Low-field time dependent dielectric breakdown characterization of very large area gate oxide [CMOS]

2002 ◽  
Author(s):  
M. Bahrami ◽  
B. Fishbein ◽  
P. Lindo
Keyword(s):  
Dielectric Breakdown ◽  
Gate Oxide ◽  
Time Dependent ◽  
Large Area ◽  
Time Dependent Dielectric Breakdown ◽  
Low Field

Study of Time Dependent Dielectric Breakdown Distribution in Ultrathin Gate Oxide

2007 ◽  
Vol 46 (No. 28) ◽  
pp. L691-L692 ◽  
Author(s):  
Takashi Miyakawa ◽  
Tsutomu Ichiki ◽  
Junichi Mitsuhashi ◽  
Kazutoshi Miyamoto ◽  
Tetsuo Tada ◽  
...  
Keyword(s):  
Dielectric Breakdown ◽  
Gate Oxide ◽  
Time Dependent ◽  
Time Dependent Dielectric Breakdown

Reliability and Ruggedness of Planar Silicon Carbide MOSFETs

2019 ◽  
Vol 963 ◽  
pp. 782-787
Author(s):  
Kevin Matocha ◽  
In Hwan Ji ◽  
Sauvik Chowdhury
Keyword(s):  
Silicon Carbide ◽  
Threshold Voltage ◽  
Dielectric Breakdown ◽  
Gate Oxide ◽  
Time Dependent ◽  
Gate Bias ◽  
Constant Voltage ◽  
Time Dependent Dielectric Breakdown ◽  
Planar Silicon ◽  
State Of Art

The reliability and ruggedness of Monolith/Littelfuse planar SiC MOSFETs have been evaluated using constant voltage time-dependent dielectric breakdown for gate oxide wearout predictions, showing estimated > 100 year life at VGS=+25V and T=175C. Using extended time high-temperature gate bias, we have shown < 250 mV threshold voltage shifts for > 5000 hours under VGS=+25V and negligible threshold voltage shifts for > 2500 hours under VGS=-10V, both at T=175C. Under unclamped inductive switching, these 1200V, 80 mOhm SiC MOSFETs survive 1000 mJ of avalanche energy, meeting state-of-art ruggedness for 1200V SiC MOSFETs.

Gate Oxide Reliability of SiC MOSFETs and Capacitors Fabricated on 150mm Wafers

2019 ◽  
Vol 963 ◽  
pp. 745-748 ◽  
Author(s):  
Daniel J. Lichtenwalner ◽  
Shadi Sabri ◽  
Edward van Brunt ◽  
Brett Hull ◽  
Satyaki Ganguly ◽  
...  
Keyword(s):  
Activation Energy ◽  
Dielectric Breakdown ◽  
Gate Oxide ◽  
Large Area ◽  
Temperature Dependent ◽  
Acceleration Parameter ◽  
Time Dependent Dielectric Breakdown ◽  
Oxide Reliability ◽  
Voltage Breakdown ◽  
Linear Field

Gate oxide reliability on silicon carbide MOSFETs and large-area SiC N-type capacitors was studied for devices fabricated on 150mm SiC substrates. Oxide lifetime was measured under accelerated stress conditions using constant-voltage time-dependent dielectric breakdown (TDDB) testing, or ramped-voltage breakdown (RBD) testing. TDDB results from 1200V Gen3 MOSFETs reveal a field acceleration parameter of about 35 nm/V, similar to values reported for SiO2 on silicon. Temperature-dependent RBD tests of large capacitors from 25°C to 200°C reveal an apparent activation energy of 0.24eV, indicating that oxide lifetime increases as the temperature is decreased, as expected. Using this acceleration parameter and activation energy in the linear field model, the gate oxide lifetime from MOSFET TDDB testing extrapolates to greater than 108 hours at a gate voltage of 15 VGS at 175°C.

950 Volt 4H-SiC MOSFETs: DC and Transient Performance and Gate Oxide Reliability

2008 ◽  
Vol 600-603 ◽  
pp. 1131-1134 ◽  
Author(s):  
Kevin Matocha ◽  
Zachary Stum ◽  
Steve Arthur ◽  
Greg Dunne ◽  
Ljubisa Stevanovic
Keyword(s):  
Electric Field ◽  
Applied Electric Field ◽  
Dielectric Breakdown ◽  
Gate Oxide ◽  
Time Dependent ◽  
Time To Failure ◽  
Time Dependent Dielectric Breakdown ◽  
Oxide Reliability ◽  
Blocking Voltage ◽  
Mean Time

SiC vertical MOSFETs were fabricated and characterized to achieve a blocking voltage of 950 Volts and a specific on-resistance of 8.4 mW-cm2. Extrapolations of time-dependent dielectric breakdown measurements versus applied electric field indicate that the gate oxide mean-time to failure is approximately 105 hours at 250°C.

Time-Dependent Dielectric Breakdown Characterization of 90- and 65-nm-Node Cu/SiOC Interconnects with Via Plugs

2007 ◽  
Vol 46 (4A) ◽  
pp. 1444-1451 ◽  
Author(s):  
Kazuyoshi Ueno ◽  
Akiko Kameyama ◽  
Akira Matsumoto ◽  
Manabu Iguchi ◽  
Toshiyuki Takewaki ◽  
...  
Keyword(s):  
Dielectric Breakdown ◽  
Time Dependent ◽  
Time Dependent Dielectric Breakdown
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