Orientation Selection in Sol-Gel Derived PZT Thin Films

2000 ◽  
Vol 655 ◽  
Author(s):  
G. J. Norga ◽  
Laura Fé
Keyword(s):  
Film Thickness ◽  
Sol Gel ◽  
Electrode System ◽  
Film Properties ◽  
Orientation Selection ◽  
Pzt Film ◽  
Pzt Films ◽  
Basic Studies ◽  
Excessive Oxygen ◽  
Real Temperature

AbstractMotivated by the growing impact of PZT film orientation on ferroelectric film properties as film thickness is scaled down, we present basic studies on orientation selection in sol-gel derived PZT films, using pre-annealed Pt/Ti electrode layers as a model electrode system. FTIR was used to study, on a real temperature scale, chemical reactions in the films during the initial thermal steps prior to crystallization. We found that the chemical structure of the pyrolyzed film has a much larger impact on orientation selection than has previously been realized. In addition to pyrolysis conditions, the ambient used for the crystallization step was found to play a crucial role in orientation selection. As film thickness decreases, excessive oxygen incorporation in the films is seen to result in the loss of the preferential (111) texture when crystallization is performed in air. By performing crystallizations in N2, 40 nm thick PZT films with a strongly preferential (111) orientation could be obtained.

Fabrication of Thick, Sol Gel Pzt Films: Applications to Macroscopic Piezoelectric Devices

1994 ◽  
Vol 360 ◽  
Author(s):  
D.A. Barrow ◽  
T.E. Petroff ◽  
M. Sayer
Keyword(s):  
Lead Zirconate Titanate ◽  
Sol Gel ◽  
Low Frequency ◽  
Lead Zirconate ◽  
Resonant Vibrations ◽  
Pzt Film ◽  
Sol Gel Process ◽  
Pzt Films ◽  
High Frequency Resonance ◽  
Piezoelectric Devices

AbstractLead zirconate titanate (PZT) films of up to 60 μm in thickness have been fabricated on a wide variety of substrates using a new sol gel process. The dielectric properties (∈ = 900), ferroelectric (Ec = 16 kV/cm and Pr = 35 μC/cm 2) and piezoelectric properties are comparable to bulk values. The characteristic Curie point of these films is at 420 °C. Piezoelectric actuators have been developed by depositing thick PZT films on both planar and coaxial substrates. Stainless steel cantilevers and optical fibres coated with a PZT film exhibit flexure mode resonant vibrations observable with the naked eye. A low frequency in-line fibre optic modulator has been developed using a PZT coated optical fibre. The high frequency resonance of a 60 μm film on a aluminum substrate has been observed.

Effect of Sol-Gel PZT Film Thickness on the Hysteresis Properties

2012 ◽  
Vol 439 (1) ◽  
pp. 74-79 ◽  
Author(s):  
Yu. V. Podgorny ◽  
D. S. Seregin ◽  
A. S. Sigov ◽  
K. A. Vorotilov
Keyword(s):  
Film Thickness ◽  
Sol Gel ◽  
Pzt Film ◽  
Hysteresis Properties

Preparation of PbZrxTi1−xO3 Films on Si Substrates Using SrTiO3 Buffer Layers

1994 ◽  
Vol 361 ◽  
Author(s):  
Eisuke Tokumitsu ◽  
Kensuke Itani ◽  
Bum-Ki Moon ◽  
Hiroshi Ishiwara
Keyword(s):  
Buffer Layer ◽  
Secondary Ion Mass Spectrometry ◽  
Sol Gel ◽  
Buffer Layers ◽  
Si Substrates ◽  
Pzt Film ◽  
Pzt Films ◽  
Evaporation Technique ◽  
Gel Technique ◽  
Secondary Ion

ABSTRACTWe report the preparation of PbZrxTi1−xO3 (PZT) films on Si substrates with a SrTiO3 (STO) buffer layer. STO buffer layers and PZT films were formed on Si substrates by the electron-beam assisted vacuum evaporation technique and sol-gel technique, respectively. By evaporating a thin (8nm) metal Sr layer prior to the STO deposition, which deoxidizes the SiO2 layer at the Si surface, (100)- and (111)-oriented STO thin films can be grown on Si(100) and (111) substrates, respectively. It is shown that a strongly (100)-oriented PZT film is grown on STO(100)/Si(100), whereas a strongly (111)-oriented PZT film is obtained on STO(111)/Si(111). It is also found that the STO buffer layer remains intact even after the PZT deposition. Secondary ion mass spectrometry (SIMS) analysis showed that the STO barrier layer was effective in preventing diffusion of Pb into the Si substrate.

Preparation of PZT Ferroelectric Thin Films by Sol-Gel Process

2012 ◽  
Vol 204-208 ◽  
pp. 4207-4210 ◽  
Author(s):  
Yu Fei You ◽  
C. H. Xu ◽  
Jun Peng Wang ◽  
Yu Liang Liu ◽  
Jin Feng Xiao ◽  
...  
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
X Ray Diffraction ◽  
Pzt Ceramics ◽  
X Ray ◽  
Pzt Film ◽  
Sol Gel Process ◽  
Pzt Films ◽  
Pzt Ferroelectric Thin Films ◽  
Electronic Microscope

Sol-gel method is used for the formation of Pb(Zr0.63Ti0.37)O3(PZT) thin films. The initial films were formed with spin coating sol solution on silicon wafer and drying coated wet sol film at 300°C for 5min. This process was repeated for 1-4 times to obtain 4 initial films with different thicknesses. 4 initial films were annealed at 500°C for 2h to obtain PZT ceramics films. The morphologies of the surface and cross-section of PZT films were observed with a scanning electronic microscope (SEM). The phase structures of PZT films were analyzed using an X-ray diffraction meter (XRD). Experimental results show that PZT film prepared by coating wet sol on silicon once can be high smooth and compact film.

scholarly journals Texture Variations in Sol-Gel Derived PZT Films on Substrates with Platinum Metallization

1994 ◽  
Vol 343 ◽  
Author(s):  
J.G.E. Gardeniers ◽  
M. Elwenspoek ◽  
C. Cobianu
Keyword(s):  
Metal Layer ◽  
Sol Gel ◽  
Annealing Treatment ◽  
X Ray Diffraction ◽  
Interface Composition ◽  
Lattice Constants ◽  
Pzt Film ◽  
Pzt Films ◽  
Pt Films ◽  
Surface Morphologies

ABSTRACTMetalorganic precursor solutions of composition Zr : Ti = 0.53 : 0.47 were used to spin-cast PZT layers on sputtered Pt films. After annealing at temperatures of 550 °C - 800 °C, the PZT films of tetragonal perovskite structure reproducibly showed different textures and surface morphologies, depending on whether or not a Ti layer was used as an adhesion layer for the Pt film. The texture differences were found to be independent of annealing treatment. It is argued that the observed texture differences are caused by a change in Pt-PZT interface composition, resulting from the diffusion of Ti into the Pt film during annealing; X-ray diffraction of an annealed Pt/Ti/SiO2/Si film combination provided evidence for a compound Pt3Ti. Annealing at 850 °C caused severe diffusion of Ti from the metal layer into the PZT film, leading to a tetragonal PZT layer with lattice constants corresponding to a Zr : Ti ratio of 30 : 70.

Giant Self-Polarization in FeRAM Element Based on Sol-Gel PZT Films

2015 ◽  
Vol 1729 ◽  
pp. 87-92
Author(s):  
L. A. Delimova ◽  
E. V. Guschina ◽  
V. S. Yuferev ◽  
I. V. Grekhov ◽  
N. V. Zaiceva ◽  
...  
Keyword(s):  
Bottom Electrode ◽  
Lattice Mismatch ◽  
Sol Gel ◽  
Hysteresis Loops ◽  
Polarization Switching ◽  
Driving Voltage ◽  
Lattice Constants ◽  
Modified Method ◽  
Pzt Film ◽  
Pzt Films

ABSTRACTIntegrated ferroelectric capacitors Pt/PZT/Pt/Ti/SiO2/Si with sol-gel deposited PZT films are studied. The (111) textured polycrystalline films are shown to have nonconductive PZT grain boundaries. The short-circuited photocurrents measured under illumination of the films by light with the quantum energy of 2.7 eV indicate the polarization inside the film directed from the top to the bottom electrode. Using the modified method of depolarization hysteresis loops, we found a non-switchable part of polarization which was measured to be -16 μC/cm2 and directed from the top to the bottom electrode. We consider this result to be a giant self-polarization and explain it in terms of flexoelectricity caused by lattice mismatch between the PZT and bottom Pt layers. The strain gradient across the PZT film thickness is estimated from the in-plane lattice constants measured in Pt and PZT films to be ∼103cm-1, which can produce the downward flexoelectric polarization of ∼14 μC/cm2, coinciding well with the measured one. Nonsymmetrical depolarization loops are found in the films when the polarization switching itself becomes more difficult under the negative or positive driving voltage. We show experimentally how depolarization with compensating bias or film illumination can affect the film polarization switching.

Chemical structure evolution and orientation selection in sol-gel-prepared ferroelectric Pb(Zr,Ti)O3 thin films

2001 ◽  
Vol 16 (9) ◽  
pp. 2499-2504 ◽  
Author(s):  
L. Fè ◽  
G. J. Norga ◽  
D. J. Wouters ◽  
H. E. Maes ◽  
G. Maes
Keyword(s):  
Thin Films ◽  
Chemical Structure ◽  
Temperature Scale ◽  
Sol Gel ◽  
Structure Evolution ◽  
Orientation Selection ◽  
Pzt Thin Films ◽  
Pt Electrodes ◽  
Sol Gel Process ◽  
Real Temperature

We studied in detail the chemical structure evolution of Pb(Zr1−x, Tix)O3 (PZT) thin films on Pt electrodes during the initial thermal steps of their preparation using an alkoxide-based sol-gel process. Absorption-reflection Fourier transform infrared spectroscopy (AR-FTIRS) was used to monitor chemical reactions occurring in the films on a real temperature scale. We demonstrate that the chemical state of the pyrolyzed film strongly depends on pyrolysis conditions and can have a large effect on the orientation selection in the film. First, residual acetate groups, resulting from incomplete decomposition of the Pb acetate precursor, strengthen the (111) PZT texture component after crystallization. Second, OH bonds, which are seen to remain in the film after pyrolysis under specific conditions, are seen to strengthen the intensity of the PZT(100) reflection. Possible mechanisms behind these observations are discussed.

Thickness Dependence and Electrical Properties of Ultrathin PZT Films Grown on SrRuO3/SrTiO3 by MOCVD

1999 ◽  
Vol 596 ◽  
Author(s):  
M. Shimizu ◽  
H. Fujisawa ◽  
H. Niu
Keyword(s):  
Film Thickness ◽  
Vapor Deposition ◽  
Applied Voltage ◽  
Metalorganic Chemical Vapor Deposition ◽  
Hysteresis Loops ◽  
Chemical Vapor ◽  
Pzt Film ◽  
Polarization Density ◽  
Pzt Films ◽  
Ferroelectric Hysteresis

AbstractEpitaxial Pb(Zr,Ti)O3 (PZT) thin films with various thicknesses ranging from 40 to 400nm were prepared on SrRuO3/SrTiO3 by metalorganic chemical vapor deposition (MOCVD). The dependence of lattice constant on the film thickness and temperature was examined. The PZT films obtained showed ferroelectric hysteresis loops even when film thickness was 40nm. Applied voltage for obtaining high polarization density decreased as film thickness decreased. The 40nm-thick PZT film had the polarization density (Pr) of 38mC/cm2 at an applied voltage (Vc) of 0.7V.

The Influence of PZT Film Thickness on Microstructure in CSD Processing

2006 ◽  
Vol 45 ◽  
pp. 1268-1274
Author(s):  
A. Etin ◽  
G.E. Shter ◽  
G.S. Grader
Keyword(s):  
State Of The Art ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Precursor Solution ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Pzt Film ◽  
Pzt Films ◽  
Film Microstructure ◽  
Multiple Coating

The R&D of state of the art PZT (PbZrxTi1-xO3) films is important due to their piezoelectric, pyroelectric and ferroelectric properties. Currently, Chemical Solution Deposition (CSD) methods (e.g. spin coating of a sol-gel precursor solution) are successfully used in our lab to deposit PZT films with intermediate thickness. This method employs multiple coating procedures and different microstructure is observed after each coating. We report on the film microstructure evolution studied by quantitative analysis of HRSEM images as a function of thickness.

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