Memory Effect in an Aluminum Single-Electron Floating-Node Memory Cell

2000 ◽  
Vol 39 (Part 1, No. 8) ◽  
pp. 4826-4829 ◽  
Author(s):  
Jinhee Kim ◽  
Sangchul Oh ◽  
Kyung-Hwa Yoo ◽  
Jong Wan Park ◽  
Jeong-O Lee ◽  
...  
Keyword(s):  
Memory Effect ◽  
Memory Cell ◽  
Single Electron

Si Nanocrystal Memory Cell with Room-Temperature Single Electron Effects

2001 ◽  
Vol 40 (Part 1, No. 2A) ◽  
pp. 447-451 ◽  
Author(s):  
Ilgweon Kim ◽  
Sangyeon Han ◽  
Kwangseok Han ◽  
Jongho Lee ◽  
Hyungcheol Shin
Keyword(s):  
Room Temperature ◽  
Memory Cell ◽  
Single Electron ◽  
Si Nanocrystal ◽  
Nanocrystal Memory ◽  
Electron Effects

scholarly journals Single-Electron Memories

VLSI Design ◽  
1998 ◽  
Vol 8 (1-4) ◽  
pp. 219-223 ◽  
Author(s):  
Christoph Wasshuber ◽  
Hans Kosina ◽  
Siegfried Selberherr
Keyword(s):  
Power Consumption ◽  
Room Temperature ◽  
State Of The Art ◽  
Memory Cell ◽  
Single Electron ◽  
Lower Power ◽  
Memory Chip ◽  
Single Electronics ◽  
Background Charge ◽  
Random Background

One of the most promising applications of single-electronics is a single-electron memory chip. Such a chip would have orders of magnitude lower power consumption compared to state-of-the-art dynamic memories, and would allow integration densities beyond the tera bit chip.We studied various single-electron memory designs. Additionally we are proposing a new memory cell which we call the T-memory cell. This cell can be manufactured with state-of-the-art lithography, it operates at room temperature and shows a strong resistance against random background charge.

The study of a single-electron memory cell using coupled multiple tunnel-junction arrays

2001 ◽  
Vol 12 (2) ◽  
pp. 178-180 ◽  
Author(s):  
Mincheol Shin ◽  
Seongjae Lee ◽  
Kyoung Wan Park
Keyword(s):  
Tunnel Junction ◽  
Memory Cell ◽  
Single Electron ◽  
Junction Arrays

Silicon single electron memory cell

1998 ◽  
Vol 73 (15) ◽  
pp. 2134-2136 ◽  
Author(s):  
N. J. Stone ◽  
H. Ahmed
Keyword(s):  
Memory Cell ◽  
Single Electron
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