Electron mobility in modulation doped AlGaN/GaN and InGaN/GaN quantum wells: A comparative study

2008 ◽  
Vol 147 (3-4) ◽  
pp. 98-102 ◽  
Author(s):  
Zeki Yarar
Keyword(s):  
Comparative Study ◽  
Quantum Wells ◽  
Electron Mobility

Enhanced electron mobility and high order fractional quantum Hall states in AlAs quantum wells

2002 ◽  
Vol 80 (9) ◽  
pp. 1583-1585 ◽  
Author(s):  
E. P. De Poortere ◽  
Y. P. Shkolnikov ◽  
E. Tutuc ◽  
S. J. Papadakis ◽  
M. Shayegan ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Electron Mobility ◽  
Quantum Hall ◽  
High Order ◽  
Fractional Quantum ◽  
Fractional Quantum Hall ◽  
Quantum Hall States ◽  
Hall States

INFLUENCE OF NONLINEAR ELECTRON MOBILITY ON RESPONSE TIME IN PHOTOREFRACTIVE SEMICONDUCTOR QUANTUM WELLS

2012 ◽  
Vol 21 (04) ◽  
pp. 1250050 ◽  
Author(s):  
MAREK WICHTOWSKI ◽  
ANDRZEJ ZIOLKOWSKI ◽  
EWA WEINERT-RACZKA ◽  
BLAZEJ JABLONSKI ◽  
WOJCIECH KARWECKI
Keyword(s):  
Electric Field ◽  
Quantum Wells ◽  
Electron Mobility ◽  
Hot Electrons ◽  
Nonlinear Transport ◽  
Field Range ◽  
Fringe Contrast ◽  
Recording Time ◽  
Semiconductor Quantum Wells ◽  
Charge Field

Nonlinear transport of hot electrons in semi-insulating GaAs / AlGaAs quantum wells significantly affects their photorefractive properties. In case of two waves mixing, this influence consists, among others, in an increased shift of photorefractive grating relative to light intensity distribution. The influence of nonlinear transport on grating recording time is less examined experimentally and theoretically. This study compares numerical and analytical solutions describing grating dynamics in approximation of small fringe contrast. The influence of nonlinear electron mobility on space-charge field was examined depending on external electric field intensity and on the grating constant. It was found that in the electric field range below 20 kV/cm, the nonlinear transport of electrons does not shorten the grating generation time.

Bandstructure Near Misfit Dislocations in Si Quantum Wells

1998 ◽  
Vol 4 (S2) ◽  
pp. 794-795
Author(s):  
P.E. Batson
Keyword(s):  
Quantum Wells ◽  
Conduction Band ◽  
Electron Mobility ◽  
Axial Strain ◽  
Strain Relaxation ◽  
Local Potential ◽  
Misfit Dislocations ◽  
High Electron ◽  
Strained Si ◽  
Growth Interface

High electron mobility structures have been built for several years now using strained silicon layers grown on SixGe(1-x) with x in the 25-40% range. In these structures, a thin layer of silicon is grown between layers of unstrained GeSi alloy. Matching of the two lattices in the plane of growth produces a bi-axial strain in the silicon, splitting the conduction band and providing light electron levels for enhanced mobility. If the silicon channel becomes too thick, strain relaxation can occur by injection of misfit dislocations at the growth interface between the silicon and GeSi alloy. The strain field of these dislocations then gives rise to a local potential variation that limits electron mobility in the strained Si channel. This study seeks to verify this mechanism by measuring the absolute conduction band shifts which track the local potential near the misfit dislocations.

scholarly journals Comparative study of Au and Ni/Au gated AlGaN/GaN high electron mobility transistors

AIP Advances ◽  
2019 ◽  
Vol 9 (12) ◽  
pp. 125231
Author(s):  
Ajay Kumar Visvkarma ◽  
Chandan Sharma ◽  
Robert Laishram ◽  
Sonalee Kapoor ◽  
D. S. Rawal ◽  
...  
Keyword(s):  
Comparative Study ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors
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