An Overview of Failure Mechanisms in Embedded Flash Memories

2006 ◽  
Author(s):  
O. Ginez ◽  
J.-M. Daga ◽  
M. Combe ◽  
P. Girard ◽  
C. Landrault ◽  
...  
Keyword(s):  
Failure Mechanisms ◽  
Flash Memories ◽  
Embedded Flash

A Machine Learning-based Approach to Optimize Repair and Increase Yield of Embedded Flash Memories in Automotive Systems-on-Chip

2019 ◽  
Author(s):  
A. Manzini ◽  
P. Inglese ◽  
L. Caldi ◽  
R. Cantero ◽  
G. Carnevale ◽  
...  
Keyword(s):  
Machine Learning ◽  
Flash Memories ◽  
Automotive Systems ◽  
Systems On Chip ◽  
On Chip ◽  
Embedded Flash

Modeling of Charge Failure Mechanisms during the Short Term Retention Depending on Program/Erase Cycle Counts in 3-D NAND Flash Memories

2020 ◽  
Author(s):  
Changbeom Woo ◽  
Shinkeun Kim ◽  
Jaeyeol Park ◽  
Hyungcheol Shin ◽  
Haesoo Kim ◽  
...  
Keyword(s):  
Failure Mechanisms ◽  
Nand Flash ◽  
Short Term ◽  
Flash Memories ◽  
Term Retention

Architecture for Highly Reliable Embedded Flash Memories

2007 ◽  
Author(s):  
Benoit Godard ◽  
Jean-Michel Daga ◽  
Lionel Torres ◽  
Gilles Sassatelli
Keyword(s):  
Flash Memories ◽  
Embedded Flash

Analysis of Failure Mechanisms During the Long-Term Retention Operation in 3-D NAND Flash Memories

2020 ◽  
Vol 67 (12) ◽  
pp. 5472-5478
Author(s):  
Shinkeun Kim ◽  
Kyunghwan Lee ◽  
Changbeom Woo ◽  
Yuchul Hwang ◽  
Hyungcheol Shin
Keyword(s):  
Failure Mechanisms ◽  
Nand Flash ◽  
Flash Memories ◽  
Term Retention ◽  
Long Term Retention

A P1500-compatible programmable BIST approach for the test of embedded flash memories

2003 ◽  
Author(s):  
P. Bernardi ◽  
M. Rebaudengo ◽  
M.S. Reorda ◽  
M. Violante
Keyword(s):  
Flash Memories ◽  
Embedded Flash

Interface Study of SiO2/ HfO2/SiO2 Stacks Used as InterPoly Dielectric for Future Generations of Embedded Flash Memories

2010 ◽  
Vol 1252 ◽  
Author(s):  
Alexandre Guiraud ◽  
Nicolas Breil ◽  
Mickaël Gros-Jean ◽  
Damien Deleruyelle ◽  
Gilles Micolau ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Future Generations ◽  
Silicate Layer ◽  
Electrical Measurements ◽  
Flash Memories ◽  
Thermal Budget ◽  
The Impact ◽  
Interface Study ◽  
Embedded Flash

AbstractWe have investigated the integration of Hf-based material as Inter Poly Dielectric in flash memories devices. Electrical measurements showed the good properties of SiO2/HfO2/SiO2 stacks. We then interested to the impact of the thermal budget on this specific stack which induces changes in the electrical properties. XPS measurements suggests those changes are due to the presence of an Hf-silicate layer at the SiO2/HfO2 interface.

Influence and Comparison of Cu and Alu Metallization Schemes on Endurance of Embedded Flash Memories

2008 ◽  
Author(s):  
G. Tempel ◽  
F. Erler ◽  
J. Fruehauf ◽  
J. Pantfoerder ◽  
K. Schaedler ◽  
...  
Keyword(s):  
Flash Memories ◽  
Embedded Flash
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