Application of Au-Sn eutectic bonding in hermetic RF MEMS wafer level packaging

Author(s):  
Woonbae Kim ◽  
Qian Wang ◽  
Kyudong Jung ◽  
Junsik Hwang ◽  
Changyoul Moon
Author(s):  
Qian Wang ◽  
Sung Hoon Choa ◽  
Woon Bae Kim ◽  
Jun Sik Hwang ◽  
Suk Jin Ham ◽  
...  

2006 ◽  
Vol 326-328 ◽  
pp. 609-612
Author(s):  
Qian Wang ◽  
Sung Hoon Choa ◽  
Woon Bae Kim ◽  
Jun Sik Hwang ◽  
Suk Jin Ham ◽  
...  

In this paper, a low temperature hermetic wafer level packaging scheme for the RFMEMS devices is presented. For hermetic sealing, Au-Sn multilayer metallization with a square loop of 70 %m in width is performed. The size of the MEMS package is 1mm × 1mm × 700 %m. The shear strength and hermeticity of the package satisfy the requirements of MIL-STD-883F. The total insertion loss for the packaging is 0.075 dB at 2 GHz.


2006 ◽  
Vol 35 (3) ◽  
pp. 425-432 ◽  
Author(s):  
Qian Wang ◽  
Sung-Hoon Choa ◽  
Woonbae Kim ◽  
Junsik Hwang ◽  
Sukjin Ham ◽  
...  

Author(s):  
M. David Henry ◽  
Travis Young ◽  
Andrew E. Hollowell ◽  
Matt Eichenfield ◽  
Roy H. Olsson

2009 ◽  
Vol 60-61 ◽  
pp. 325-329 ◽  
Author(s):  
Jing Wu ◽  
Shi Xing Jia ◽  
Yun Xiang Wang ◽  
Jian Zhu

The study is performed to implement the Gold-Gold thermocompression bonding for the wafer-level packaging of MEMS chips. Numerous experimental attempts have been carried out to select the metal film adhesive to avoid the Au-Si melt together and optimize bonding processes to intensify the Au-Au eutectic bonding. Finally the results display that the eutectic bonding of the gold-gold are arrived as electrical as well as mechanical interconnection of the MEMS structure and as seal as well as bonding intension.


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