Effects of sol-gel PZT film thickness and electrode structure on the electrical behavior of Pt/PZT/Pt capacitors

2002 ◽  
Author(s):  
E.A. Kneer ◽  
D.P. Birnie ◽  
G. Teowee ◽  
J.C. Podlesny
Keyword(s):  
Film Thickness ◽  
Sol Gel ◽  
Electrical Behavior ◽  
Electrode Structure ◽  
Pzt Film

Effect of Sol-Gel PZT Film Thickness on the Hysteresis Properties

2012 ◽  
Vol 439 (1) ◽  
pp. 74-79 ◽  
Author(s):  
Yu. V. Podgorny ◽  
D. S. Seregin ◽  
A. S. Sigov ◽  
K. A. Vorotilov
Keyword(s):  
Film Thickness ◽  
Sol Gel ◽  
Pzt Film ◽  
Hysteresis Properties

Orientation Selection in Sol-Gel Derived PZT Thin Films

2000 ◽  
Vol 655 ◽  
Author(s):  
G. J. Norga ◽  
Laura Fé
Keyword(s):  
Film Thickness ◽  
Sol Gel ◽  
Electrode System ◽  
Film Properties ◽  
Orientation Selection ◽  
Pzt Film ◽  
Pzt Films ◽  
Basic Studies ◽  
Excessive Oxygen ◽  
Real Temperature

AbstractMotivated by the growing impact of PZT film orientation on ferroelectric film properties as film thickness is scaled down, we present basic studies on orientation selection in sol-gel derived PZT films, using pre-annealed Pt/Ti electrode layers as a model electrode system. FTIR was used to study, on a real temperature scale, chemical reactions in the films during the initial thermal steps prior to crystallization. We found that the chemical structure of the pyrolyzed film has a much larger impact on orientation selection than has previously been realized. In addition to pyrolysis conditions, the ambient used for the crystallization step was found to play a crucial role in orientation selection. As film thickness decreases, excessive oxygen incorporation in the films is seen to result in the loss of the preferential (111) texture when crystallization is performed in air. By performing crystallizations in N2, 40 nm thick PZT films with a strongly preferential (111) orientation could be obtained.

Processing and characterization of Pb(Zr, Ti)O3 films, up to 10 μm thick, produced from a diol sol-gel route

1996 ◽  
Vol 11 (10) ◽  
pp. 2556-2564 ◽  
Author(s):  
Y. L. Tu ◽  
S. J. Milne
Keyword(s):  
Film Thickness ◽  
Relative Permittivity ◽  
Sol Gel ◽  
Dissipation Factor ◽  
Multilayer Coatings ◽  
A Value ◽  
Pzt Film ◽  
Interface Layers ◽  
Low Permittivity

A recently developed diol sol-gel route has been modified in order to produce multilayer PbZr0.53Ti0.47O3 films on platinized sapphire substrates. Up to 20 depositions of a 1.1 M sol were carried out leading to a final film thickness of 10 μm. A similar thickness could be achieved from 12 coatings of a more concentrated 1.6 M sol. Decomposition and crystallization of the multilayer coatings were performed using a two-stage prefiring sequence, at 350 °C and 600 °C, followed by a final firing step at 700 °C. Ferroelectric remanant polarization increased with increasing film thickness to a value of 40 μC cm−2 for a 10 μm film, with a corresponding coercive field of 30 kV cm−1; the relative permittivity of this film was ∼1000 and the dissipation factor 0.04. The thickness dependence of relative permittivity could be modeled on a simple series capacitor circuit representing the ferroelectric Pb(Zr, Ti)O3 (PZT) film and low-permittivity interface layers; but other possible contributory factors are also discussed.

scholarly journals Correlation of film thickness to optical band gap of Sol-gel derived Ba0.9Gd0.1TiO3 thin films for optoelectronic applications

2017 ◽  
Vol 162 ◽  
pp. 01042
Author(s):  
Yen Chin Teh ◽  
Ala’eddin A. Saif ◽  
Zul Azhar Zahid Jamal ◽  
Prabakaran Poopalan
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Band Gap ◽  
Optical Band Gap ◽  
Sol Gel ◽  
Optoelectronic Applications

The Effect of RuO2/Pt Hybrid Bottom Electrode Structure on The Microstructure and Ferroelectric Properties of Sol-Gel Derived PZT Thin Films

1997 ◽  
Vol 493 ◽  
Author(s):  
Seung-Hyun Kim ◽  
J. G. Hong ◽  
J. C. Gunter ◽  
H. Y. Lee ◽  
S. K. Streiffer ◽  
...  
Keyword(s):  
Thin Films ◽  
Leakage Current ◽  
Bottom Electrode ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Chemical Solution ◽  
Electrode Structure ◽  
Solution Deposition ◽  
Pzt Thin Films ◽  
Chemical Solution Deposition Method

ABSTRACTFerroelectric PZT thin films on thin RuO2 (10, 30, 50nm)/Pt hybrid bottom electrodes were successfully prepared by using a modified chemical solution deposition method. It was observed that the use of a lOnm RuO2Pt bottom electrode reduced leakage current, and gave more reliable capacitors with good microstructure compare to the use of thicker RuO2/Pt bottom electrodes. Typical P-E hysteresis behavior was observed even at an applied voltage of 3V, demonstrating greatly improved remanence and coercivity. Fatigue and breakdown characteristics, measured at 5V, showed stable behavior, and only below 13-15% degradation was observed up to 1010 cycles. Thicker RuO2 layers resulted in high leakage current density due to conducting lead ruthenate or PZT pyrochlore-ruthenate and a rosette-type microstructure.

scholarly journals Thickness-dependent electrocaloric effect in mixed-phase Pb 0.87 Ba 0.1 La 0.02 (Zr 0.6 Sn 0.33 Ti 0.07 )O 3 thin films

2016 ◽  
Vol 374 (2074) ◽  
pp. 20160056 ◽  
Author(s):  
T. M. Correia ◽  
Q. Zhang
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Phase Transitions ◽  
Film Thickness ◽  
Tetragonal Phase ◽  
Sol Gel ◽  
Breakdown Field ◽  
Electrocaloric Effect ◽  
Thickness Increase ◽  
Higher Temperature

Full-perovskite Pb 0.87 Ba 0.1 La 0.02 (Zr 0.6 Sn 0.33 Ti 0.07 )O 3 (PBLZST) thin films were fabricated by a sol–gel method. These revealed both rhombohedral and tetragonal phases, as opposed to the full-tetragonal phase previously reported in ceramics. The fractions of tetragonal and rhombohedral phases are found to be strongly dependent on film thickness. The fraction of tetragonal grains increases with increasing film thickness, as the substrate constraint throughout the film decreases with film thickness. The maximum of the dielectric constant ( ε m ) and the corresponding temperature ( T m ) are thickness-dependent and dictated by the fraction of rhombohedral and tetragonal phase, with ε m reaching a minimum at 400 nm and T m shifting to higher temperature with increasing thickness. With the thickness increase, the breakdown field decreases, but field-induced antiferroelectric–ferroelectric ( E AFE−FE ) and ferroelectric–antiferroelectric ( E FE−AFE ) switch fields increase. The electrocaloric effect increases with increasing film thickness. This article is part of the themed issue ‘Taking the temperature of phase transitions in cool materials’.

Electrical Behavior of X-Ray Detector Based on PbI2Crystal With Coplanar Electrode Structure

2016 ◽  
Vol 63 (3) ◽  
pp. 1790-1796 ◽  
Author(s):  
Hui Sun ◽  
Xinghua Zhu ◽  
Dingyu Yang ◽  
Peihua Wangyang ◽  
Haibo Tian ◽  
...  
Keyword(s):  
Electrical Behavior ◽  
Electrode Structure ◽  
X Ray

Fabrication of Thick, Sol Gel Pzt Films: Applications to Macroscopic Piezoelectric Devices

1994 ◽  
Vol 360 ◽  
Author(s):  
D.A. Barrow ◽  
T.E. Petroff ◽  
M. Sayer
Keyword(s):  
Lead Zirconate Titanate ◽  
Sol Gel ◽  
Low Frequency ◽  
Lead Zirconate ◽  
Resonant Vibrations ◽  
Pzt Film ◽  
Sol Gel Process ◽  
Pzt Films ◽  
High Frequency Resonance ◽  
Piezoelectric Devices

AbstractLead zirconate titanate (PZT) films of up to 60 μm in thickness have been fabricated on a wide variety of substrates using a new sol gel process. The dielectric properties (∈ = 900), ferroelectric (Ec = 16 kV/cm and Pr = 35 μC/cm 2) and piezoelectric properties are comparable to bulk values. The characteristic Curie point of these films is at 420 °C. Piezoelectric actuators have been developed by depositing thick PZT films on both planar and coaxial substrates. Stainless steel cantilevers and optical fibres coated with a PZT film exhibit flexure mode resonant vibrations observable with the naked eye. A low frequency in-line fibre optic modulator has been developed using a PZT coated optical fibre. The high frequency resonance of a 60 μm film on a aluminum substrate has been observed.

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