Study of high-gate-voltage stress using the reverse gated-diode current measurement in LDD n-type and p-type MOSFET's

Author(s):  
Haifeng Chen ◽  
Xiaohua Ma ◽  
Huimin Du ◽  
Lixin Guo ◽  
Shiguang Shang ◽  
...  
2014 ◽  
Vol 35 (9) ◽  
pp. 094003 ◽  
Author(s):  
Jie Yang ◽  
Kunpeng Jia ◽  
Yajuan Su ◽  
Yang Chen ◽  
Chao Zhao

2013 ◽  
Vol 05 (07) ◽  
pp. 455-458 ◽  
Author(s):  
Han-Chang Liu ◽  
Chung-Teng Huang ◽  
Wen-Kuei Lee ◽  
Mei-Hsiu Lin

2020 ◽  
Vol 50 (2) ◽  
Author(s):  
Krzesimir Nowakowski-Szkudlarek ◽  
Grzegorz Muziol ◽  
Mikolaj Żak ◽  
Mateusz Hajdel ◽  
Marcin Siekacz ◽  
...  

We investigated the influence of the In0.17Ga0.83N:Mg contact layer grown by plasma assisted molecular beam epitaxy on the resistivity of p-type Ni/Au contacts. We demonstrate that the Schottky barrier width for p-type contact is less than 5 nm. We compare circular transmission line measurements with a p-n diode current-voltage characteristics and show that discrepancies between these two methods can occur if surface quality is deteriorated. It is found that the most efficient contacts to p-type material consist of In0.17Ga0.83N:Mg contact layer with Mg doping level as high as 2 × 1020 cm–3.


2007 ◽  
Vol 16 (3) ◽  
pp. 821-825
Author(s):  
Chen Hai-Feng ◽  
Hao Yue ◽  
Ma Xiao-Hua ◽  
Li Kang ◽  
Ni Jin-Yu

2013 ◽  
Vol 82 ◽  
pp. 34-37 ◽  
Author(s):  
Youn Ho Park ◽  
Sang-Hoon Shin ◽  
Jin Dong Song ◽  
Joonyeon Chang ◽  
Suk Hee Han ◽  
...  

2005 ◽  
Vol 871 ◽  
Author(s):  
Marcus Ahles ◽  
Roland Schmechel ◽  
Heinz von Seggern

AbstractAn organic complementary-metal-oxide-semiconductor (CMOS) inverter based on pentacene acting as both n- and p-type organic semiconductor is presented. The circuit consists of two spatially separated transistors which are realized within one continuous pentacene layer. Both transistors act exclusively in unipolar mode with electron and hole mobilities of 0.11 cm2V-1s-1 and 0.10 cm2V-1s-1, respectively. In the domain of the n-channel, electron accumulation in the pentacene is enabled by deposition of traces of calcium acting as electron donator. The CMOS inverter works reliably within the range of the supply voltage (60 V) with a gain in between 17 and 24 which is among the highest values observed in organic systems. Nevertheless, the circuit shows hysteresis, which is explained by a gate voltage depending trap occupation in the n-channel.


2015 ◽  
Author(s):  
Y. Tong ◽  
Z. Lin ◽  
J.T.L. Thong ◽  
D.S.H. Chan ◽  
C. Zhu

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