Demonstration of a smart pixel using DOES device technology

1992 ◽  
Vol 139 (3) ◽  
pp. 208 ◽  
Author(s):  
P.A. Kiely ◽  
G.W. Taylor ◽  
D.P. Docter ◽  
P.R. Claisse ◽  
T. Vang ◽  
...  
Author(s):  
M.E. Lee

The crystalline perfection of bulk CdTe substrates plays an important role in their use in infrared device technology. The application of chemical etchants to determine crystal polarity or the density and distribution of crystallographic defects in (100) CdTe is not well understood. The lack of data on (100) CdTe surfaces is a result of the apparent difficulty in growing (100) CdTe single crystal substrates which is caused by a high incidence of twinning. Many etchants have been reported to predict polarity on one or both (111) CdTe planes but are considered to be unsuitable as defect etchants. An etchant reported recently has been considered to be a true defect etchant for CdTe, MCT and CdZnTe substrates. This etchant has been reported to reveal crystalline defects such as dislocations, grain boundaries and inclusions in (110) and (111) CdTe. In this study the effect of this new etchant on (100) CdTe surfaces is investigated.The single crystals used in this study were (100) CdTe as-cut slices (1mm thickness) from Bridgman-grown ingots.


2020 ◽  
Vol 5 (1) ◽  
pp. 89
Author(s):  
Nasirudin Nasirudin ◽  
Sunardi Sunardi ◽  
Imam Riadi

Technological advances are growing rapidly, including mobile device technology, one of which is an Android smartphone that is experiencing rapid progress with a variety of features so that it can spoil its users, with the rapid development of smartphone technology, many users benefit, but many are disadvantaged by the growing smartphone. technology, so that many perpetrators or persons who commit crimes and seek profits with smartphone facilities. Case simulation by securing Samsung Galaxy A8 brand android smartphone evidence using the MOBILedit forensic express forensic tool with the National Institute of Standards and Technology (NIST) method which consists of four stages of collection, examination, analysis and reporting. The results of testing the Samsung Galaxy A8 android smartphone are carried out with the NIST method and the MOBILedit Forensic Express tool obtained by data backup, extraction and analysis so that there are findings sought for investigation and evidence of crimes committed by persons using android smartphone facilities.


Author(s):  
Dongmei Meng ◽  
Joe Rupley ◽  
Chris McMahon

Abstract This paper presents decapsulation solutions for devices bonded with Cu wire. By removing mold compound to a thin layer using a laser ablation tool, Cu wire bonded packages are decapsulated using wet chemical etching by controlling the etch time and temperature. Further, the paper investigates the possibilities of decapsulating Cu wire bonded devices using full wet chemical etches without the facilitation of laser ablation removing much of mold compound. Additional discussion on reliability concerns when evaluating Cu wirebond devices is addressed here. The lack of understanding of the reliability of Cu wire bonded packages creates a challenge to the FA engineer as they must develop techniques to help understanding the reliability issue associated with Cu wire bonding devices. More research and analysis are ongoing to develop appropriate analysis methods and techniques to support the Cu wire bonding device technology in the lab.


2014 ◽  
Vol 8 (1) ◽  
pp. 404-411 ◽  
Author(s):  
Guo Rongyan ◽  
Zhang Honghui

As an important electrical safety protection device in low voltage distribution system, residual current protection device is to protect the insulation line leakage fault; the electric shock of the people plays an important role in fault. From the protection characteristics of residual current protective device to points, those can be divided into, residual current protection device for residual pulsating direct current and residual dc, according to the residual sinusoidal alternating current.


Author(s):  
Elizabeth A. Johnson ◽  
Jane M. Carrington

It is estimated 1 in 3 clinical trials utilize a wearable device to gather real-time participant data, including sleep habits, telemetry, and physical activity. While wearable technologies (including smart watches, USBs, and implantable devices) have been revolutionary in their ability to provide a higher precision and accuracy to data acquisition external to the research milieu, there is hesitancy among providers and participants alike given security concerns, perception of cyber-related threats, and meaning attributed to privacy issues. The purpose of this research is to define cyber-situational awareness (CSA) as it pertains to clinical trials, evaluate its current measurement, and describe best practices for research investigators and trial participants to enhance protections in the digital age. This paper reviews integrated elements of CSA within the process of informed consent when wearable devices are implemented for trial procedures. Evaluation of CSA as part of informed consent allows the research site to support the participant in knowledge gaps surrounding the technology while also providing feedback to the trial sponsor as to technology improvements to enhance usability and wearability of the device.


Micromachines ◽  
2021 ◽  
Vol 12 (6) ◽  
pp. 617
Author(s):  
Li-Fang Jia ◽  
Lian Zhang ◽  
Jin-Ping Xiao ◽  
Zhe Cheng ◽  
De-Feng Lin ◽  
...  

AlGaN/GaN E/D-mode GaN inverters are successfully fabricated on a 150-mm Si wafer. P-GaN gate technology is applied to be compatible with the commercial E-mode GaN power device technology platform and a systematic study of E/D-mode GaN inverters has been conducted with detail. The key electrical characters have been analyzed from room temperature (RT) to 200 °C. Small variations of the inverters are observed at different temperatures. The logic swing voltage of 2.91 V and 2.89 V are observed at RT and 200 °C at a supply voltage of 3 V. Correspondingly, low/high input noise margins of 0.78 V/1.67 V and 0.68 V/1.72 V are observed at RT and 200 °C. The inverters also demonstrate small rising edge time of the output signal. The results show great potential for GaN smart power integrated circuit (IC) application.


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