Convergence of Hot-Carrier-Induced Saturation Region Drain Current and On-Resistance Degradation in Drain Extended MOS Transistors

2009 ◽  
Vol 56 (11) ◽  
pp. 2843-2847 ◽  
Author(s):  
Jone F. Chen ◽  
Shiang-Yu Chen ◽  
Kuo-Ming Wu ◽  
J. R. Shih ◽  
Kenneth Wu
Keyword(s):  
Drain Current ◽  
Mos Transistors ◽  
Hot Carrier ◽  
Saturation Region ◽  
Resistance Degradation

scholarly journals Modeling of the I–V Characteristics for LDD-nMOSFETs in Relation with Defects Induced by Hot-Carrier Injection

2003 ◽  
Vol 26 (4) ◽  
pp. 197-204
Author(s):  
R. Marrakh ◽  
A. Bouhdada
Keyword(s):  
Electric Field ◽  
Drain Current ◽  
Carrier Injection ◽  
Mos Transistors ◽  
Hot Carriers ◽  
Mos Transistor ◽  
Hot Carrier ◽  
Mos Structure ◽  
Hot Carrier Injection ◽  
Lightly Doped Drain

The hot-carrier injection is observed increasingly to degrade the I–V characteristics with the scaling of MOS transistors. For the lightly doped drain MOS transistor the injection of the hot-carriers, caused by the high electric field in the MOS structure, is localized in the LDD region. The modeling of the drain current in relation to defects due to the hot-carrier injection allows us to investigate the I–V characteristics and the transconductance of devices. Consequently, we can know the amount of the device degradation caused by these defects in order to find technological solutions to optimize reliability.

ANALYSIS OF HOT CARRIER DEGRADATION IN AC STRESSED N-CHANNEL MOS TRANSISTORS USING THE CHARGE PUMPING TECHNIQUE

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-651-C4-655 ◽  
Author(s):  
R. BELLENS ◽  
P. HEREMANS ◽  
G. GROESENEKEN ◽  
H. E. MAES
Keyword(s):  
Mos Transistors ◽  
Charge Pumping ◽  
Hot Carrier ◽  
Hot Carrier Degradation

scholarly journals Hot-carrier-induced degradation of drain current hysteresis and transients in thin gate oxide floating body partially depleted SOI nMOSFETs

2006 ◽  
Vol 46 (9-11) ◽  
pp. 1657-1663 ◽  
Author(s):  
J.M. Rafí ◽  
E. Simoen ◽  
K. Hayama ◽  
A. Mercha ◽  
F. Campabadal ◽  
...  
Keyword(s):  
Drain Current ◽  
Gate Oxide ◽  
Floating Body ◽  
Hot Carrier ◽  
Thin Gate Oxide

Investigation of characteristics and hot-carrier reliability of high-voltage MOS transistors with various doping concentrations in the drift region

2018 ◽  
Vol 33 (12) ◽  
pp. 125019
Author(s):  
Yen-Lin Tsai ◽  
Jone F Chen ◽  
Shang-Feng Shen ◽  
Hao-Tang Hsu ◽  
Chia-Yu Kao ◽  
...  
Keyword(s):  
High Voltage ◽  
Drift Region ◽  
Mos Transistors ◽  
Hot Carrier

ON THE DRAIN CURRENT SATURATION IN CARBON NANOTUBE FIELD EFFECT TRANSISTORS

NANO ◽  
2010 ◽  
Vol 05 (03) ◽  
pp. 161-165 ◽  
Author(s):  
A. BENFDILA ◽  
S. ABBAS ◽  
R. IZQUIERDO ◽  
R. TALMAT ◽  
A. VASEASHTA
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Electronic Devices ◽  
Ballistic Transport ◽  
Drain Current ◽  
Functional Behavior ◽  
Current Saturation ◽  
Current Voltage ◽  
Saturation Region ◽  
Current Voltage Characteristics

Electronic devices based on carbon nanotubes (CNTs) show potential for circuit miniaturization due to their superior electrical characteristics and reduced dimensionality. The CNT field effect transistors (CNFETs) offer breakthrough in miniaturization of various electronic circuits. Investigation of ballistic transport governing the operation of CNFETs is essential for understanding the device's functional behavior. This investigation is focused on a study of current–voltage characteristics of device behavior in hard saturation region. The investigation utilizes a set of current–voltage characteristics obtained on typical devices. This work is an extension of our earlier work describing application of our approach to Si -MOSFET behavior in the saturation region.

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