A self heating test structure using poly resistors and P/sup +//N diodes to characterize anomalous charge transfers in embedded flash memories

Author(s):  
P. Mora ◽  
P. Waltz ◽  
S. Renard ◽  
P. Candelier
2013 ◽  
Author(s):  
Rafael V. Carvalho ◽  
Ludmila C. A. Silva ◽  
Milton Amaro ◽  
Alessandro A. Ferreira ◽  
Aparecido M. da Rosa

2019 ◽  
Vol 58 (4) ◽  
pp. 438-444 ◽  
Author(s):  
Sungjae Moon ◽  
Frank Rosenblum ◽  
Yue Hua Tan ◽  
Jan E. Nesset ◽  
Kristian E. Waters ◽  
...  

Author(s):  
O. Ginez ◽  
J.-M. Daga ◽  
M. Combe ◽  
P. Girard ◽  
C. Landrault ◽  
...  

2020 ◽  
Vol 54 (25) ◽  
pp. 3821-3831
Author(s):  
Maksymilian Frąc ◽  
Waldemar Pichór ◽  
Paulina Szołdra

The following paper presents the results of research on cement composites with expanded graphite as resistance heating elements. Samples of cement mortar were prepared with expanded graphite obtained from intercalated graphite by means of rapid heating at 1000℃. Monotonic and cyclic self-heating tests of cement composites with differing contents of expanded graphite were conducted. In the monotonic self-heating test, the electrical current and the surface temperature of the cement composites with expanded graphite were measured at temperatures 23℃ and –10℃ in order to evaluate their capacity to generate heat. The maximum temperature of composites, the time required to raise the temperature by 10℃, and the power density were determined. Five cycles were applied in the cyclic self-heating test to investigate heat-dependent mechanical properties. The results of the research revealed that cement composites with expanded graphite exhibited promising properties for application as resistance heating elements.


2010 ◽  
Vol 1252 ◽  
Author(s):  
Alexandre Guiraud ◽  
Nicolas Breil ◽  
Mickaël Gros-Jean ◽  
Damien Deleruyelle ◽  
Gilles Micolau ◽  
...  

AbstractWe have investigated the integration of Hf-based material as Inter Poly Dielectric in flash memories devices. Electrical measurements showed the good properties of SiO2/HfO2/SiO2 stacks. We then interested to the impact of the thermal budget on this specific stack which induces changes in the electrical properties. XPS measurements suggests those changes are due to the presence of an Hf-silicate layer at the SiO2/HfO2 interface.


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