Morphology and structural properties of nano-PZT thin films deposited on unheated substrate by RF sputtering system

Author(s):  
Mohammed Mahdi ◽  
Mohammed Kadri
2013 ◽  
Vol 302 ◽  
pp. 8-13
Author(s):  
Shun Fa Hwang ◽  
Wen Bin Li

PZT thin film was fabricated by using RF-sputtering process, and platinum was used as bottom electrodes. The sputtering gases were Ar:O2=25:0 sccm, Ar:O2=20:5 sccm, or Ar:O2=15:10 sccm. After sputtering, the PZT film was annealed for 5 minutes under O2 gas environment and at the temperature of 600 0C, 650 0C, 700 0C or 750 0C. To judge the quality of the deposited PZT film, its physical properties and electric properties were evaluated. The results indicate that the best crystallization temperature of PZT thin film is about 700 0C. Also, the roughness of the PZT thin film becomes larger with the increasing of annealing temperature. By adding more oxygen in the sputtering gas, one could have better crystallization of the PZT film. As for the electrical properties, the leakage current of PZT thin film increases with the increasing of annealing temperature. Furthermore, the ferroelectric property is affected by the crystallization amount of perovskite, the thickness of PZT thin film, and the diffusion situation between the bottom electrode and the PZT film.


2010 ◽  
Vol 459 ◽  
pp. 32-37 ◽  
Author(s):  
Jaspal Parganram Bange ◽  
Mayank Kumar Singh ◽  
Kazusa Kano ◽  
Kenta Miura ◽  
Osamu Hanaizumi

Thin films of Er-doped Ta2O5 have been synthesized by RF sputtering. The influence of annealing temperature, number of Er tablets and annealing time on the structural properties of grown films, has been studied. The samples annealed bellow 800°C show amorphous nature. However, the sample annealed at 800°C and above shows crystalline nature of the film with β–Ta2O5 (orthorhombic) and δ–Ta2O5 (hexagonal) phase. The crystalline structure of the film is disturbed with the increase in Er concentration.


2017 ◽  
Vol 423 ◽  
pp. 957-960
Author(s):  
Abhishek Rakshit ◽  
Arijit Bose ◽  
Debaleen Biswas ◽  
Madhusudan Roy ◽  
Radhaballabh Bhar ◽  
...  

2021 ◽  
Vol 406 ◽  
pp. 256-264
Author(s):  
Mohammed Mahdi ◽  
M. Kadri

First, the metallic oxides of PbO, TiO2 and ZrO2 were mixed following (2, 1, 1) molar mass respectively. Then 4 samples were separated (S1, S2, S3 and S4). the first one S1 was subjected to calcination treatments at 600, 700 and 800 °C however, the S2 was treated at 700 °C only, the S3 at 800 °C and S4 at 850 °C. The X ray diffraction of the samples reveals important difference in the phases obtained, at 600 °C the quadratic riche phase of PbTiO3 was mainly observed on sample S1, after the treatment at 700 °C and 800°C, the same XRD patterns were obtained with the same peaks positions and the relative intensity. However the S2 revels different pattern from S1 at 700 °C relative to the formation of the Pb(Zr0.75, Ti0.25)O3 Rhombohedral riche phase. The S3 XRD results reveal also different pattern from S1 at 800 °C relative to the formation of Pb (Zr0.58, Ti0.42) O3 near the Morphotropic phase boundary (MPB) and the S4 confirm these finding. Thin films grown from the S1 and S4 used as target in the RF sputtering system, show important difference in the PZT stoichiometry obtained which is relative to Pb (Zr0.44, Ti0.56) located in the quadratic riche phase and Pb (Zr0.52, Ti0.48) O3 near the MPB respectively.


1999 ◽  
Vol 604 ◽  
Author(s):  
S. Kalpat ◽  
X. Du ◽  
I.R. Abothu ◽  
A. Akiba ◽  
H. Goto ◽  
...  

AbstractHighly (100) and (111) oriented lead zirconium titanate (PZT) thin films have been grown by using reactive rf-sputtering. PZT thin films with rhombohedral composition have been grown in different orientations using selective rapid thermal annealing cycles. The polarization versus electric field curves and the resistivity of the films were measured using a standardized RT66A ferroelectric test system. The dielectric constant and the loss were determined using an impedence analyzer. The PZT(100) oriented films showed larger dielectric constant and loss than the PZT(111) films. The PZT(100) films possessed sharper square-like hysteresis loops compared to the PZT(111) films, as expected from our phenomenological calculations.


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