Potential well engineering by partial oxidation of TiN for high-speed and low-voltage Flash memory with good 125°C data retention and excellent endurance
Keyword(s):
Keyword(s):
High-speed and low-voltage performance in a charge-trapping flash memory using a NiO tunnel junction
2011 ◽
Vol 44
(15)
◽
pp. 155105
◽
Keyword(s):
2011 ◽
Vol 58
(10)
◽
pp. 3321-3328
◽
Keyword(s):
2008 ◽
Vol 29
(5)
◽
pp. 512-514
◽
2011 ◽
Vol 32
(12)
◽
pp. 125003
◽