200mm GaN-on-Si epitaxy and e-mode device technology

The influence of the semiconducting Si substrate on the performance of GaN-on-Si RF technology is reviewed. Firstly, the formation of a parasitic conduction channel at the substrate-epitaxy interface is discussed in terms of its physical mechanism and its influence on RF loss, followed by schemes to minimize this effect. Secondly, it is shown that the presence of the parallel channel serves to backbias the III-nitride epitaxial stack and lead to current collapse even on the highly-resistive Si substrates used for RF device fabrication, analogous to GaN-on-doped Si power devices. Strategies to mitigate this issue are also presented and critically compared. Thirdly, thermal generation of carriers in Si at elevated operating temperatures leading to increased substrate loss is quantified, also followed by a discussion of possible techniques to reduce its influence on RF loss.

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The observation of defects on (100) CdTe surfaces by chemical etching

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100131759 ◽

1992 ◽

Vol 50 (2) ◽

pp. 1424-1425

Author(s):

M.E. Lee

Keyword(s):

Single Crystal ◽

Grain Boundaries ◽

Single Crystals ◽

Chemical Etching ◽

Crystalline Perfection ◽

Crystalline Defects ◽

High Incidence ◽

Crystallographic Defects ◽

Cdznte Substrates ◽

Device Technology

The crystalline perfection of bulk CdTe substrates plays an important role in their use in infrared device technology. The application of chemical etchants to determine crystal polarity or the density and distribution of crystallographic defects in (100) CdTe is not well understood. The lack of data on (100) CdTe surfaces is a result of the apparent difficulty in growing (100) CdTe single crystal substrates which is caused by a high incidence of twinning. Many etchants have been reported to predict polarity on one or both (111) CdTe planes but are considered to be unsuitable as defect etchants. An etchant reported recently has been considered to be a true defect etchant for CdTe, MCT and CdZnTe substrates. This etchant has been reported to reveal crystalline defects such as dislocations, grain boundaries and inclusions in (110) and (111) CdTe. In this study the effect of this new etchant on (100) CdTe surfaces is investigated.The single crystals used in this study were (100) CdTe as-cut slices (1mm thickness) from Bridgman-grown ingots.

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Demonstration of a smart pixel using DOES device technology

IEE Proceedings J Optoelectronics ◽

10.1049/ip-j.1992.0037 ◽

1992 ◽

Vol 139 (3) ◽

pp. 208 ◽

Cited By ~ 1

Author(s):

P.A. Kiely ◽

G.W. Taylor ◽

D.P. Docter ◽

P.R. Claisse ◽

T. Vang ◽

...

Keyword(s):

Smart Pixel ◽

Device Technology

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Analisis Forensik Smartphone Android Menggunakan Metode NIST dan Tool MOBILedit Forensic Express

Jurnal Informatika Universitas Pamulang ◽

10.32493/informatika.v5i1.4578 ◽

2020 ◽

Vol 5 (1) ◽

pp. 89

Author(s):

Nasirudin Nasirudin ◽

Sunardi Sunardi ◽

Imam Riadi

Keyword(s):

Mobile Device ◽

Rapid Development ◽

Rapid Progress ◽

Data Backup ◽

Technological Advances ◽

Smartphone Technology ◽

Case Simulation ◽

Device Technology

Technological advances are growing rapidly, including mobile device technology, one of which is an Android smartphone that is experiencing rapid progress with a variety of features so that it can spoil its users, with the rapid development of smartphone technology, many users benefit, but many are disadvantaged by the growing smartphone. technology, so that many perpetrators or persons who commit crimes and seek profits with smartphone facilities. Case simulation by securing Samsung Galaxy A8 brand android smartphone evidence using the MOBILedit forensic express forensic tool with the National Institute of Standards and Technology (NIST) method which consists of four stages of collection, examination, analysis and reporting. The results of testing the Samsung Galaxy A8 android smartphone are carried out with the NIST method and the MOBILedit Forensic Express tool obtained by data backup, extraction and analysis so that there are findings sought for investigation and evidence of crimes committed by persons using android smartphone facilities.

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Decapsulation Techniques for Cu Wire Bonding Package

ISTFA 2009: Conference Proceedings from the 35th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2009p0217 ◽

2009 ◽

Author(s):

Dongmei Meng ◽

Joe Rupley ◽

Chris McMahon

Keyword(s):

Laser Ablation ◽

Thin Layer ◽

Chemical Etching ◽

Wire Bonding ◽

Methods And Techniques ◽

Wet Chemical ◽

Wet Chemical Etching ◽

Reliability Issue ◽

Etch Time ◽

Device Technology

Abstract This paper presents decapsulation solutions for devices bonded with Cu wire. By removing mold compound to a thin layer using a laser ablation tool, Cu wire bonded packages are decapsulated using wet chemical etching by controlling the etch time and temperature. Further, the paper investigates the possibilities of decapsulating Cu wire bonded devices using full wet chemical etches without the facilitation of laser ablation removing much of mold compound. Additional discussion on reliability concerns when evaluating Cu wirebond devices is addressed here. The lack of understanding of the reliability of Cu wire bonded packages creates a challenge to the FA engineer as they must develop techniques to help understanding the reliability issue associated with Cu wire bonding devices. More research and analysis are ongoing to develop appropriate analysis methods and techniques to support the Cu wire bonding device technology in the lab.

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