Enhancement of hot-carrier induced degradation under low gate voltage stress due to hydrogen for NMOSFETs with SiN films

2002 ◽  
Author(s):  
S. Tokitoh ◽  
H. Uchida ◽  
K. Shibusawa ◽  
N. Murakami ◽  
T. Nakamura ◽  
...  
Keyword(s):  
Gate Voltage ◽  
Hot Carrier ◽  
Voltage Stress

Hot-carrier degradation for 90 nm gate length LDD-NMOSFET with ultra-thin gate oxide under low gate voltage stress

2007 ◽  
Vol 16 (3) ◽  
pp. 821-825
Author(s):  
Chen Hai-Feng ◽  
Hao Yue ◽  
Ma Xiao-Hua ◽  
Li Kang ◽  
Ni Jin-Yu
Keyword(s):  
Gate Voltage ◽  
Gate Oxide ◽  
Gate Length ◽  
Hot Carrier ◽  
Voltage Stress ◽  
Thin Gate Oxide ◽  
Hot Carrier Degradation

Hysteresis analysis of graphene transistor under repeated test and gate voltage stress

2014 ◽  
Vol 35 (9) ◽  
pp. 094003 ◽  
Author(s):  
Jie Yang ◽  
Kunpeng Jia ◽  
Yajuan Su ◽  
Yang Chen ◽  
Chao Zhao
Keyword(s):  
Gate Voltage ◽  
Voltage Stress ◽  
Repeated Test

Matching degradation of threshold voltage and gate voltage of NMOSFET after Hot Carrier Injection stress

2011 ◽  
Vol 51 (9-11) ◽  
pp. 1561-1563 ◽  
Author(s):  
Y. Joly ◽  
L. Lopez ◽  
J.-M. Portal ◽  
H. Aziza ◽  
J.-L. Ogier ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Gate Voltage ◽  
Carrier Injection ◽  
Hot Carrier ◽  
Hot Carrier Injection

scholarly journals The TDDB Characteristics of Ultra-Thin Gate Oxide MOS Capacitors under Constant Voltage Stress and Substrate Hot-Carrier Injection

2018 ◽  
Vol 2018 ◽  
pp. 1-6
Author(s):  
Jingyu Shen ◽  
Can Tan ◽  
Rui Jiang ◽  
Wei Li ◽  
Xue Fan ◽  
...  
Keyword(s):  
Degradation Mechanism ◽  
Gate Oxide ◽  
Cmos Technology ◽  
Carrier Injection ◽  
Constant Voltage ◽  
Mos Capacitors ◽  
Hot Carrier ◽  
Hot Carrier Injection ◽  
Voltage Stress ◽  
Thin Gate Oxide

The breakdown characteristics of ultra-thin gate oxide MOS capacitors fabricated in 65 nm CMOS technology under constant voltage stress and substrate hot-carrier injection are investigated. Compared to normal thick gate oxide, the degradation mechanism of time-dependent dielectric breakdown (TDDB) of ultra-thin gate oxide is found to be different. It is found that the gate current (Ig) of ultra-thin gate oxide MOS capacitor is more likely to be induced not only by Fowler-Nordheim (F-N) tunneling electrons, but also by electrons surmounting barrier and penetrating electrons in the condition of constant voltage stress. Moreover it is shown that the time to breakdown (tbd) under substrate hot-carrier injection is far less than that under constant voltage stress when the failure criterion is defined as a hard breakdown according to the experimental results. The TDDB mechanism of ultra-thin gate oxide will be detailed. The differences in TDDB characteristics of MOS capacitors induced by constant voltage stress and substrate hot-carrier injection will be also discussed.

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