A Gate-Controllable High-Voltage SCR Device with High Performance in ESD Protection and Latch-up Immunity

2008 ◽  
Author(s):  
Tuo-Hsin Chien ◽  
Klaus Y.-J. Hsu
Keyword(s):  
High Voltage ◽  
High Performance ◽  
Esd Protection ◽  
Latch Up

Influence of a Deep NBL Structure on ESD/Latch-Up Immunities in the Power Device nLDMOS

2013 ◽  
Vol 732-733 ◽  
pp. 1207-1211
Author(s):  
Shen Li Chen ◽  
Tzung Shian Wu
Keyword(s):  
Power Electronics ◽  
High Voltage ◽  
Power Device ◽  
Esd Protection ◽  
Buried Layer ◽  
Latch Up

In this paper, we propose a novel high-voltage (HV) nLDMOS transistor with a small Ron resistance, low trigger voltage (Vt1) and high holding voltage (Vh) characteristics. Here, we introduce a deep N+-buried-layer (NBL) into this HV nLDMOS to evaluate the ESD/latch-up (LU) parameters variation. These electric snapback parameters affect the reliability of proposed device and its performance. Eventually, we expect this proposed HV stucture processed better characteristic behaviors, which can be applied to the power electronics and ESD protection application of HV ICs.

Design of an intermediate high voltage EM for 3-D studies of biological material and its integration with a system for remote access

1995 ◽  
Vol 53 ◽  
pp. 66-67 ◽  
Author(s):  
Mark H. Ellisman
Keyword(s):  
High Voltage ◽  
High Performance ◽  
Remote Access ◽  
3 Dimensional ◽  
Voltage Electron ◽  
Remote Operation ◽  
High Voltage Electron Microscope ◽  
La Jolla ◽  
Performance Computing ◽  
Advanced Version

The increased availability of High Performance Computing and Communications (HPCC) offers scientists and students the potential for effective remote interactive use of centralized, specialized, and expensive instrumentation and computers. Examples of instruments capable of remote operation that may be usefully controlled from a distance are increasing. Some in current use include telescopes, networks of remote geophysical sensing devices and more recently, the intermediate high voltage electron microscope developed at the San Diego Microscopy and Imaging Resource (SDMIR) in La Jolla. In this presentation the imaging capabilities of a specially designed JEOL 4000EX IVEM will be described. This instrument was developed mainly to facilitate the extraction of 3-dimensional information from thick sections. In addition, progress will be described on a project now underway to develop a more advanced version of the Telemicroscopy software we previously demonstrated as a tool to for providing remote access to this IVEM (Mercurio et al., 1992; Fan et al., 1992).

AC Magnetron Sputtering: An Industrial Approach for High‐Voltage and High‐Performance Thin‐Film Cathodes for Li‐Ion Batteries

2021 ◽  
pp. 2002125
Author(s):  
Jokin Rikarte ◽  
Iñaki Madinabeitia ◽  
Giorgio Baraldi ◽  
Francisco José Fernández‐Carretero ◽  
Víctor Bellido‐González ◽  
...  
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
High Voltage ◽  
High Performance ◽  
Li Ion Batteries ◽  
Li Ion

scholarly journals Computational screening of phosphite derivatives as high-performance additives in high-voltage Li-ion batteries

RSC Advances ◽  
2017 ◽  
Vol 7 (32) ◽  
pp. 20049-20056 ◽  
Author(s):  
Young-Kyu Han ◽  
Jaeik Yoo ◽  
Taeeun Yim
Keyword(s):  
High Voltage ◽  
First Principles ◽  
High Performance ◽  
First Principles Calculations ◽  
Li Ion Batteries ◽  
Computational Screening ◽  
Screening Protocol ◽  
Li Ion ◽  
Performance Additives ◽  
Additive Materials

We presented a computational screening protocol for the efficient development of cathode-electrolyte interphase (CEI)-forming additive materialsviathe first-principles calculations.

scholarly journals Design of a Low on Resistance High Voltage (120V) Novel 3D NLDMOS with Side Isolation Based on 0.35um BCD Process Technology

2018 ◽  
Vol 201 ◽  
pp. 02004
Author(s):  
Shao-Ming Yang ◽  
Gene Sheu ◽  
Tzu Chieh Lee ◽  
Ting Yao Chien ◽  
Chieh Chih Wu ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
High Voltage ◽  
High Performance ◽  
Power Device ◽  
Simulation Tool ◽  
Process Technology ◽  
Surface Field ◽  
Kirk Effect ◽  
Tcad Simulation ◽  
Reduced Surface

High performance power device is necessary for BCD power device. In this paper, we used 3D Synopsis TCAD simulation tool Sentaurus to develop 120V device and successfully simulated. We implemented in a conventional 0.35um BCDMOS process to present of a novel high side 120V LDMOS have reduced surface field (RESURF) and Liner p-top structure with side isolation technology. The device has been research to achieve a benchmark specific on-resistance of 189 mΩ-mm2 while maintaining horizontal breakdown voltage and vertical isolation voltage both to target breakdown voltage of 120V. In ESOA, we also proposed a better performance of both device without kirk effect.

ESD protection for high voltage LDMOS with sense FET

2002 ◽  
Author(s):  
Y.S. Choi ◽  
J.J. Kim ◽  
C.K. Jeon ◽  
M.H. Kim ◽  
S.L. Kim ◽  
...  
Keyword(s):  
High Voltage ◽  
Esd Protection
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