Ion Implantation Technology for Image Sensors

2016 ◽  
Author(s):  
Nobukazu Teranishi
Keyword(s):  
Ion Implantation ◽  
Image Sensors

Silicon Wafer Gettering Design for Advanced CMOS Image Sensors Using Hydrocarbon Molecular Ion Implantation: A review

2021 ◽  
Author(s):  
Kazunari Kurita ◽  
Takeshi Kadono ◽  
Ryosuke Okuyama ◽  
Ayumi Onaka-Masada ◽  
Satoshi Shigematsu ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Silicon Wafer ◽  
Image Sensors ◽  
Molecular Ion ◽  
Cmos Image Sensors

Proximity gettering technology for advanced CMOS image sensors using carbon cluster ion‐implantation technique: A review

2017 ◽  
Vol 214 (7) ◽  
pp. 1700216 ◽  
Author(s):  
Kazunari Kurita ◽  
Takeshi Kadono ◽  
Ryousuke Okuyama ◽  
Satoshi Shigemastu ◽  
Ryo Hirose ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Carbon Cluster ◽  
Image Sensors ◽  
Implantation Technique ◽  
Cmos Image Sensors ◽  
Cluster Ion

scholarly journals A Review of Proximity Gettering Technology for CMOS Image Sensors Using Hydrocarbon Molecular Ion Implantation

2019 ◽  
Vol 31 (6) ◽  
pp. 1939 ◽  
Author(s):  
Kazunari Kurita ◽  
Takeshi Kadono ◽  
Ryousuke Okuyama ◽  
Satoshi Shigematsu ◽  
Ryo Hirose ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Image Sensors ◽  
Molecular Ion ◽  
Cmos Image Sensors

scholarly journals Proximity gettering technology for advanced CMOS image sensors using carbon cluster ion‐implantation technique: A review (Phys. Status Solidi A 7∕2017)

2017 ◽  
Vol 214 (7) ◽  
pp. 1770141
Author(s):  
Kazunari Kurita ◽  
Takeshi Kadono ◽  
Ryousuke Okuyama ◽  
Satoshi Shigemastu ◽  
Ryo Hirose ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Carbon Cluster ◽  
Image Sensors ◽  
Implantation Technique ◽  
Cmos Image Sensors ◽  
Cluster Ion

scholarly journals A Review of Ion Implantation Technology for Image Sensors †

Sensors ◽  
2018 ◽  
Vol 18 (7) ◽  
pp. 2358 ◽  
Author(s):  
Nobukazu Teranishi ◽  
Genshu Fuse ◽  
Michiro Sugitani
Keyword(s):  
Ion Implantation ◽  
Metal Contamination ◽  
Technology Development ◽  
Irradiation Time ◽  
Ion Beam ◽  
Beam Current ◽  
Image Sensors ◽  
Beam Current Density ◽  
Plasma Generation ◽  
Protection Layer

Ion implantation technology is reviewed mainly from the viewpoint of image sensors, which play a significant role in implantation technology development. Image sensors are so sensitive to metal contamination that they can detect even one metal atom per pixel. To reduce the metal contamination, the plasma shower using RF (radio frequency) plasma generation is a representative example. The electrostatic angular energy filter after the mass analyzing magnet is a highly effective method to remove energetic metal contamination. The protection layer on the silicon is needed to protect the silicon wafer against the physisorbed metals. The thickness of the protection layer should be determined by considering the knock-on depth. The damage by ion implantation also causes blemishes. It becomes larger in the following conditions if the other conditions are the same; a. higher energy; b. larger dose; c. smaller beam size (higher beam current density); d. longer ion beam irradiation time; e. larger ion mass. To reduce channeling, the most effective method is to choose proper tilt and twist angles. For P+ pinning layer formation, the low-energy B+ implantation method might have less metal contamination and damage, compared with the BF2+ method.

Gettering Technology for CMOS Image Sensors Using a Cluster Ion Implantation

Hyomen Kagaku ◽  
2016 ◽  
Vol 37 (3) ◽  
pp. 104-109 ◽  
Author(s):  
Kazunari KURITA ◽  
Takeshi KADONO ◽  
Ryousuke OKUYAMA ◽  
Ryo HIROSE ◽  
Ayumi MASADA ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Image Sensors ◽  
Cmos Image Sensors ◽  
Cluster Ion
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