Electrical characterization of epoxy insulators by the study of the surface potential decay and return: a new interpretation by polarization processes

Author(s):  
P. Molinie ◽  
M. Goldman
Energies ◽  
2020 ◽  
Vol 13 (6) ◽  
pp. 1434 ◽  
Author(s):  
Sarath Kumara ◽  
Xiangdong Xu ◽  
Thomas Hammarström ◽  
Yingwei Ouyang ◽  
Amir Masoud Pourrahimi ◽  
...  

To design reliable high voltage cables, clean materials with superior insulating properties capable of operating at high electric field levels at elevated temperatures are required. This study aims at the electrical characterization of a byproduct-free crosslinked copolymer blend, which is seen as a promising alternative to conventional peroxide crosslinked polyethylene currently used for high voltage direct current cable insulation. The characterization entails direct current (DC) conductivity, dielectric response and surface potential decay measurements at different temperatures and electric field levels. In order to quantify the insulating performance of the new material, the electrical properties of the copolymer blend are compared with those of two reference materials; i.e., low-density polyethylene (LDPE) and peroxide crosslinked polyethylene (XLPE). It is found that, for electric fields of 10–50 kV/mm and temperatures varying from 30 °C to 70 °C, the DC conductivity of the copolymer blend is in the range of 10−17–10−13 S/m, which is close to the conductivity of crosslinked polyethylene. Furthermore, the loss tangent of the copolymer blend is about three to four times lower than that of crosslinked polyethylene and its magnitude is on the level of 0.01 at 50 °C and 0.12 at 70 °C (measured at 0.1 mHz and 6.66 kV/mm). The apparent conductivity and trap density distributions deduced from surface potential decay measurements also confirmed that the new material has electrical properties at least as good as currently used insulation materials based on XLPE (not byproduct-free). Thus, the proposed byproduct-free crosslinked copolymer blend has a high potential as a prospective insulation medium for extruded high voltage DC cables.


2011 ◽  
Vol 18 (5) ◽  
pp. 1393-1400 ◽  
Author(s):  
M. C. Plopeanu ◽  
P. V. Notingher ◽  
L. M. Dumitran ◽  
B. Tabti ◽  
A. Antoniu ◽  
...  

2018 ◽  
Vol 7 (3.12) ◽  
pp. 232
Author(s):  
Chandra Shakher Tyagi ◽  
R L. Sharma ◽  
Prashant Mani

In this paper the study of electrical characterization of Surface potential & Vth threshold-voltage model is developed for FD SOI MOSFET. The threshold voltage is important parameter in device design. Scaling of device has positive impact on device performance. The various parameters like thickness of silicon film, oxide layer, drain to source voltage plays a key role in improvement of device performance. Surface potential explain the distribution of applied potential throughout the channel. We also analyzed the effect of threshold voltage with various electrical parameters.   


2016 ◽  
Vol 136 (2) ◽  
pp. 86-92 ◽  
Author(s):  
Daomin Min ◽  
Shengtao Li ◽  
Guochang Li ◽  
George Chen

1981 ◽  
Vol 4 ◽  
Author(s):  
T. J. Stultz ◽  
J. F. Gibbons

ABSTRACTStructural and electrical characterization of laser recrystallized LPCVD silicon films on amorphous substrates using a shaped cw laser beam have been performed. In comparing the results to data obtained using a circular beam, it was found that a significant increase in grain size can be achieved and that the surface morphology of the shaped beam recrystallized material was much smoother. It was also found that whereas circular beam recrystallized material has a random grain structure, shaped beam material is highly oriented with a <100> texture. Finally the electrical characteristics of the recrystallized film were very good when measured in directions parallel to the grain boundaries.


2011 ◽  
Vol E94-C (2) ◽  
pp. 157-163 ◽  
Author(s):  
Masakazu MUROYAMA ◽  
Ayako TAJIRI ◽  
Kyoko ICHIDA ◽  
Seiji YOKOKURA ◽  
Kuniaki TANAKA ◽  
...  

Author(s):  
E. Hendarto ◽  
S.L. Toh ◽  
J. Sudijono ◽  
P.K. Tan ◽  
H. Tan ◽  
...  

Abstract The scanning electron microscope (SEM) based nanoprobing technique has established itself as an indispensable failure analysis (FA) technique as technology nodes continue to shrink according to Moore's Law. Although it has its share of disadvantages, SEM-based nanoprobing is often preferred because of its advantages over other FA techniques such as focused ion beam in fault isolation. This paper presents the effectiveness of the nanoprobing technique in isolating nanoscale defects in three different cases in sub-100 nm devices: soft-fail defect caused by asymmetrical nickel silicide (NiSi) formation, hard-fail defect caused by abnormal NiSi formation leading to contact-poly short, and isolation of resistive contact in a large electrical test structure. Results suggest that the SEM based nanoprobing technique is particularly useful in identifying causes of soft-fails and plays a very important role in investigating the cause of hard-fails and improving device yield.


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