Electrical field analysis of nanoscale field effect transistors

Digest of Papers Microprocesses and Nanotechnology 2003. 2003 International Microprocesses and Nanotechnology Conference ◽

10.1109/imnc.2003.1268735 ◽

2004 ◽

Author(s):

A. Boudjella ◽

Z. Jin ◽

Y. Savaria

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Field Analysis ◽

Electrical Field

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Electrical Field Analysis of Nanoscale Field Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.43.3831 ◽

2004 ◽

Vol 43 (6B) ◽

pp. 3831-3837 ◽

Author(s):

Aissa Boudjella ◽

Zhongfang Jin ◽

Yvon Savaria

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Field Analysis ◽

Electrical Field

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Study of high electrical field induced degradation of channel response in metal‐oxide‐semiconductor field‐effect transistors using an ac conductance technique

Applied Physics Letters ◽

10.1063/1.96318 ◽

1985 ◽

Vol 47 (11) ◽

pp. 1177-1179

Author(s):

P. D. Chow ◽

K. L. Wang

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Field ◽

Channel Response ◽

High Electrical Field ◽

Conductance Technique ◽

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Simulation of the lateral electrical field for the analysis of threshold voltage instabilities of suspended-gate field-effect transistors

Sensors and Actuators B Chemical ◽

10.1016/0925-4005(93)80024-6 ◽

1993 ◽

Vol 12 (3) ◽

pp. 231-235 ◽

Author(s):

Z. Gergintschew ◽

D. Schipanski ◽

P. Kornetzky ◽

I. Eisele ◽

B. Flietner

Keyword(s):

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Electrical Field

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APPLICATIONS OF a-Si FIELD EFFECT TRANSISTORS IN LIQUID CRYSTAL DISPLAYS AND IN INTEGRATED LOGIC CIRCUITS

Le Journal de Physique Colloques ◽

10.1051/jphyscol:1981490 ◽

1981 ◽

Vol 42 (C4) ◽

pp. C4-423-C4-432 ◽

Author(s):

P. G. Le Comber ◽

A. J. Snell ◽

K. D. Mackenzie ◽

W. E. Spear

Keyword(s):

Liquid Crystal ◽

Field Effect ◽

Field Effect Transistors ◽

Liquid Crystal Displays ◽

Logic Circuits ◽

Integrated Logic

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Construction of two-dimensional regression models of current-voltage characteristics of the output current of field-effect transistors using the information system PLExp

Izmeritel`naya Tekhnika ◽

10.32446/0368-1025it.2019-11-49-55 ◽

2019 ◽

pp. 49-55

Author(s):

N.Y. Baturina ◽

I.V. Kalienko

Keyword(s):

Information System ◽

Regression Models ◽

Field Effect ◽

Field Effect Transistors ◽

Two Dimensional ◽

Output Current ◽

Current Voltage ◽

Current Voltage Characteristics

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Ambipolar Characteristics of Solution Processed Bilayer Field Effect Transistors based on Poly(3-hexylthiophene) and fullerene derivatives

10.1557/proc-1115-h05-43 ◽

2008 ◽

Author(s):

Takeomi Morita ◽

Syuichi Nagamatsu ◽

Vipul Singh ◽

Shinya Oku ◽

Wataru Takashima ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Solution Processed ◽

Fullerene Derivatives

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Air-Stable n-Channel Organic Single-Crystal Field-Effect Transistors

10.1557/proc-1115-h05-10 ◽

2008 ◽

Author(s):

Takafumi Uemura ◽

Masakazu Yamagishi ◽

Yukihiro Tominari ◽

Jun Takeya

Keyword(s):

Single Crystal ◽

Crystal Field ◽

Field Effect ◽

Field Effect Transistors ◽

Crystal Field Effect ◽

Organic Single Crystal

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Organic Three-dimensional Field-effect Transistors

10.1557/proc-1115-h03-03 ◽

2008 ◽

Author(s):

M. Uno ◽

I. Doi ◽

K. Takimiya ◽

Jun Takeya

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Three Dimensional

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Growth Mechanism of Pentacene on HfON Gate Insulator and Its Effect on Electrical Properties of Organic Field-Effect Transistors

IEICE Transactions on Electronics ◽

10.1587/transele.e95.c.885 ◽

2012 ◽

Vol E95.C (5) ◽

pp. 885-890 ◽

Author(s):

Min LIAO ◽

Hiroshi ISHIWARA ◽

Shun-ichiro OHMI

Keyword(s):

Electrical Properties ◽

Growth Mechanism ◽

Field Effect ◽

Field Effect Transistors ◽

Gate Insulator ◽

Organic Field Effect Transistors

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A Calculation Model for Submicron Field-Effect Transistors Based on GaAs

Telecommunications and Radio Engineering ◽

10.1615/telecomradeng.v58.i7-8.90 ◽

2002 ◽

Vol 58 (7-8) ◽

pp. 9

Author(s):

S. A. Zuev ◽

V. V. Starostenko ◽

A. A. Shadrin

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Calculation Model

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