Achieving Low-Cost Linearity Test and Diagnosis of \Sigma \Delta ADCs via Frequency-Domain Nonlinear Analysis and Macromodeling

Author(s):  
Guo Yu ◽  
Peng Li ◽  
Wei Dong
Author(s):  
Chia-Yi Wu ◽  
Haolin Li ◽  
Joris Van Kerrebrouck ◽  
Laurens Breyne ◽  
Laurens Bogaert ◽  
...  

Electronics ◽  
2020 ◽  
Vol 9 (11) ◽  
pp. 1868
Author(s):  
Xiaoye Peng ◽  
Zhiyu Wang ◽  
Jiongjiong Mo ◽  
Chenge Wang ◽  
Jiarui Liu ◽  
...  

Frequency-dependent I/Q imbalance and frequency-independent I/Q imbalance are the major impairments in wideband zero-IF receivers, and they both cannot be ignored. In this paper, a blind calibration model is designed for compensating these I/Q imbalances. In order to accurately estimate the imbalance parameters with low cost, a classification rule is proposed according to the frequency-domain statistical characteristics of the received signal. The calibration points in the frequency-domain are divided into two groups. Then, the amplitude imbalance and the frequency-dependent phase imbalance are derived from the group of signal points and, separately, the frequency-independent phase imbalance is calculated from the group of noise points. In the derivation of the frequency-dependent phase imbalance, a general fitting model suitable for all signal points is proposed, which does not require special calculations for either DC point or fs/2 point. Then, a finite impulse response (FIR) real-valued filter is designed to correct the impairments of received signal. The performances of the proposed calibration model are evaluated through both simulations and experiments. The simulation results show the image rejection ratio (IRR) improvement to around 35–45 dBc at high signal-to-noise ratio (SNR). Based on the mismatched data of the ADRV9009 evaluation board, the experimental results exhibit the IRR improvement of both multi-tone and wideband signals to about 30 dBc.


2019 ◽  
Vol 19 (1) ◽  
pp. 37-45 ◽  
Author(s):  
Renato S. Feitoza ◽  
Manuel J. Barragan ◽  
Daniel Dzahini ◽  
Salvador Mir

Author(s):  
Ma Li Ya ◽  
Sheroz Khan ◽  
Anis Nurashikin Nordin ◽  
Ahm Zahirul Alam ◽  
Jamaludin Omar ◽  
...  

2013 ◽  
Vol 68 (7-8) ◽  
pp. 415-424 ◽  
Author(s):  
Maher Hamdi ◽  
Frédéric Garet ◽  
Lionel Duvillaret ◽  
Philippe Martinez ◽  
Guy Eymin Petot Tourtollet

2014 ◽  
Vol 5 ◽  
pp. 964-972 ◽  
Author(s):  
Tomi Roinila ◽  
Xiao Yu ◽  
Jarmo Verho ◽  
Tie Li ◽  
Pasi Kallio ◽  
...  

Silicon nanowire-based field-effect transistors (SiNW FETs) have demonstrated the ability of ultrasensitive detection of a wide range of biological and chemical targets. The detection is based on the variation of the conductance of a nanowire channel, which is caused by the target substance. This is seen in the voltage–current behavior between the drain and source. Some current, known as leakage current, flows between the gate and drain, and affects the current between the drain and source. Studies have shown that leakage current is frequency dependent. Measurements of such frequency characteristics can provide valuable tools in validating the functionality of the used transistor. The measurements can also be an advantage in developing new detection technologies utilizing SiNW FETs. The frequency-domain responses can be measured by using a commercial sine-sweep-based network analyzer. However, because the analyzer takes a long time, it effectively prevents the development of most practical applications. Another problem with the method is that in order to produce sinusoids the signal generator has to cope with a large number of signal levels. This may become challenging in developing low-cost applications. This paper presents fast, cost-effective frequency-domain methods with which to obtain the responses within seconds. The inverse-repeat binary sequence (IRS) is applied and the admittance spectroscopy between the drain and source is computed through Fourier methods. The methods is verified by experimental measurements from an n-type SiNW FET.


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