Effect of contact field plate on hot-carrier-induced on-resistance degradation in n-Drain extended MOS transistors

2017 ◽  
Author(s):  
Lin Wei ◽  
Upinder Singh ◽  
Cheng Chao ◽  
Ruchil Jain ◽  
Purakh Raj Verma
Keyword(s):  
Mos Transistors ◽  
Hot Carrier ◽  
Field Plate ◽  
Resistance Degradation ◽  
Contact Field

ANALYSIS OF HOT CARRIER DEGRADATION IN AC STRESSED N-CHANNEL MOS TRANSISTORS USING THE CHARGE PUMPING TECHNIQUE

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-651-C4-655 ◽  
Author(s):  
R. BELLENS ◽  
P. HEREMANS ◽  
G. GROESENEKEN ◽  
H. E. MAES
Keyword(s):  
Mos Transistors ◽  
Charge Pumping ◽  
Hot Carrier ◽  
Hot Carrier Degradation

Investigation of characteristics and hot-carrier reliability of high-voltage MOS transistors with various doping concentrations in the drift region

2018 ◽  
Vol 33 (12) ◽  
pp. 125019
Author(s):  
Yen-Lin Tsai ◽  
Jone F Chen ◽  
Shang-Feng Shen ◽  
Hao-Tang Hsu ◽  
Chia-Yu Kao ◽  
...  
Keyword(s):  
High Voltage ◽  
Drift Region ◽  
Mos Transistors ◽  
Hot Carrier

Anomalous Hot-Carrier-Induced On-Resistance Degradation in High-Voltage LDMOS Transistors

2007 ◽  
Author(s):  
Shiang-Yu Chen ◽  
Jone F. Chen ◽  
Kuo-Ming Wu ◽  
J. R. Lee ◽  
C. M. Liu ◽  
...  
Keyword(s):  
High Voltage ◽  
Hot Carrier ◽  
Resistance Degradation

Hot-carrier reliability and breakdown characteristics of multi-finger RF MOS transistors

2009 ◽  
Vol 49 (1) ◽  
pp. 13-16 ◽  
Author(s):  
H. Wong ◽  
Y. Fu ◽  
J.J. Liou ◽  
Y. Yue
Keyword(s):  
Mos Transistors ◽  
Hot Carrier
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