Structural properties of multiferroic CuFeO2 thin films prepared by RF sputtering

Thin films of Er-doped Ta2O5 have been synthesized by RF sputtering. The influence of annealing temperature, number of Er tablets and annealing time on the structural properties of grown films, has been studied. The samples annealed bellow 800°C show amorphous nature. However, the sample annealed at 800°C and above shows crystalline nature of the film with β–Ta2O5 (orthorhombic) and δ–Ta2O5 (hexagonal) phase. The crystalline structure of the film is disturbed with the increase in Er concentration.

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Morphology and structural properties of nano-PZT thin films deposited on unheated substrate by RF sputtering system

2012 24th International Conference on Microelectronics (ICM) ◽

10.1109/icm.2012.6471445 ◽

2012 ◽

Author(s):

Mohammed Mahdi ◽

Mohammed Kadri

Keyword(s):

Thin Films ◽

Structural Properties ◽

Rf Sputtering ◽

Pzt Thin Films ◽

Sputtering System

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Electrical, optical, and structural properties of indium-tin-oxide thin films deposited on polyethylene terephthalate substrates by rf sputtering

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.581133 ◽

1998 ◽

Vol 16 (3) ◽

pp. 1636-1640 ◽

Cited By ~ 30

Author(s):

A. K. Kulkarni ◽

T. Lim ◽

M. Khan ◽

Kirk H. Schulz

Keyword(s):

Thin Films ◽

Structural Properties ◽

Polyethylene Terephthalate ◽

Tin Oxide ◽

Indium Tin Oxide ◽

Rf Sputtering ◽

Oxide Thin Films

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Mechanical and Structural Properties of TiC and TiCN Thin Films Grown by RF Sputtering

MRS Proceedings ◽

10.1557/proc-778-u6.13 ◽

2003 ◽

Vol 778 ◽

Cited By ~ 2

Author(s):

A. Mani ◽

P. Aubert ◽

H. Khodja ◽

P. Houdy

Keyword(s):

Thin Films ◽

Mechanical Properties ◽

Titanium Carbide ◽

Partial Pressure ◽

Compressive Stress ◽

Structural Properties ◽

Rf Sputtering ◽

Maximum Value ◽

Mechanical And Structural Properties ◽

Sputtering Pressure

AbstractTiC and TiCN thin films were deposited by RF sputtering from a TiC target. For TiC thin films, the various sputtering pressure were carried out in order to observe the influence of this parameter on structural and mechanical properties. The experimental results show that a pressure of 1 Pa is necessary to obtain stoichiometric films with <111> texture. Lower pressures induce the formation of distorted titanium carbide, while RBS spectra show that the Ti/C ratio is constant for all these samples. Both the compressive stress and the hardness exhibited a maximum value for the lowest pressures. For TiCN thin films, the composition and the hardness were investigated as function of the N2 partial pressure (PN2 = 3% to 70%).

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