Threshold voltage variation extracted from MOSFET C-V curves by charge-based capacitance measurement

2012 ◽  
Author(s):  
Katsuhiro Tsuji ◽  
Kazuo Terada ◽  
Ryo Takeda ◽  
Takaaki Tsunomura ◽  
Akio Nishida ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Capacitance Measurement ◽  
Voltage Variation

Study on Threshold Voltage Variation Evaluated by Charge-Based Capacitance Measurement

2016 ◽  
Vol E99.C (4) ◽  
pp. 466-473
Author(s):  
Katsuhiro TSUJI ◽  
Kazuo TERADA ◽  
Ryo TAKEDA ◽  
Hisato FUJISAKA
Keyword(s):  
Threshold Voltage ◽  
Capacitance Measurement ◽  
Voltage Variation

scholarly journals Ground Plane Impact on Performance of Relaxed Ge FinFETs

2019 ◽  
Vol 14 (1) ◽  
pp. 1-6
Author(s):  
Alberto Vinícius Oliveira ◽  
Guilherme Vieira Gonçalves ◽  
Paula Ghedini Der Agopian ◽  
João Antonio Martino ◽  
Jérôme Mitard ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Computer Aided Design ◽  
Doping Concentration ◽  
Ground Plane ◽  
Subthreshold Swing ◽  
Voltage Variation ◽  
Electrostatic Coupling ◽  
P Type ◽  
Aided Design ◽  
Channel Region

The implementation of a barrier potential layer underneath the channel region, well known as Ground Plane (GP) implantation, and its influence on the performance of relaxed germanium pFinFET devices is investigated in this manuscript. This study aims to explain the fin width dependence of the threshold voltage from experimental data and evaluates the ground plane doping concentration and its depth influence on relaxed p-type channel germanium FinFET parameters, as threshold voltage, transconductance and subthreshold swing, through Technology Computer-Aided Design (TCAD) numerical simulations. The threshold voltage variation reaches up to 80 mV from the narrowest device to the widest one, considering the studied range of ground plane doping concentration. Concerning the subthreshold swing parameter, neither the GP doping concentration, nor its depth play a significant role since the electrostatic coupling is predominant.

Pulse Dependent Threshold Voltage Variation of the Ovonic Threshold Switch in Cross-Point Memory

2020 ◽  
Vol 41 (3) ◽  
pp. 373-376
Author(s):  
Sanghyun Ban ◽  
Hyejung Choi ◽  
Wootae Lee ◽  
Seokman Hong ◽  
Hwanjun Zang ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Cross Point ◽  
Voltage Variation ◽  
Threshold Switch

A study of the threshold voltage variation for ultra-small bulk and SOI CMOS

2001 ◽  
Vol 48 (9) ◽  
pp. 1995-2001 ◽  
Author(s):  
K. Takeuchi ◽  
R. Koh ◽  
T. Mogami
Keyword(s):  
Threshold Voltage ◽  
Voltage Variation ◽  
Soi Cmos

New method for threshold voltage extraction of high-voltage MOSFETs based on gate-to-drain capacitance measurement

2006 ◽  
Vol 27 (7) ◽  
pp. 602-604 ◽  
Author(s):  
C. Anghel ◽  
B. Bakeroot ◽  
Y.S. Chauhan ◽  
R. Gillon ◽  
C. Maier ◽  
...  
Keyword(s):  
High Voltage ◽  
Threshold Voltage ◽  
New Method ◽  
Capacitance Measurement

Design Considerations for PD/SOI SRAM: Impact of Gate Leakage and Threshold Voltage Variation

2008 ◽  
Vol 21 (1) ◽  
pp. 33-40 ◽  
Author(s):  
Rouwaida Kanj ◽  
Rajiv V. Joshi ◽  
Jayakumaran Sivagnaname ◽  
Jente B. Kuang ◽  
Dhruva Acharyya ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Gate Leakage ◽  
Design Considerations ◽  
Voltage Variation
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