfO2Gate Stack Structure by Cl2/SF6/Ar Inductively Coupled Plasma

2005 ◽  
Vol 44 (7B) ◽  
pp. 5811-5818 ◽  
Author(s):  
Myoung Hun Shin ◽  
Sung-Woong Na ◽  
Nae-Eung Lee ◽  
Tae Kwan Oh ◽  
Jiyoung Kim ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Dry Etching ◽  
Inductively Coupled

scholarly journals Crystal Chemistry and Luminescence Properties of Eu-Doped Polycrystalline Hydroxyapatite Synthesized by Chemical Precipitation at Room Temperature

Crystals ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 250 ◽  
Author(s):  
Francesco Baldassarre ◽  
Angela Altomare ◽  
Nicola Corriero ◽  
Ernesto Mesto ◽  
Maria Lacalamita ◽  
...  
Keyword(s):  
Fourier Transform ◽  
High Temperature ◽  
Inductively Coupled Plasma ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Chemical Precipitation ◽  
Precipitation Method ◽  
X Ray Diffraction ◽  
X Ray ◽  
Inductively Coupled

Europium-doped hydroxyapatite Ca10(PO4)6(OH)2 (3% mol) powders were synthesized by an optimized chemical precipitation method at 25 °C, followed by drying at 120 °C and calcination at 450 °C and 900 °C. The obtained nanosized crystallite samples were investigated by means of a combination of inductively coupled plasma (ICP) spectroscopy, powder X-ray diffraction (PXRD), Fourier Transform Infrared (FTIR), Raman and photoluminescence (PL) spectroscopies. The Rietveld refinement in the hexagonal P63/m space group showed europium ordered at the Ca2 site at high temperature (900 °C), and at the Ca1 site for lower temperatures (120 °C and 450 °C). FTIR and Raman spectra showed slight band shifts and minor modifications of the (PO4) bands with increasing annealing temperature. PL spectra and decay curves revealed significant luminescence emission for the phase obtained at 900 °C and highlighted the migration of Eu from the Ca1 to Ca2 site as a result of increasing calcinating temperature.

Semiconductor Optoelectronic Device Fabrication Using Dry Etching

1988 ◽  
Vol 144 ◽  
Author(s):  
Adam J. Carter ◽  
Ben Thomas ◽  
David V. Morgan ◽  
Jyoti K. Bhardwaj
Keyword(s):  
Surface Roughness ◽  
Plasma Etching ◽  
Surface Characteristics ◽  
Optoelectronic Device ◽  
Dry Etching ◽  
Device Fabrication ◽  
Material Composition ◽  
Process Gas ◽  
Etched Surface

ABSTRACTPlasma etching of GaAs and InP using a CH4/H2 process gas and AlxGa1−xAs using a SiCl4 plasma are reported. Particular attention to etching characteristics as a function of gas and material composition, r.f. power, pressure and temperature are shown. Etching of GaAs and InP highlight two separate etching mechanisms. Surface roughness data at the etched surface is presented and Cl and CH4/H2 process chemistries are compared which shows the latter to yield significant improvements in etch surface characteristics.

scholarly journals III-nitride dry etching: Comparison of inductively coupled plasma chemistries

1999 ◽  
Vol 17 (4) ◽  
pp. 2202-2208 ◽  
Author(s):  
H. Cho ◽  
Y.-B. Hahn ◽  
D. C. Hays ◽  
C. R. Abernathy ◽  
S. M. Donovan ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Dry Etching ◽  
Inductively Coupled
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